Thin Nano- and Microcrystalline CVD Diamond Films for Micro-channel Cooling: Thermal and Elastic Properties

2011 ◽  
Vol 1282 ◽  
Author(s):  
Robbe Salenbien ◽  
Jan Sermeus ◽  
Paulius Pobedinskas ◽  
Christ Glorieux ◽  
Ken Haenen
Keyword(s):  
Vapor Deposition ◽  
Acoustic Waves ◽  
Metal Layer ◽  
Surface Acoustic Waves ◽  
Diamond Films ◽  
Diffraction Method ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Optical Scattering ◽  
Silicon Substrates

ABSTRACTThin nano- to microcrystalline diamond (N/MCD) films were deposited on silicon substrates using plasma enhanced microwave chemical vapor deposition. Selected layers were covered with a thin metal layer of Cr to enhance their optical absorption characteristics for photothermal and photoacoustic experiments. A heterodyne diffraction method was used to investigate the thermoelastic signatures of the N/MCD layers. While the dispersion of surface acoustic waves turned out to be difficult to determine due to high optical scattering from the diamond crystallites, it was found that a diamond film of ~ 2 μm thick is enhancing the thermal diffusion along the surface.

Particle-Assisted Oriented Deposition of Diamond Thin Films

1996 ◽  
Vol 423 ◽  
Author(s):  
Dong-Gu Lee ◽  
Rajiv K. Singh
Keyword(s):  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray ◽  
Diamond Particles ◽  
Film Synthesis ◽  
Diamond Powders ◽  
Hot Filament

AbstractWe have developed a method for <111> oriented diamond film synthesis using micron-sized diamond particles. Different size of diamond powders were electrophoretically seeded on silicon substrates using diamond suspensions in organic solvents (acetone, methanol, and ethanol). Diamond suspension in acetone was found to be the best for obtaining uniform diamond seeding by electrophoresis. The thickness of diamond seeded films was changed by varying the applied voltage to observe the effect on the orientation of diamond particles. Then diamond films were deposited by the hot filament chemical vapor deposition (HFCVD) process. A preferred orientation with <111> direction normal to the substrate was obtained for monolayer coatings. The surface morphology, crystal orientation, and quality of diamond films were investigated using scanning electron microscopy, x-ray diffractometry, and Raman spectroscopy.

A sequential Raman analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition reactor

1997 ◽  
Vol 12 (10) ◽  
pp. 2686-2698 ◽  
Author(s):  
L. Fayette ◽  
B. Marcus ◽  
M. Mermoux ◽  
N. Rosman ◽  
L. Abello ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Sequential Analysis ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Internal Stresses ◽  
Nucleation Density ◽  
Silicon Substrates

A sequential analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition (CVD) reactor has been performed by Raman spectroscopy. The plasma was switched off during measurements, but the substrate heating was maintained to minimize thermoelastic stresses. The detectivity of the present experimental setup has been estimated to be about a few tens of μmg/cm2. From such a technique, one expects to analyze different aspects of diamond growth on a non-diamond substrate. The evolution of the signals arising from the substrate shows that the scratching treatment used to increase the nucleation density induces an amorphization of the silicon surface. This surface is annealed during the first step of deposition. The evolution of the line shape of the spectra indicates that the non-diamond phases are mainly located in the grain boundaries. The variation of the integrated intensity of the Raman signals has been interpreted using a simple absorption model. A special emphasis was given to the evolution of internal stresses during deposition. It was verified that compressive stresses were generated when coalescence of crystals took place.

Highly conductive nitrogen-doped ultrananocrystalline diamond films with enhanced field emission properties: triethylamine as a new nitrogen source

2016 ◽  
Vol 4 (21) ◽  
pp. 4778-4785 ◽  
Author(s):  
Wen Yuan ◽  
Liping Fang ◽  
Zhen Feng ◽  
Zexiang Chen ◽  
Jianwu Wen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Nitrogen Source ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Nitrogen Doped ◽  
Field Emission Properties ◽  
Ultrananocrystalline Diamond

In this study, triethylamine (TEA) dissolved in the methanol was used as a liquid nitrogen source to synthesize nitrogen-doped ultrananocrystalline diamond (N-UNCD) films on silicon substrates via microwave plasma enhanced chemical vapor deposition (MPCVD).

