scholarly journals Matrix-Dependent Strain Distributions of Au and Ag Nanoparticles in a Metal-Oxide-Semiconductor-Based Nonvolatile Memory Device

10.5772/61395 ◽  
2015 ◽  
Vol 5 ◽  
pp. 27 ◽  
Author(s):  
Honghua Huang ◽  
Ying Zhang ◽  
Wenyan Wei ◽  
Ting Yu ◽  
Xingfang Luo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Ag Nanoparticles ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Nonvolatile Memory Device ◽  
Dependent Strain

Charge retention in metal–oxide–semiconductor capacitors on SiC used as nonvolatile-memory elements

2002 ◽  
Vol 80 (18) ◽  
pp. 3421-3423 ◽  
Author(s):  
Sima Dimitrijev ◽  
Kuan Yew Cheong ◽  
Jisheng Han ◽  
H. Barry Harrison
Keyword(s):  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Retention

GaAs metal-oxide-semiconductor based nonvolatile memory devices embedded with ZnO quantum dots

2013 ◽  
Vol 114 (8) ◽  
pp. 084509 ◽  
Author(s):  
Souvik Kundu ◽  
Sankara Rao Gollu ◽  
Ramakant Sharma ◽  
Nripendra. N Halder ◽  
Pranab Biswas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Zno Quantum Dots

Multi-Bit Quantum Dot Nonvolatile Memory (QDNVM) Using Cladded Germanium and Silicon Quantum Dots

2015 ◽  
Vol 24 (03n04) ◽  
pp. 1550003 ◽  
Author(s):  
Murali Lingalugari ◽  
Pik-Yiu Chan ◽  
Evan Heller ◽  
Faquir Jain
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Nonvolatile Memory ◽  
Complementary Metal Oxide Semiconductor ◽  
Memory Device ◽  
Floating Gate ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Device Structure ◽  
Nonvolatile Memory Device

In this paper, we are experimentally demonstrating the multi-bit storage of a nonvolatile memory device with cladded quantum dots as the floating gate. These quantum dot nonvolatile memory (QDNVM) devices were fabricated by using standard complementary metal-oxide-semiconductor (CMOS) process. The quantum dots in the floating gate region assembled using site-specific selfassembly (SSA) technique. Quantum mechanical simulations of this device structure are also presented. The experimental results show that the voltage separation between the bits was 0.15V and the voltage pulses required to write these bits were 11.7V and 30V. These devices demonstrated the larger write voltage separation between the bits.

INVESTIGATION OF ZrxLa1-xOy NANOCRYSTALLITES IN METAL–HIGH-k OXIDE–SILICON-TYPE NONVOLATILE MEMORY DEVICES

2012 ◽  
Vol 26 (31) ◽  
pp. 1250191 ◽  
Author(s):  
ALI BAHARI ◽  
REZA GHOLIPUR
Keyword(s):  
Electron Microscopy ◽  
Metal Oxide ◽  
Current Density ◽  
Nonvolatile Memory ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Dip Coating ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Nonvolatile Memory Devices

To investigate characterization of Zr x La 1-x O y nanocrystallites as a buffer oxide in forming the metal-oxide-semiconductor field effect transistors (MOSFETs) structure, we synthesized Zr x La 1-x O y nanocrystallites by sol–gel method. Moreover, from the solution prepared, thin films on silicon wafer substrates have been realized by "dip-coating" with a pulling out speed of 5 cm min -1. The structure, morphology, electrical properties of thin film was examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM) techniques. Electrical property characterization was performed with metal-oxide-semiconductor (MOS) structures through capacitance–voltage (C–V) and current density–voltage (J–V) measurements. The leakage current density was below 1.0 ×10-6 A/cm 2 at 1 MV/cm.

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