scholarly journals Raman Measurements in Silicon Nanowires Reveal the Diameter Dependence of Phonon Confinement

MRS Bulletin ◽  
2005 ◽  
Vol 30 (4) ◽  
pp. 266-267 ◽  
Author(s):  
Tao Xu
Keyword(s):  
Silicon Nanowires ◽  
Phonon Confinement

Phonon confinement in oxide-coated silicon nanowires

2004 ◽  
Vol 84 (9) ◽  
pp. 1564-1566 ◽  
Author(s):  
Somnath Bhattacharyya ◽  
Saumyadip Samui
Keyword(s):  
Silicon Nanowires ◽  
Phonon Confinement

Phonon confinement in silicon nanowires synthesized by laser ablation

2006 ◽  
Vol 376-377 ◽  
pp. 864-867 ◽  
Author(s):  
N. Fukata ◽  
T. Oshima ◽  
N. Okada ◽  
T. Kizuka ◽  
T. Tsurui ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Phonon Confinement

Thermal Conductivity in Thin Silicon Nanowires:  Phonon Confinement Effect

Nano Letters ◽  
2007 ◽  
Vol 7 (5) ◽  
pp. 1155-1159 ◽  
Author(s):  
Inna Ponomareva ◽  
Deepak Srivastava ◽  
Madhu Menon
Keyword(s):  
Thermal Conductivity ◽  
Silicon Nanowires ◽  
Confinement Effect ◽  
Phonon Confinement ◽  
Thin Silicon ◽  
Phonon Confinement Effect

scholarly journals Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms

2015 ◽  
Vol 2015 ◽  
pp. 1-11 ◽  
Author(s):  
Stefan Weidemann ◽  
Maximilian Kockert ◽  
Dirk Wallacher ◽  
Manfred Ramsteiner ◽  
Anna Mogilatenko ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Nanowires ◽  
Pore Formation ◽  
Gas Adsorption ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Phonon Confinement ◽  
Single Crystalline ◽  
Boron Doped ◽  
Doped Silicon

Silicon nanowires are prepared by the method of the two-step metal-assisted wet chemical etching. We analyzed the structure of solid, rough, and porous nanowire surfaces of boron-doped silicon substrates with resistivities ofρ> 1000 Ωcm,ρ= 14–23 Ωcm, andρ< 0.01 Ωcm by scanning electron microscopy and nitrogen gas adsorption. Silicon nanowires prepared from highly doped silicon reveal mesopores on their surface. However, we found a limit for pore formation. Pores were only formed by etching below a critical H2O2concentration (cH2O2<0.3 M). Furthermore, we determined the pore size distribution dependent on the etching parameters and characterized the morphology of the pores on the nanowire surface. The pores are in the regime of small mesopores with a mean diameter of 9–13 nm. Crystal and surface structure of individual mesoporous nanowires were investigated by transmission electron microscopy. The vibrational properties of nanowire ensembles were investigated by Raman spectroscopy. Heavily boron-doped silicon nanowires are highly porous and the remaining single crystalline silicon nanoscale mesh leads to a redshift and a strong asymmetric line broadening for Raman scattering by optical phonons at 520 cm−1. This redshift,λSi  bulk=520 cm−1  →λSi  nanowire=512 cm−1, hints to a phonon confinement in mesoporous single crystalline silicon nanowires.

scholarly journals Phonon confinement effect of silicon nanowires synthesized by laser ablation

2005 ◽  
Vol 86 (21) ◽  
pp. 213112 ◽  
Author(s):  
N. Fukata ◽  
T. Oshima ◽  
K. Murakami ◽  
T. Kizuka ◽  
T. Tsurui ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Confinement Effect ◽  
Phonon Confinement ◽  
Phonon Confinement Effect

Raman spectroscopy for study of interplay between phonon confinement and Fano effect in silicon nanowires

2015 ◽  
Vol 47 (3) ◽  
pp. 283-288 ◽  
Author(s):  
Shailendra K. Saxena ◽  
Rupnayan Borah ◽  
Vivek Kumar ◽  
Hari Mohan Rai ◽  
Ravikiran Late ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Silicon Nanowires ◽  
Phonon Confinement ◽  
Fano Effect
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