Processing of Pure Ni Mocvd Films

1998 ◽  
Vol 514 ◽  
Author(s):  
Laurent Brissonneau ◽  
Alex Reynes ◽  
Constantin Vahlas
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
Operating Pressure ◽  
Phase Reaction ◽  
Nickel Thin Films ◽  
Weber Type ◽  
Metal Organic ◽  
Mean Size ◽  
The Mean ◽  
Organic Chemical Vapor Deposition

ABSTRACTIn this study are reported results on the processing of nickel thin films by metal-organic chemical vapor deposition starting from nickelocene, at atmospheric and reduced pressures, and at temperatures varying between 150 °C and 300 °C. Films present a Volmer-Weber type nodular morphology. Nodules are composed of small crystallites, the mean size of which is about 50 nm. Carbon (up to 10 at. % depending on processing conditions) is incorporated at interstitial rather than intergranular position in the films. High operating pressure favors carbonfree films. An analysis of the gas phase reaction by mass spectrometry is presented in order to understand the mechanisms of the carbon contamination of the deposits.

Novel Design of MOCVD Reactor with Three Radial Inward Flows for Epitaxial Growth of GaN Thin Films

2011 ◽  
Vol 308-310 ◽  
pp. 1037-1040
Author(s):  
Liao Qiao Yang ◽  
Jian Zheng Hu ◽  
Zun Miao Chen ◽  
Jian Hua Zhang ◽  
Alan G. Li
Keyword(s):  
Gas Flow ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Operating Pressure ◽  
Axisymmetric Mode ◽  
Mocvd Reactor ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
D Model

In this paper, a novel super large metal organic chemical vapor deposition (MOCVD) reactor with three inlets located on the periphery of reactor was proposed and numerical evaluation of growth conditions for GaN thin film was characterized. In this design, the converging effects of gas flow in the radial direction could counterbalance the dissipation of metal organics source. CFD was used for the mathematical solution of the fluid flow, temperature and concentration fields. A 2-D model utilizing axisymmetric mode to simulate the gas flow in a MOCVD has been developed. The growth of GaN films using TMGa as a precursor, hydrogen as carrier gas was investigated. The effects of flow rates, mass fraction of various species, operating pressure, and gravity were analyzed and discussed, respectively. The numerical simulation results show all the fields distributions were in an acceptable range.

Preparation and Characterization of Nanosized Al2O3 Particles Synthesized by the thermal MOCVD and Plasma CVD

2006 ◽  
Vol 321-323 ◽  
pp. 1683-1686 ◽  
Author(s):  
Hee Joon Kim ◽  
Se Woong Oh ◽  
Hiroyuki Noda ◽  
Ho Jung Chang ◽  
Lae Hyun Kim
Keyword(s):  
Chemical Vapor ◽  
Xrd Analysis ◽  
Al2o3 Particle ◽  
Organic Chemical ◽  
Plasma Cvd ◽  
Transmission Electron ◽  
Metal Organic ◽  
The Mean ◽  
Organic Chemical Vapor Deposition

In this paper, nano-sized Al2O3 powders are synthesized by a thermal MOCVD (Metal Organic Chemical Vapor Deposition) combined with plasma. The effect of reaction temperature on the characteristics of the synthesized Al2O3 powders is investigated. The experimental results demonstrate that while the temperature is increased from 200oC to 1000oC, the mean diameter of Al2O3 powders reaches from 400nm to 10nm. Hence, the increment of temperature can promote the synthesis of fine Al2O3 particle. Furthermore, the powder morphologies and crystallite size are also examined by the transmission electron microscopy (TEM) and XRD. Based on TEM observation, it is found that the particles are sphere shape. The XRD analysis shows that the particles are typical γ-Al2O3 crystalline phase over 400oC. Lastly, the effect of plasma on the characteristic of Al2O3 synthesized by thermal MOCVD is also considered.

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers

ACS Nano ◽  
2020 ◽  
Author(s):  
Assael Cohen ◽  
Avinash Patsha ◽  
Pranab K. Mohapatra ◽  
Miri Kazes ◽  
Kamalakannan Ranganathan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Electron Irradiation Induced Trap In N-Type Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
Z-Q. Fang ◽  
J. W. Hemsky ◽  
D. C. Look ◽  
M. P. Mack ◽  
R. J. Molnar ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Electric Field Effects ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Organic Chemical Vapor Deposition

AbstractA 1-MeV-electron-irradiation (EI) induced trap at Ec-0.18 eV is found in n-type GaN by deep level transient spectroscopy (DLTS) measurements on Schottky barrier diodes, fabricated on both metal-organic-chemical-vapor-deposition and hydride-vapor-phase-epitaxy material grown on sapphire. The 300-K carrier concentrations of the two materials are 2.3 × 1016 cm−3 and 1.3 × 1017 cm−3, respectively. Up to an irradiation dose of 1 × 1015 cm−2, the electron concentrations and pre-existing traps in the GaN layers are not significantly affected, while the EI-induced trap is produced at a rate of at least 0.2 cm−1. The DLTS peaks in the two materials are shifted slightly, possibly due to electric-field effects. Comparison with theory suggests that the defect is most likely associated with the N vacancy or Ga interstitial.

Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition

2021 ◽  
Vol 118 (16) ◽  
pp. 162109
Author(s):  
Esmat Farzana ◽  
Fikadu Alema ◽  
Wan Ying Ho ◽  
Akhil Mauze ◽  
Takeki Itoh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Schottky Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Schottky Barrier Diode ◽  
Organic Chemical ◽  
Field Plate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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