Nonvolatile Memory Thin-Film Transistors Using Biodegradable Chicken Albumen Gate Insulator and Oxide Semiconductor Channel on Eco-Friendly Paper Substrate

2015 ◽  
Vol 7 (8) ◽  
pp. 4869-4874 ◽  
Author(s):  
So-Jung Kim ◽  
Da-Bin Jeon ◽  
Jung-Ho Park ◽  
Min-Ki Ryu ◽  
Jong-Heon Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Paper Substrate

¡°See-Through¡± Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel

2011 ◽  
Vol 58 (5(2)) ◽  
pp. 1494-1499 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shinhyuk Yang ◽  
Chun-Won Byun ◽  
Soon-Won Jung ◽  
Sang-Hee Ko Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Gate Insulator ◽  
Oxide Semiconductor

Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

2010 ◽  
Vol 13 (5) ◽  
pp. H141 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shin-Hyuk Yang ◽  
Soon-Won Jung ◽  
Chun-Won Byun ◽  
Sang-Hee Ko Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Gate Insulator ◽  
Solution Processed ◽  
Zinc Indium Oxide

Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

2011 ◽  
Vol 26 (3) ◽  
pp. 034007 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shinhyuk Yang ◽  
Chun-Won Byun ◽  
Soon-Won Jung ◽  
Min-Ki Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Gate Insulator

(Invited) Brain-like Synapse Thin-Film Transistors Using Oxide Semiconductor Channel and Solid Electrolytic Gate Insulator

2017 ◽  
Vol 79 (1) ◽  
pp. 183-188
Author(s):  
Sung-Min Yoon ◽  
Eom-Ji Kim ◽  
Yeo-Myeong Kim ◽  
Ji Young Oh
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Oxide Semiconductor

Fabrication of Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation

2005 ◽  
Vol 902 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Masaru Senoo ◽  
Etsu Shin
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Quartz Substrate ◽  
Drain Current ◽  
Optical Transmittance ◽  
Gate Insulator ◽  
Current Drain

AbstractWe demonstrate transparent thin film transistors (TFTs) with nonvolatile memory operation using Bi4-xLaxTi3O12 (BLT) as a gate insulator and indium tin oxide (ITO) as a channel. ITO is also used for the gate, source and drain electrodes. Drain current-drain voltage (ID-VD) characteristics of transparent ITO/BLT ferroelectric-gate TFTs exhibit excellent n-channel transistor operations. On current of 0.35 mA was obtained when the applied gate voltage is 6V. On the other hand, the off current of the device is as low as 10-10A, which indicates that the ITO channel is sufficiently depleted by the ferroelectric polarization. In addition, drain current-gate voltage (ID-VG) characteristics demonstrate clear counterclockwise hysteresis loop due to the ferroelectric gate insulator. Optical transmittance of the fabricated device is greater than 60% including the quartz substrate.

Growth of High Quality Fluorinated Silicon Dioxide for Thin Film Transistors

2002 ◽  
Vol 715 ◽  
Author(s):  
Roger Keen ◽  
Vikram L. Dalal
Keyword(s):  
Thin Film ◽  
Silicon Dioxide ◽  
Thin Film Transistors ◽  
Defect Density ◽  
Low Pressure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Oxide Interface ◽  
High Quality ◽  
Interface Defect

AbstractThin film transistors(TFT) in microcrystalline and amorphous Si require high quality gate insulators that can be grown at low temperatures. In this paper, we show that one can oxidize Si wafers to produce high quality fluorinated silicon dioxide gate insulator using a low pressure remote plasma. The insulating film was grown on c-Si substrates using a low pressure ECR oxygen plasma, with small quantities of fluorine added to the mixture. Helium was used as the carrier gas for both oxygen and fluorine. The growth temperatures were in the range of 400–450 C. MOS type capacitors were made to judge the quality of the oxide/semiconductor interface, and interface defect densities were measured using capacitance-voltage techniques. It was found that when no fluorine was present in the oxide, the interface defect density was ∼1-2 x 1011/cm2 eV. The addition of F2 to oxygen immediately reduced the defect density by an order of magnitude, to ∼1.5 x 1010/cm2eV. The addition of more F2 slowly increased the defect density. Thermal cycling measurements showed that the semiconductor/oxide interface is very stable under cycling.

scholarly journals Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27699-27706 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Dongjin Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Gate Insulator ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Insulator Interface ◽  
Ag Nanowires ◽  
Nonvolatile Memory Devices

Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

Fabrication of Stretchable Organic–Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures

2015 ◽  
Vol 15 (10) ◽  
pp. 7526-7530 ◽  
Author(s):  
Soon-Won Jung ◽  
Jae Bon Koo ◽  
Chan Woo Park ◽  
Bock Soon Na ◽  
Ji-Young Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Vinylidene Fluoride ◽  
Channel Structure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid ◽  
Poly Vinylidene Fluoride

In this study, stretchable organic–inorganic hybrid thin-film transistors (TFTs) are fabricated on a polyimide (PI) stiff-island/elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and oxide semiconductor In-Ga-Zn-O as the gate dielectric and semiconducting layer, respectively. Carrier mobility, Ion/Ioff ratio, and subthreshold swing (SS) values of 6.1 cm2 V−1 s−1, 107, and 0.2 V/decade, respectively, were achieved. For the hybrid TFTs, the endurable maximum strain without degradation of electrical properties was approximately 49%. These results correspond to those obtained in the first study on fabrication of stretchable hybrid-type TFTs on elastomer substrate using an organic gate insulator and oxide semiconducting active channel structure, thus indicating the feasibility of a promising device for stretchable electronic systems.

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