Directional Plasma Etching of Polysilicon in SF6/CFCL3 discharges

1986 ◽  
Vol 68 ◽  
Author(s):  
Michael T. Mocella ◽  
Brian E. Thompson ◽  
Herbert H. Sawin
Keyword(s):  
Parameter Space ◽  
Kinetic Modeling ◽  
Plasma Etching ◽  
Etching Rate ◽  
Optical Emission ◽  
Ion Bombardment ◽  
Plasma Impedance ◽  
Polynomial Models ◽  
Bombardment Energy

AbstractThe directional etching of P-doped polysilicon has been studied as a function of power (0.2 – 0.8 W/cm3), pressure (0.2 – 0.4 torr), and CFC13 (FreonR-11) fraction (1 – 20%) in SF6 discharges.Over this parameter space, experimental measures of the etching rate, directionality, plasma impedance, optical emission, and ion-bombardment energy and flux were made.Through Ar actinometry, the concentrations of F and Cl were estimated.Response Surface Methodolgy was used to fit the measurements to polynomial models which were used in the subsequent kinetic modeling of the process.As the fraction of CFCl3 was increased from 1 to 20%, the F concentration fell by a factor of 3 while the Cl concentration increased by a factor of approximately 20.The mask undercut and etching rate, however changed less than a factor of two with the CFCl.increase.The measured average ionbombardment energies were well correlated using discharge currents.

Effect of Dual Radio Frequency Bias Power on SiO2 Sputter Etching in Inductively Coupled Plasma

NANO ◽  
2017 ◽  
Vol 12 (02) ◽  
pp. 1750025 ◽  
Author(s):  
Haegyu Jang ◽  
Heeyeop Chae
Keyword(s):  
Radio Frequency ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Ion Bombardment ◽  
Ion Density ◽  
Source Power ◽  
Inductively Coupled ◽  
Bombardment Energy ◽  
The Relationship ◽  
Sputter Etching

Dual radio frequency (RF) powers are widely used with commercial plasma etchers for various nanoscale patterns. However, it is challenging to understand the relationship among the dual RF powers and the etching processes. In this work, the effect of the dual RF bias powers on SiO2 sputter etching was investigated in inductively coupled plasma (ICP). The relationship was studied among 2[Formula: see text]MHz and 27.12[Formula: see text]MHz RF bias powers, a 13.56[Formula: see text]MHz ICP source power, the ion bombardment energy, the ion density and the etching rate. The results show that the ion density of Ar plasma can be controlled in the region of 109–10[Formula: see text] ions/cm3, and DC self-bias can be controlled by controlling the ratio of dual RF bias powers while the ion density is maintained with the operation of source power. This work reveals that the dual RF bias powers expand the process window of the ion density and the ion bombardment energy independently in the ICP plasma source. The sputter etching rate is also modeled using the ion-enhanced etching model, and the model shows good agreement with the etching rate data.

A Study of the Optical Emission from an rf Plasma during Semiconductor Etching

1977 ◽  
Vol 31 (3) ◽  
pp. 201-207 ◽  
Author(s):  
W. R. Harshbarger ◽  
R. A. Porter ◽  
T. A. Miller ◽  
P. Norton
Keyword(s):  
Silicon Nitride ◽  
Plasma Etching ◽  
Spectroscopic Analysis ◽  
Etching Rate ◽  
Plasma Chemistry ◽  
Optical Emission ◽  
Etching Process ◽  
Semiconductor Materials ◽  
Rf Plasma ◽  
Semiconductor Etching

Spectroscopic analysis of optical emission during rf plasma etching of semiconductor materials has been used to gain a better understanding of the plasma chemistry involved in these systems. The emission was studied principally in CF4-O2 gas mixtures, but other gases were observed as well. It is known that the addition of a relatively small percentage of O2 to CF4 yields a much faster etching rate for silicon and silicon nitride. With the addition of 02 to CF4 discharges we have studied emission from atomic O and molecular CO with a large increase in the emission of atomic F. When the plasma is actively etching silicon or silicon nitride, the emission intensities of both F and O atoms are significantly lower. The etching process can be monitored by observing the intensities of these lines. Analysis of the emission features has also been used to determine abnormal conditions which can adversely affect the etching process.

Plasma Etching of Copper Thin Film over a Dielectric Step and Electromigration Failure Mechanism

2012 ◽  
Vol 1428 ◽  
Author(s):  
Chi-Chou Lin ◽  
Yue Kuo
Keyword(s):  
Plasma Etching ◽  
Ion Bombardment ◽  
Neck Formation ◽  
Cusp Region ◽  
Cu Film ◽  
Local Current ◽  
Plasma Phase ◽  
Sidewall Passivation ◽  
Bombardment Energy ◽  
Phase Chemistry

ABSTRACTProcess and electromigration issues of the copper line over a dielectric step etched with a new plasma-based process have been studied. The N2 and CF4 additive gas effects on the line profile, undercut, and “neck” formation at the cusp area were investigated with respect to changes of the plasma phase chemistry and ion bombardment energy. The sidewall passivation layer hindered the excessive attack of the cusp region. The undercut of the photoresist pattern caused the residue formation. The lifetime of the etched copper was related to the line shape and the film topography, which directly affected the local current density and stress. With the proper control the plasma phase chemistry and ion bombardment energy, the Cu film over a topographic surface can be etched into fine lines with a long electromigration lifetime.

