Ion bombardment energy control for selective fluorocarbon plasma etching of organosilicate glass

2004 ◽  
Vol 22 (2) ◽  
pp. 826 ◽  
Author(s):  
R. Silapunt ◽  
A. E. Wendt ◽  
K. Kirmse ◽  
L. P. Losey
Keyword(s):  
Plasma Etching ◽  
Ion Bombardment ◽  
Energy Control ◽  
Fluorocarbon Plasma ◽  
Organosilicate Glass ◽  
Bombardment Energy

Plasma Etching of Copper Thin Film over a Dielectric Step and Electromigration Failure Mechanism

2012 ◽  
Vol 1428 ◽  
Author(s):  
Chi-Chou Lin ◽  
Yue Kuo
Keyword(s):  
Plasma Etching ◽  
Ion Bombardment ◽  
Neck Formation ◽  
Cusp Region ◽  
Cu Film ◽  
Local Current ◽  
Plasma Phase ◽  
Sidewall Passivation ◽  
Bombardment Energy ◽  
Phase Chemistry

ABSTRACTProcess and electromigration issues of the copper line over a dielectric step etched with a new plasma-based process have been studied. The N2 and CF4 additive gas effects on the line profile, undercut, and “neck” formation at the cusp area were investigated with respect to changes of the plasma phase chemistry and ion bombardment energy. The sidewall passivation layer hindered the excessive attack of the cusp region. The undercut of the photoresist pattern caused the residue formation. The lifetime of the etched copper was related to the line shape and the film topography, which directly affected the local current density and stress. With the proper control the plasma phase chemistry and ion bombardment energy, the Cu film over a topographic surface can be etched into fine lines with a long electromigration lifetime.

Directional Plasma Etching of Polysilicon in SF6/CFCL3 discharges

1986 ◽  
Vol 68 ◽  
Author(s):  
Michael T. Mocella ◽  
Brian E. Thompson ◽  
Herbert H. Sawin
Keyword(s):  
Parameter Space ◽  
Kinetic Modeling ◽  
Plasma Etching ◽  
Etching Rate ◽  
Optical Emission ◽  
Ion Bombardment ◽  
Plasma Impedance ◽  
Polynomial Models ◽  
Bombardment Energy

AbstractThe directional etching of P-doped polysilicon has been studied as a function of power (0.2 – 0.8 W/cm3), pressure (0.2 – 0.4 torr), and CFC13 (FreonR-11) fraction (1 – 20%) in SF6 discharges.Over this parameter space, experimental measures of the etching rate, directionality, plasma impedance, optical emission, and ion-bombardment energy and flux were made.Through Ar actinometry, the concentrations of F and Cl were estimated.Response Surface Methodolgy was used to fit the measurements to polynomial models which were used in the subsequent kinetic modeling of the process.As the fraction of CFCl3 was increased from 1 to 20%, the F concentration fell by a factor of 3 while the Cl concentration increased by a factor of approximately 20.The mask undercut and etching rate, however changed less than a factor of two with the CFCl.increase.The measured average ionbombardment energies were well correlated using discharge currents.

Analysis of plasma etching resistance for commercial quartz glasses used in semiconductor apparatus in fluorocarbon plasma

2021 ◽  
pp. 125015
Author(s):  
Jae Ho Choi ◽  
JiSob Yoon ◽  
YoonSung Jung ◽  
Kyung Won Min ◽  
Won Bin Im ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Fluorocarbon Plasma ◽  
Quartz Glasses

Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching

2021 ◽  
Author(s):  
Francio Rodrigues ◽  
Luiz Felipe Aguinsky ◽  
Alexander Toifl ◽  
Alexander Scharinger ◽  
Andreas Hossinger ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Surface Reaction ◽  
Fluorocarbon Plasma
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