Oxidation Kinetics of Metastable Electrodeposited and Sputtered Nickel Thin Films Via Thermogravimetric Analysis

1990 ◽  
Vol 187 ◽  
Author(s):  
Ann C. Herrmann ◽  
D William E. Brower ◽  
Shashi Lalvani
Keyword(s):  
Oxidation Kinetics ◽  
Amorphous State ◽  
Pure Nickel ◽  
Nickel Films ◽  
Nickel Thin Films ◽  
Thermogravimetric Analyzer ◽  
Sputtered Films ◽  
Oxidation Resistant ◽  
Kinetics Of

AbstractThe effetzct of the amorphous state and the disordered sputtered state on the oxidation kinetics of nickel films was investigated by a comparison with annealed films and with pure nickel foil and powder. Specimens were exposed to oxygen in a thermogravimetric analyzer (TGA) in the temperature scan mode. An electrodeposited amorphous Ni-P alloy and sputtered pure nickel films were annealed in situ in argon and then oxidized in the same manner as the as deposited films. The as sputtered films oxidized faster at 500%C than pieces of the same film first annealed in argon. Conversely, the as deposited Ni-P film was more oxidation resistant below its crystallization temperature than the annealed Ni-P films.

Synthesis and Oxidation Kinetics of Sol-Gel and Sputtered Tantalum Nitride Thin Films

1995 ◽  
Vol 410 ◽  
Author(s):  
Gerald T. Kraus ◽  
Cory S. Oldweiler ◽  
Emmanuel P. Giannelis
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Oxidation Kinetics ◽  
Sol Gel ◽  
Tantalum Nitride ◽  
Sputtered Films ◽  
Parabolic Oxidation ◽  
Sol Gel Films ◽  
Kinetics Of

ABSTRACTTantalum nitride thin films were produced by nitridation of sol-gel tantala thin films. The oxidation kinetics and the activation energy for oxidation were investigated and compared to those of sputtered tantalum nitride thin films. Data was gathered from in situ sheet resistance measurements taken between 550 and 720 K. Sol-gel films exhibited parabolic oxidation kinetics and had an activation energy of 1.9 eV. Sputtered films displayed quartic oxidation kinetics at lower temperatures tending toward cubic kinetics at higher temperatures and had an activation energy of 1.6 eV.

Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

2017 ◽  
Vol 121 (24) ◽  
pp. 245308 ◽  
Author(s):  
Fabien Rozé ◽  
Olivier Gourhant ◽  
Elisabeth Blanquet ◽  
François Bertin ◽  
Marc Juhel ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Kinetics ◽  
Steam Generation ◽  
Rapid Thermal Oxidation ◽  
Kinetics Of

Metalorganic Chemical Vapor Deposition of Nickel Films from Ni(C5H5)2/H2

2000 ◽  
Vol 15 (8) ◽  
pp. 1828-1833 ◽  
Author(s):  
Jin-Kyu Kang ◽  
Shi-Woo Rhee
Keyword(s):  
Carbon Content ◽  
Chemical Vapor ◽  
High Resistivity ◽  
Phase Reaction ◽  
Carbon Incorporation ◽  
Nickel Films ◽  
Nickel Thin Films ◽  
Slow Dissociation ◽  
Kinetics Of ◽  
Lower Resistivity

Nickel thin films were deposited with Ni(C5H5)2 \NiCp2, bis(cyclopentadienyl)nickel, nickelocene]/H2 at various temperatures and H2/Ar ratios. The deposition rate, resistivity, purity, crystal structure, and surface morphology of the nickel film were investigated. Also, thermal analysis was done to find out the dissociation characteristics of NiCp2, and Fourier transform infrared spectroscopy diagnostics were carried out to study the gas phase reaction kinetics of NiCp2. Nickel films deposited at higher temperatures (>225 °C) had high carbon content and high resistivity. At higher temperatures, thermal decomposition of NiCp2 and subsequent decomposition of Cp induced a large amount of carbon incorporation into the film. At lower temperatures (<190 °C), the slow dissociation of NiCp led to some extent of carbon incorporation in the film. Nickel films deposited at around 200 °C showed carbon content lower than 5% and lower resistivity because of the effective dissociation of Ni–Cp and desorption of Cp from the surface. Nickel films deposited with hydrogen addition showed higher purity, crystallinity, and lower resistivity due to the removal of the carbon on the surface.

Oxidation Kinetics of Zirconium Examined by In Situ X-ray Diffraction

2013 ◽  
Vol 160 (3) ◽  
pp. C136-C141 ◽  
Author(s):  
N. Lakshmi ◽  
H.-I. Yoo ◽  
M. Martin
Keyword(s):  
Oxidation Kinetics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Kinetics Of
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