Comparative electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer based nonvolatile memory device architectures

2008 ◽  
Vol 93 (18) ◽  
pp. 182902 ◽  
Author(s):  
Chang Woo Choi ◽  
Arun Anand Prabu ◽  
Yu Min Kim ◽  
Sun Yoon ◽  
Kap Jin Kim ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Vinylidene Fluoride ◽  
Memory Device ◽  
Nonvolatile Memory Device ◽  
Poly Vinylidene Fluoride

Flexible Nanoporous WO3–x Nonvolatile Memory Device

ACS Nano ◽  
2016 ◽  
Vol 10 (8) ◽  
pp. 7598-7603 ◽  
Author(s):  
Yongsung Ji ◽  
Yang Yang ◽  
Seoung-Ki Lee ◽  
Gedeng Ruan ◽  
Tae-Wook Kim ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Device ◽  
Nonvolatile Memory Device

Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer

2008 ◽  
Vol 29 (3) ◽  
pp. 265-268 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Chu-Yung Liu ◽  
Tien-Ko Wang ◽  
P. J. Tzeng ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Al Doping ◽  
Nonvolatile Memory Device

Organic/Inorganic Hybrid-Type Nonvolatile Memory Thin-Film Transistor on Plastic Substrate below 150°C

2011 ◽  
Vol 1287 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shinhyuk Yang ◽  
Soon-Won Jung ◽  
Sang-Hee Ko Park ◽  
Chun-Won Byun ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Nonvolatile Memory ◽  
Vinylidene Fluoride ◽  
Thin Film Transistor ◽  
Memory Device ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Plastic Substrate ◽  
Inorganic Hybrid ◽  
Hybrid Type

ABSTRACTAn organic/inorganic hybrid-type nonvolatile memory TFT was proposed as a core device for the future flexible electronics. The structural feature of this memory TFT was that a ferroelectric copolymer and an oxide semiconductor layers were employed as a gate insulator and an active channel, respectively. The memory TFT with the structure of Au/poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO/Ti/Au/Ti/poly(ethylene naphthalate) could be successfully fabricated at the process temperature of below 150°C. It was confirmed that the TFT well operated as a memory device even under the bending situations.

Structural and Electrical Characterization of a Block Copolymer-Based Unipolar Nonvolatile Memory Device

2011 ◽  
Vol 24 (3) ◽  
pp. 385-390 ◽  
Author(s):  
Nam-Goo Kang ◽  
Byungjin Cho ◽  
Beom-Goo Kang ◽  
Sunghoon Song ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Nonvolatile Memory ◽  
Electrical Characterization ◽  
Memory Device ◽  
Nonvolatile Memory Device
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