Organic/Inorganic Hybrid-Type Nonvolatile Memory Thin-Film Transistor on Plastic Substrate below 150°C

2011 ◽  
Vol 1287 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shinhyuk Yang ◽  
Soon-Won Jung ◽  
Sang-Hee Ko Park ◽  
Chun-Won Byun ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Nonvolatile Memory ◽  
Vinylidene Fluoride ◽  
Thin Film Transistor ◽  
Memory Device ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Plastic Substrate ◽  
Inorganic Hybrid ◽  
Hybrid Type

ABSTRACTAn organic/inorganic hybrid-type nonvolatile memory TFT was proposed as a core device for the future flexible electronics. The structural feature of this memory TFT was that a ferroelectric copolymer and an oxide semiconductor layers were employed as a gate insulator and an active channel, respectively. The memory TFT with the structure of Au/poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO/Ti/Au/Ti/poly(ethylene naphthalate) could be successfully fabricated at the process temperature of below 150°C. It was confirmed that the TFT well operated as a memory device even under the bending situations.

Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor

2011 ◽  
Vol 58 (7) ◽  
pp. 2135-2142 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shinhyuk Yang ◽  
Min-Ki Ryu ◽  
Chun-Won Byun ◽  
Soon-Won Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Nonvolatile Memory ◽  
Thin Film Transistor ◽  
Oxide Semiconductor ◽  
Inorganic Hybrid ◽  
Dual Gate

Fabrication of Stretchable Organic–Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures

2015 ◽  
Vol 15 (10) ◽  
pp. 7526-7530 ◽  
Author(s):  
Soon-Won Jung ◽  
Jae Bon Koo ◽  
Chan Woo Park ◽  
Bock Soon Na ◽  
Ji-Young Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Vinylidene Fluoride ◽  
Channel Structure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid ◽  
Poly Vinylidene Fluoride

In this study, stretchable organic–inorganic hybrid thin-film transistors (TFTs) are fabricated on a polyimide (PI) stiff-island/elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and oxide semiconductor In-Ga-Zn-O as the gate dielectric and semiconducting layer, respectively. Carrier mobility, Ion/Ioff ratio, and subthreshold swing (SS) values of 6.1 cm2 V−1 s−1, 107, and 0.2 V/decade, respectively, were achieved. For the hybrid TFTs, the endurable maximum strain without degradation of electrical properties was approximately 49%. These results correspond to those obtained in the first study on fabrication of stretchable hybrid-type TFTs on elastomer substrate using an organic gate insulator and oxide semiconducting active channel structure, thus indicating the feasibility of a promising device for stretchable electronic systems.

Amorphous IGZO Nonvolatile Memory Thin Film Transistors Using Ta2O5 Gate Dielectric

2012 ◽  
Vol 486 ◽  
pp. 233-238 ◽  
Author(s):  
C.J. Chiu ◽  
S.P. Chang ◽  
W.Y. Weng ◽  
S.J. Chang
Keyword(s):  
Thin Film ◽  
Nonvolatile Memory ◽  
High Performance ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Indium Gallium Zinc Oxide ◽  
Nonvolatile Memory Devices ◽  
High Dielectric

A nonvolatile memory thin-film transistor (MTFT) using an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel and a Ta2O5 gate insulator is proposed. The high-dielectric-constant material Ta2O5 was deposited by e-beaming and used for the charge storage layer, i.e., a metal-oxide-semiconductor (MOS) capacitor. We obtained memory windows (ΔVth = 2 V) at 3-V gate voltage and realized reliable memory operations. Therefore, a-IGZO TFT with Ta2O5 can be employed in integrated high-performance nonvolatile memory devices for applications to transparent displays and flexible electronic devices.

Multi-Bit Quantum Dot Nonvolatile Memory (QDNVM) Using Cladded Germanium and Silicon Quantum Dots

2015 ◽  
Vol 24 (03n04) ◽  
pp. 1550003 ◽  
Author(s):  
Murali Lingalugari ◽  
Pik-Yiu Chan ◽  
Evan Heller ◽  
Faquir Jain
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Nonvolatile Memory ◽  
Complementary Metal Oxide Semiconductor ◽  
Memory Device ◽  
Floating Gate ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Device Structure ◽  
Nonvolatile Memory Device

In this paper, we are experimentally demonstrating the multi-bit storage of a nonvolatile memory device with cladded quantum dots as the floating gate. These quantum dot nonvolatile memory (QDNVM) devices were fabricated by using standard complementary metal-oxide-semiconductor (CMOS) process. The quantum dots in the floating gate region assembled using site-specific selfassembly (SSA) technique. Quantum mechanical simulations of this device structure are also presented. The experimental results show that the voltage separation between the bits was 0.15V and the voltage pulses required to write these bits were 11.7V and 30V. These devices demonstrated the larger write voltage separation between the bits.

Solution-processed organic-inorganic hybrid gate insulator for complementary thin film transistor logic circuits

2019 ◽  
Vol 673 ◽  
pp. 14-18 ◽  
Author(s):  
Hyeong Jun Cho ◽  
Dong-Hoon Lee ◽  
Eung-Kyu Park ◽  
Min Su Kim ◽  
So Young Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Logic Circuits ◽  
Gate Insulator ◽  
Solution Processed ◽  
Inorganic Hybrid
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