Plasma Etching of SiON Films Using Liquefied C7F14 Gas as Perfluorocarbon Alternative

2020 ◽  
Vol 12 (5) ◽  
pp. 641-646
Author(s):  
Jaemin Lee ◽  
Jihun Kim ◽  
Junmyung Lee ◽  
Hyun Woo Lee ◽  
Kwang-Ho Kwon
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Etching Rate ◽  
Film Surface ◽  
Optical Emission ◽  
Mixed Gas ◽  
Force Microscopy ◽  
Physicochemical Changes ◽  
Etching Profile ◽  
Langmuir Probe Measurements

In this study, we evaluated the possibility of replacing existing perfluorocarbon gas with C7F14, which can be recovered in its liquid state from room-temperature air. We performed plasma etching of SiON films using the CF4 + X + O2 mixed gas, where X = CHF3, C4F8, or C7F14, and examined the etching characteristics of the films (e.g., etching rate, etching profile, and selectivity over Si). Using contact angle goniometry, atomic force microscopy, and X-ray photoelectron spectroscopy, we analyzed the physicochemical changes in the etched SiON film surface. Moreover, optical emission spectroscopy and double Langmuir probe measurements were carried out for plasma diagnosis. Compared with the conventional CHF3 and C4F8 mixed plasma, the C7F14 mixed plasma exhibited a more perpendicular etching profile with higher SiON/Si selectivity and a smoother surface.

scholarly journals The Use of Ion Milling for Surface Preparation for EBSD Analysis

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 3970
Author(s):  
Wojciech J. Nowak
Keyword(s):  
Plasma Etching ◽  
Ion Beam ◽  
Metallic Matrix ◽  
Surface Preparation ◽  
Optical Emission ◽  
Alternative Methods ◽  
Ebsd Analysis ◽  
Crystallographic Structure ◽  
Ion Milling ◽  
Electron Backscattered Diffraction

An electron backscattered diffraction (EBSD) method provides information about the crystallographic structure of materials. However, a surface subjected to analysis needs to be well-prepared. This usually requires following a time-consuming procedure of mechanical polishing. The alternative methods of surface preparation for EBSD are performed via electropolishing or focus ion beam (FIB). In the present study, plasma etching using a glow discharge optical emission spectrometer (GD-OES) was applied for surface preparation for EBSD analysis. The obtained results revealed that plasma etching through GD-OES can be successfully used for surface preparation for EBSD analysis. However, it was also found that the plasma etching is sensitive for the alloy microstructure, i.e., the presence of intermetallic phases and precipitates such as carbides possess a different sputtering rate, resulting in non-uniform plasma etching. Preparation of the cross-section of oxidized CM247 revealed a similar problem with non-uniformity of plasma etching. The carbides and oxide scale possess a lower sputtering rate than the metallic matrix, which caused formation of relief. Based on obtained results, possible resolutions to suppress the effect of different sputtering rates are proposed.

scholarly journals Contamination Particle Behavior of Aerosol Deposited Y2O3 and YF3 Coatings under NF3 Plasma

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 310 ◽  
Author(s):  
Je-Boem Song ◽  
Eunmi Choi ◽  
Seong-Geun Oh ◽  
Jin-Tae Kim ◽  
Ju-Young Yun
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Protective Coatings ◽  
Etching Rate ◽  
Physical Damage ◽  
Plasma Damage ◽  
Coating Materials ◽  
Zero Bias ◽  
Aerosol Deposition Method ◽  
Y2o3 Coating

The internal coatings of chambers exposed to plasma over a long period of time are subject to chemical and physical damage. Contamination particles that are produced by plasma damage to coatings are a major contribution to poor process reliability. In this study, we investigated the behavior of contamination particles produced from plasma damage to Y2O3 and YF3 protective coatings, which were applied by an aerosol deposition method. The coating materials were located at the powered electrode, the grounded electrode, and the grounded wall, which were exposed to a NF3 plasma. The mass loss at the powered electrode, which was exposed to the NF3 plasma etching under an applied bias, showed that the YF3 etching rate was higher than that of Y2O3. Conversely, the mass of coating increased at the grounded electrode and the grounded wall, which were exposed to NF3 plasma etching under zero bias. The mass of the Y2O3 coating increased more than that of the YF3 coating. X-ray photoelectron spectroscopy analysis showed that the Y2O3 coating corroded to YOxFy in the NF3 plasma, and YF3 existed as YFx. Light scattering sensor analysis showed that the YF3 coating produced fewer contamination particles than did the Y2O3 coating.

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