Smooth diamond films grown by hot filament chemical vapor deposition on positively biased silicon substrates

1994 ◽  
Vol 140 (3-4) ◽  
pp. 454-458 ◽  
Author(s):  
C.H. Chao ◽  
G. Popovici ◽  
E.J. Charlson ◽  
E.M. Charlson ◽  
J.M. Meese ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Hot Filament

Phase Transformation of Smooth Diamond Films Grown by hot Filament Chemical Vapor Deposition on Positively Biased Silicon Substrates.

1994 ◽  
Vol 339 ◽  
Author(s):  
G. Popovici ◽  
C. H. Chao ◽  
M. A. Prelas ◽  
E. J. Charlson ◽  
J. M. Meese
Keyword(s):  
Phase Transformation ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Carbon Phase ◽  
Si Substrates ◽  
Hot Filament

ABSTRACTSmooth diamond films have been grown by hot filament chemical vapor deposition under d.c. bias on mirror-polished Si substrates. Films a few micrometers thick were obtained in 30 minutes. Raman spectra showed very broad diamond peaks. X-ray diffraction showed the presence of diamond and also other carbon phase with a line 2.11 Å. With time, the films apparently underwent a phase transformation.

Study of Carbon Films on Silicon Substrates

2005 ◽  
Vol 482 ◽  
pp. 203-206 ◽  
Author(s):  
O. Jašek ◽  
M. Eliáš ◽  
Z. Frgala ◽  
Jiřina Matějková ◽  
Antonín Rek ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Silicon Substrates ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates

Carbon based films on silicon substrates have been studied by high resolution FE SEM equipped by an EDS analyzer. The first type are carbon nanotube (CNT) [1] films prepared on Si/SiO2 substrates with Ni or Fe layers by radiofrequency plasma chemical vapor deposition. Dependence of nanotube films properties on Ni and Fe thickness and deposition conditions have been studied. The second type of films discussed are microcrystalline and nanocrystalline diamond films grown on pre-treated Si substrates by microwave plasma chemical vapor deposition (MPCVD). The pre-treatment was varied and its effect on diamond films was studied.

DIAMOND DEPOSITION ON WC/Co ALLOY WITH A MOLYBDENUM INTERMEDIATE LAYER

2005 ◽  
Vol 12 (04) ◽  
pp. 499-504
Author(s):  
SHA LIU ◽  
ZHI-MING YU ◽  
DAN-QING YI
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Diamond Coatings ◽  
Sputter Deposited ◽  
Diamond Grain

It is known that in the condition of chemical vapor deposition (CVD) diamond process, molybdenum is capable of forming carbide known as the "glue" which promotes growth of the CVD diamond, and aids its adhesion by (partial) relief of stresses at the interface. Furthermore, the WC grains are reaction bonded to the Mo 2 C phase. Therefore, molybdenum is a good candidate material for the intermediate layer between WC–Co substrates and diamond coatings. A molybdenum intermediate layer of 1–3 μm thickness was magnetron sputter-deposited on WC/Co alloy prior to the deposition of diamond coatings. Diamond films were deposited by hot filament chemical vapor deposition (HFCVD). The chemical quality, morphology, and crystal structure of the molybdenum intermediate layer and the diamond coatings were characterized by means of SEM, EDX, XRD and Raman spectroscopy. It was found that the continuous Mo intermediate layer emerged in spherical shapes and had grain sizes of 0.5–1.5 μm after 30 min sputter deposition. The diamond grain growth rate was slightly slower as compared with that of uncoated Mo layer on the WC–Co substrate. The morphologies of the diamond films on the WC–Co substrate varied with the amount of Mo and Co on the substrate. The Mo intermediate layer was effective to act as a buffer layer for both Co diffusion and diamond growth.

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