Inhomogeneous laser heating and phonon confinement in silicon nanowires: A micro-Raman scattering study

2006 ◽  
Vol 73 (15) ◽  
Author(s):  
K. W. Adu ◽  
H. R. Gutiérrez ◽  
U. J. Kim ◽  
P. C. Eklund
Keyword(s):  
Raman Scattering ◽  
Silicon Nanowires ◽  
Laser Heating ◽  
Phonon Confinement ◽  
Scattering Study

Radial Distribution of Active Impurities in IndividualIn situBoron-Doped Silicon Nanowires: A Raman Scattering Study

2010 ◽  
Vol 49 (8) ◽  
pp. 085003 ◽  
Author(s):  
Chiharu Nishimura ◽  
Minoru Fujii ◽  
Takahiro Kawashima ◽  
Tohru Saitoh ◽  
Shinji Hayashi
Keyword(s):  
Raman Scattering ◽  
Radial Distribution ◽  
Silicon Nanowires ◽  
Doped Silicon ◽  
Scattering Study

Raman scattering study of Si nanoclusters formed in Si through a double Au implantation

2011 ◽  
Vol 1354 ◽  
Author(s):  
Gayatri Sahu ◽  
D.P. Mahapatra
Keyword(s):  
Raman Scattering ◽  
Annealing Time ◽  
High Energy ◽  
Low Energy ◽  
Excitation Wavelength ◽  
Narrow Size Distribution ◽  
Phonon Confinement ◽  
Scattering Study ◽  
Fluence Range ◽  
Confinement Model

ABSTRACTA sequential two step 32 keV Au implantation and 1.5 MeV Au irradiation technique has been used to synthesize Si nanoclusters (NCs) in Si. The low energy amorphising implantation has been carried out over a fluence range of (1 – 100) × 1015 cm−2 while the high energy recrystallizing irradiation fluence was fixed at 1 × 1015 cm−2. Samples were further annealed in air at temperatures between 500° to 950° C for a fixed annealing time of 1 hr and were characterized using Raman scattering at an excitation wavelength of 514.5 nm. Results on as-implanted and irradiated samples indicate formation of strained NCs in the top amorphised layer. Annealing around 500°C has been found to result in strain relief after which the data could be well explained using a phonon confinement model with an extremely narrow size distribution.

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