Metalorganic Chemical Vapor Deposition of Nickel Films from Ni(C5H5)2/H2

2000 ◽  
Vol 15 (8) ◽  
pp. 1828-1833 ◽  
Author(s):  
Jin-Kyu Kang ◽  
Shi-Woo Rhee
Keyword(s):  
Carbon Content ◽  
Chemical Vapor ◽  
High Resistivity ◽  
Phase Reaction ◽  
Carbon Incorporation ◽  
Nickel Films ◽  
Nickel Thin Films ◽  
Slow Dissociation ◽  
Kinetics Of ◽  
Lower Resistivity

Nickel thin films were deposited with Ni(C5H5)2 \NiCp2, bis(cyclopentadienyl)nickel, nickelocene]/H2 at various temperatures and H2/Ar ratios. The deposition rate, resistivity, purity, crystal structure, and surface morphology of the nickel film were investigated. Also, thermal analysis was done to find out the dissociation characteristics of NiCp2, and Fourier transform infrared spectroscopy diagnostics were carried out to study the gas phase reaction kinetics of NiCp2. Nickel films deposited at higher temperatures (>225 °C) had high carbon content and high resistivity. At higher temperatures, thermal decomposition of NiCp2 and subsequent decomposition of Cp induced a large amount of carbon incorporation into the film. At lower temperatures (<190 °C), the slow dissociation of NiCp led to some extent of carbon incorporation in the film. Nickel films deposited at around 200 °C showed carbon content lower than 5% and lower resistivity because of the effective dissociation of Ni–Cp and desorption of Cp from the surface. Nickel films deposited with hydrogen addition showed higher purity, crystallinity, and lower resistivity due to the removal of the carbon on the surface.

Carbon Incorporation in Si1-yCy Alloys Grown by Ultrahigh Vacuum Chemical Vapor Deposition

1998 ◽  
Vol 533 ◽  
Author(s):  
A. C. Mocuta ◽  
D. W. Greve
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Content ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Total Carbon ◽  
Carbon Incorporation ◽  
Total Carbon Content

AbstractThin heteroepitaxial Si1-yCy films have been grown on Si (100) by Ultrahigh Vacuum Chemical Vapor Deposition (UHV/CVD) using silane and methylsilane as silicon and carbon precursors. Carbon incorporation has been studied in the growth temperature range of 550°C to 650°C. The layers have been characterized using high resolution X-ray diffraction and secondary ion mass spectrometry. The total carbon content of the alloys increases linearly with the methylsilane partial pressure and a methylsilane sticking coefficient approximately 2 times higher than that of silane was extracted. Layers with up to 1.34 % substitutional carbon have been obtained at the lowest growth temperature. Fully substitutional carbon can be obtained for levels up to 0.65%. Variations of the growth rate with temperature and carbon content are also discussed.

Processing of Pure Ni Mocvd Films

1998 ◽  
Vol 514 ◽  
Author(s):  
Laurent Brissonneau ◽  
Alex Reynes ◽  
Constantin Vahlas
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
Operating Pressure ◽  
Phase Reaction ◽  
Nickel Thin Films ◽  
Weber Type ◽  
Metal Organic ◽  
Mean Size ◽  
The Mean ◽  
Organic Chemical Vapor Deposition

ABSTRACTIn this study are reported results on the processing of nickel thin films by metal-organic chemical vapor deposition starting from nickelocene, at atmospheric and reduced pressures, and at temperatures varying between 150 °C and 300 °C. Films present a Volmer-Weber type nodular morphology. Nodules are composed of small crystallites, the mean size of which is about 50 nm. Carbon (up to 10 at. % depending on processing conditions) is incorporated at interstitial rather than intergranular position in the films. High operating pressure favors carbonfree films. An analysis of the gas phase reaction by mass spectrometry is presented in order to understand the mechanisms of the carbon contamination of the deposits.

Oxidation Kinetics of Metastable Electrodeposited and Sputtered Nickel Thin Films Via Thermogravimetric Analysis

1990 ◽  
Vol 187 ◽  
Author(s):  
Ann C. Herrmann ◽  
D William E. Brower ◽  
Shashi Lalvani
Keyword(s):  
Oxidation Kinetics ◽  
Amorphous State ◽  
Pure Nickel ◽  
Nickel Films ◽  
Nickel Thin Films ◽  
Thermogravimetric Analyzer ◽  
Sputtered Films ◽  
Oxidation Resistant ◽  
Kinetics Of

AbstractThe effetzct of the amorphous state and the disordered sputtered state on the oxidation kinetics of nickel films was investigated by a comparison with annealed films and with pure nickel foil and powder. Specimens were exposed to oxygen in a thermogravimetric analyzer (TGA) in the temperature scan mode. An electrodeposited amorphous Ni-P alloy and sputtered pure nickel films were annealed in situ in argon and then oxidized in the same manner as the as deposited films. The as sputtered films oxidized faster at 500%C than pieces of the same film first annealed in argon. Conversely, the as deposited Ni-P film was more oxidation resistant below its crystallization temperature than the annealed Ni-P films.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

scholarly journals Study of deposition parameters and growth kinetics of ZnO deposited by aerosol assisted chemical vapor deposition

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18493-18499
Author(s):  
Sergio Sánchez-Martín ◽  
S. M. Olaizola ◽  
E. Castaño ◽  
E. Urionabarrenetxea ◽  
G. G. Mandayo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Kinetics Analysis ◽  
Deposition Parameters ◽  
Kinetics Of

Impact of deposition parameters, microstructure and growth kinetics analysis of ZnO grown by Aerosol-assisted Chemical Vapor Deposition (AACVD).

scholarly journals Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 697
Author(s):  
Yu-He Liu ◽  
Xiao-Yan Liu ◽  
Hui Sun ◽  
Bo Dai ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Loss ◽  
Single Crystal ◽  
Oxygen Stoichiometry ◽  
High Resistivity ◽  
Edge Structure ◽  
Glass Substrates ◽  
Lower Resistivity

Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties.

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