Chemical vapor deposition of diamond films on hydrofluoric acid etched silicon substrates

1997 ◽  
Vol 15 (5) ◽  
pp. 2743-2749 ◽  
Author(s):  
S. Schelz ◽  
C. F. M. Borges ◽  
L. Martinu ◽  
M. Moisan
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hydrofluoric Acid ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Etched Silicon

A sequential Raman analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition reactor

1997 ◽  
Vol 12 (10) ◽  
pp. 2686-2698 ◽  
Author(s):  
L. Fayette ◽  
B. Marcus ◽  
M. Mermoux ◽  
N. Rosman ◽  
L. Abello ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Sequential Analysis ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Internal Stresses ◽  
Nucleation Density ◽  
Silicon Substrates

A sequential analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition (CVD) reactor has been performed by Raman spectroscopy. The plasma was switched off during measurements, but the substrate heating was maintained to minimize thermoelastic stresses. The detectivity of the present experimental setup has been estimated to be about a few tens of μmg/cm2. From such a technique, one expects to analyze different aspects of diamond growth on a non-diamond substrate. The evolution of the signals arising from the substrate shows that the scratching treatment used to increase the nucleation density induces an amorphization of the silicon surface. This surface is annealed during the first step of deposition. The evolution of the line shape of the spectra indicates that the non-diamond phases are mainly located in the grain boundaries. The variation of the integrated intensity of the Raman signals has been interpreted using a simple absorption model. A special emphasis was given to the evolution of internal stresses during deposition. It was verified that compressive stresses were generated when coalescence of crystals took place.

Highly conductive nitrogen-doped ultrananocrystalline diamond films with enhanced field emission properties: triethylamine as a new nitrogen source

2016 ◽  
Vol 4 (21) ◽  
pp. 4778-4785 ◽  
Author(s):  
Wen Yuan ◽  
Liping Fang ◽  
Zhen Feng ◽  
Zexiang Chen ◽  
Jianwu Wen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Nitrogen Source ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Nitrogen Doped ◽  
Field Emission Properties ◽  
Ultrananocrystalline Diamond

In this study, triethylamine (TEA) dissolved in the methanol was used as a liquid nitrogen source to synthesize nitrogen-doped ultrananocrystalline diamond (N-UNCD) films on silicon substrates via microwave plasma enhanced chemical vapor deposition (MPCVD).

Smooth diamond films grown by hot filament chemical vapor deposition on positively biased silicon substrates

1994 ◽  
Vol 140 (3-4) ◽  
pp. 454-458 ◽  
Author(s):  
C.H. Chao ◽  
G. Popovici ◽  
E.J. Charlson ◽  
E.M. Charlson ◽  
J.M. Meese ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Hot Filament

Phase Transformation of Smooth Diamond Films Grown by hot Filament Chemical Vapor Deposition on Positively Biased Silicon Substrates.

1994 ◽  
Vol 339 ◽  
Author(s):  
G. Popovici ◽  
C. H. Chao ◽  
M. A. Prelas ◽  
E. J. Charlson ◽  
J. M. Meese
Keyword(s):  
Phase Transformation ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Carbon Phase ◽  
Si Substrates ◽  
Hot Filament

ABSTRACTSmooth diamond films have been grown by hot filament chemical vapor deposition under d.c. bias on mirror-polished Si substrates. Films a few micrometers thick were obtained in 30 minutes. Raman spectra showed very broad diamond peaks. X-ray diffraction showed the presence of diamond and also other carbon phase with a line 2.11 Å. With time, the films apparently underwent a phase transformation.

Study of Carbon Films on Silicon Substrates

2005 ◽  
Vol 482 ◽  
pp. 203-206 ◽  
Author(s):  
O. Jašek ◽  
M. Eliáš ◽  
Z. Frgala ◽  
Jiřina Matějková ◽  
Antonín Rek ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Silicon Substrates ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates

Carbon based films on silicon substrates have been studied by high resolution FE SEM equipped by an EDS analyzer. The first type are carbon nanotube (CNT) [1] films prepared on Si/SiO2 substrates with Ni or Fe layers by radiofrequency plasma chemical vapor deposition. Dependence of nanotube films properties on Ni and Fe thickness and deposition conditions have been studied. The second type of films discussed are microcrystalline and nanocrystalline diamond films grown on pre-treated Si substrates by microwave plasma chemical vapor deposition (MPCVD). The pre-treatment was varied and its effect on diamond films was studied.

CRITICAL EXPONENT MEASUREMENT OF POOR QUALITY DIAMOND FILMS

2002 ◽  
Vol 09 (03n04) ◽  
pp. 1409-1412 ◽  
Author(s):  
M. C. SALVADORI ◽  
L. L. MELO ◽  
D. R. MARTINS ◽  
A. R. VAZ ◽  
M. CATTANI
Keyword(s):  
Chemical Vapor Deposition ◽  
Critical Exponents ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Poor Quality ◽  
Silicon Substrates ◽  
Atomic Force ◽  
Theoretical Predictions

We have synthesized poor quality diamond films, using high methane concentretion, by plasma-assisted chemical vapor deposition on silicon substrates. The roughness and dynamic critical exponents, α and β, of these films have been measured using an atomic force microscope. We show that the morphology, the roughness and the critical exponents of the diamond films are significantly different from those obtained with a low methane concentration. Our results are compared with Kardar–Parisi–Zhang theoretical predictions.

Smooth diamond films grown by hot filament chemical vapor deposition on positively biased silicon substrates

1995 ◽  
Vol 10 (8) ◽  
pp. 2011-2016 ◽  
Author(s):  
Galina Popovici ◽  
C.H. Chao ◽  
M.A. Prelas ◽  
E.J. Charlson ◽  
J.M. Meese
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Structural Changes ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Initial Structure ◽  
Si Substrates ◽  
Diffraction Patterns ◽  
Hot Filament

Diamond films have been grown by hot filament chemical vapor deposition (CVD) on mirror-polished positively biased Si substrates. Very smooth films a few micrometers thick were obtained in only 30 min. SEM, x-ray diffraction patterns, and Raman were used to characterize the films. Not only diamond but other carbon phases, were also detected. The initial structure showed a high density of defects and large stresses. Structural changes in time were found to occur with films apparently undergoing a phase transformation.

Sign in / Sign up

Export Citation Format

Share Document