Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor

2011 ◽  
Vol 58 (7) ◽  
pp. 2135-2142 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shinhyuk Yang ◽  
Min-Ki Ryu ◽  
Chun-Won Byun ◽  
Soon-Won Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Nonvolatile Memory ◽  
Thin Film Transistor ◽  
Oxide Semiconductor ◽  
Inorganic Hybrid ◽  
Dual Gate

Organic/Inorganic Hybrid-Type Nonvolatile Memory Thin-Film Transistor on Plastic Substrate below 150°C

2011 ◽  
Vol 1287 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shinhyuk Yang ◽  
Soon-Won Jung ◽  
Sang-Hee Ko Park ◽  
Chun-Won Byun ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Nonvolatile Memory ◽  
Vinylidene Fluoride ◽  
Thin Film Transistor ◽  
Memory Device ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Plastic Substrate ◽  
Inorganic Hybrid ◽  
Hybrid Type

ABSTRACTAn organic/inorganic hybrid-type nonvolatile memory TFT was proposed as a core device for the future flexible electronics. The structural feature of this memory TFT was that a ferroelectric copolymer and an oxide semiconductor layers were employed as a gate insulator and an active channel, respectively. The memory TFT with the structure of Au/poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO/Ti/Au/Ti/poly(ethylene naphthalate) could be successfully fabricated at the process temperature of below 150°C. It was confirmed that the TFT well operated as a memory device even under the bending situations.

Amorphous IGZO Nonvolatile Memory Thin Film Transistors Using Ta2O5 Gate Dielectric

2012 ◽  
Vol 486 ◽  
pp. 233-238 ◽  
Author(s):  
C.J. Chiu ◽  
S.P. Chang ◽  
W.Y. Weng ◽  
S.J. Chang
Keyword(s):  
Thin Film ◽  
Nonvolatile Memory ◽  
High Performance ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Indium Gallium Zinc Oxide ◽  
Nonvolatile Memory Devices ◽  
High Dielectric

A nonvolatile memory thin-film transistor (MTFT) using an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel and a Ta2O5 gate insulator is proposed. The high-dielectric-constant material Ta2O5 was deposited by e-beaming and used for the charge storage layer, i.e., a metal-oxide-semiconductor (MOS) capacitor. We obtained memory windows (ΔVth = 2 V) at 3-V gate voltage and realized reliable memory operations. Therefore, a-IGZO TFT with Ta2O5 can be employed in integrated high-performance nonvolatile memory devices for applications to transparent displays and flexible electronic devices.

Indium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure

2017 ◽  
Vol 31 (35) ◽  
pp. 1750332
Author(s):  
Yu-Rong Liu ◽  
Jie Liu ◽  
Jia-Qi Song ◽  
Pui-To Lai ◽  
Ruo-He Yao
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Practical Applications ◽  
Gate Structure ◽  
Dual Gate ◽  
Indium Gallium ◽  
Output Characteristics

An amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT) with a planar split dual gate (PSDG) structure has been proposed, fabricated and characterized. Experimental results indicate that the two independent gates can provide dynamical control of device characteristics such as threshold voltage, sub-threshold swing, off-state current and saturation current. The transconductance extracted from the output characteristics of the device increases from [Formula: see text] to [Formula: see text] for a change of control gate voltage from −2 V to 2 V, and thus the device could be used in a variable-gain amplifier. A significant advantage of the PSDG structure is its flexibility in controlling the device performance according to the need of practical applications.

An organic-inorganic hybrid semiconductor for flexible thin film transistor using molecular layer deposition

2021 ◽  
Author(s):  
Seung-Hwan Lee ◽  
Hyun-Jun Jeong ◽  
Ki-Lim Han ◽  
GeonHo Beak ◽  
Jin-Seong Park
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Molecular Layer ◽  
Thin Film Transistor ◽  
Hybrid Films ◽  
Molecular Layer Deposition ◽  
Inorganic Hybrid ◽  
Layer Deposition

Indium oxide and indicone hybrid films consisting of indium oxide and organic aromatic linker are grown by molecular layer deposition (MLD) using bis(trimethylsilyl)amido-diethyl Indium (INCA-1) as the indium precursor, hydrogen...

scholarly journals Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075217 ◽  
Author(s):  
Minkyu Chun ◽  
Jae Gwang Um ◽  
Min Sang Park ◽  
Md Delwar Hossain Chowdhury ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Dual Gate ◽  
Gate Potential ◽  
Indium Gallium
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