Highly conductive nitrogen-doped ultrananocrystalline diamond films with enhanced field emission properties: triethylamine as a new nitrogen source

2016 ◽  
Vol 4 (21) ◽  
pp. 4778-4785 ◽  
Author(s):  
Wen Yuan ◽  
Liping Fang ◽  
Zhen Feng ◽  
Zexiang Chen ◽  
Jianwu Wen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Nitrogen Source ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Nitrogen Doped ◽  
Field Emission Properties ◽  
Ultrananocrystalline Diamond

In this study, triethylamine (TEA) dissolved in the methanol was used as a liquid nitrogen source to synthesize nitrogen-doped ultrananocrystalline diamond (N-UNCD) films on silicon substrates via microwave plasma enhanced chemical vapor deposition (MPCVD).

Aligned Carbon Nanotubes Via Microwave Plasma Enhanced Chemical Vapor Deposition

1999 ◽  
Vol 593 ◽  
Author(s):  
H. Cui ◽  
D. Palmer ◽  
O. Zhou ◽  
B. R. Stoner
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Multi Wall Carbon Nanotubes ◽  
Field Emission Properties ◽  
Transmission Electron

ABSTRACTAligned multi-wall carbon nanotubes have been grown on silicon substrates by microwave plasma enhanced chemical vapor deposition using methane/ammonia mixtures. The concentration ratio of methane/ammonia in addition to substrate temperature was varied. The morphology, structure and alignment of carbon nanotubes were studied by scanning electron microscopy and transmission electron microscopy. Both concentric hollow and bamboo-type multi-wall carbon nanotubes were observed. Growth rate, size distribution, alignment, morphology, and structure of carbon nanotubes changed with methane/ammonia ratio and growth temperature. Preliminary results on field emission properties are also presented.

A sequential Raman analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition reactor

1997 ◽  
Vol 12 (10) ◽  
pp. 2686-2698 ◽  
Author(s):  
L. Fayette ◽  
B. Marcus ◽  
M. Mermoux ◽  
N. Rosman ◽  
L. Abello ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Sequential Analysis ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Internal Stresses ◽  
Nucleation Density ◽  
Silicon Substrates

A sequential analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition (CVD) reactor has been performed by Raman spectroscopy. The plasma was switched off during measurements, but the substrate heating was maintained to minimize thermoelastic stresses. The detectivity of the present experimental setup has been estimated to be about a few tens of μmg/cm2. From such a technique, one expects to analyze different aspects of diamond growth on a non-diamond substrate. The evolution of the signals arising from the substrate shows that the scratching treatment used to increase the nucleation density induces an amorphization of the silicon surface. This surface is annealed during the first step of deposition. The evolution of the line shape of the spectra indicates that the non-diamond phases are mainly located in the grain boundaries. The variation of the integrated intensity of the Raman signals has been interpreted using a simple absorption model. A special emphasis was given to the evolution of internal stresses during deposition. It was verified that compressive stresses were generated when coalescence of crystals took place.

Study of Carbon Films on Silicon Substrates

2005 ◽  
Vol 482 ◽  
pp. 203-206 ◽  
Author(s):  
O. Jašek ◽  
M. Eliáš ◽  
Z. Frgala ◽  
Jiřina Matějková ◽  
Antonín Rek ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Silicon Substrates ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates

Carbon based films on silicon substrates have been studied by high resolution FE SEM equipped by an EDS analyzer. The first type are carbon nanotube (CNT) [1] films prepared on Si/SiO2 substrates with Ni or Fe layers by radiofrequency plasma chemical vapor deposition. Dependence of nanotube films properties on Ni and Fe thickness and deposition conditions have been studied. The second type of films discussed are microcrystalline and nanocrystalline diamond films grown on pre-treated Si substrates by microwave plasma chemical vapor deposition (MPCVD). The pre-treatment was varied and its effect on diamond films was studied.

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