Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C

2013 ◽  
Vol 28 (13) ◽  
pp. 1626-1632 ◽  
Author(s):  
Mario Moreno ◽  
Gilles Patriarche ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Fine Tuning ◽  
Epitaxial Silicon ◽  
High Quality ◽  
Image Position

Abstract

Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition

2006 ◽  
Vol 910 ◽  
Author(s):  
Charles W. Teplin ◽  
Matthew Page ◽  
Eugene Iwaniczko ◽  
Kim M. Jones ◽  
Robert M. Ready ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
Hot Wire ◽  
Film Interface

AbstractWe grow epitaxial silicon films onto (100) silicon wafers from pure silane by hot-wire chemical vapor deposition (HWCVD). The films grow epitaxially for a thickness hepi before a Si:H cones nucleate and expand. We study the dependence of hepi on growth rate and the differences between Ta and W filaments. The surface morphology of thin but completely epitaxial films are studied in order to correlate the surface roughness during growth with the eventual epitaxial breakdown thickness. Surface roughness, strain and H at the wafer/film interface are not likely to cause the observed breakdown.

Doping of high-quality epitaxial silicon grown by hot-wire chemical vapor deposition near 700 °C

2009 ◽  
Vol 517 (12) ◽  
pp. 3496-3498 ◽  
Author(s):  
Ina T. Martin ◽  
Howard M. Branz ◽  
Paul Stradins ◽  
David L. Young ◽  
Robert C. Reedy ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Silicon ◽  
Hot Wire ◽  
High Quality
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