Role of Yttria-stabilized Zirconia Produced by Ion-beam-assisted Deposition on the Properties of RuO2 on SiO2/Si

1998 ◽  
Vol 13 (9) ◽  
pp. 2461-2464 ◽  
Author(s):  
Q. X. Jia ◽  
P. Arendt ◽  
J. R. Groves ◽  
Y. Fan ◽  
J. M. Roper ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Substrate Surface ◽  
Residual Resistivity ◽  
Yttria Stabilized Zirconia ◽  
Room Temperature Resistivity ◽  
Stabilized Zirconia ◽  
Residual Resistivity Ratio ◽  
Resistivity Ratio ◽  
Ion Beam Assisted Deposition

Highly conductive biaxially textured RuO2 thin films were deposited on technically important SiO2/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO2 on SiO2/Si. The biaxially oriented RuO2 had a room-temperature resistivity of 37 μΔ-cm and residual resistivity ratio above 2. We then deposited Ba0.5Sr0.5TiO3 thin films on RuO2/IBAD-YSZ/SiO2/Si. The Ba0.5Sr0.5TiO3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz.

Growth of Biaxially Textured Yttria-Stabilized Zirconia Thin Films on Si(111) Substrate by Ion Beam Assisted Deposition

2000 ◽  
Vol 17 (3) ◽  
pp. 221-223
Author(s):  
Hai-Chuan Mu (Hai-Cuan Mu) ◽  
Cong-Xin Ren ◽  
Bing-Yao Jiang ◽  
Xing-Zhao Ding ◽  
Yue-Hui Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Ion Beam Assisted Deposition

HIGH QUALITY FULLY IN-SITU MgB2 THIN FILMS OBTAINED BY DC MAGNETRON SPUTTERING

2003 ◽  
Vol 17 (04n06) ◽  
pp. 779-784 ◽  
Author(s):  
M. G. MAGLIONE ◽  
F. CHIARELLA ◽  
R. DI CAPUA ◽  
R. VAGLIO ◽  
M. SALVATO ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Target Surface ◽  
Residual Resistivity ◽  
Precursor Film ◽  
Large Area ◽  
Residual Resistivity Ratio ◽  
Resistivity Ratio

MgB 2 thin films were grown in-situ at INFM- University of Naples by a magnetron sputtering technique in a UHV system (10-7 Pa) equipped with 3 focused 2′′ magnetron sources (a stoichiometric MgB 2 and metallic Mg and B targets by Superconducting Components Inc.). The substrates (sapphire or MgO) were placed "on axis" at 7 cm from the target surface on the surface of a molybdenum heater that could be operated up to 1000°C under vacuum. Best results were obtained codepositing MgB 2 and Mg at equal sputtering power (500W) for 10 min on cold substrates, resulting in a Mg rich Mg-B precursor film. The films were then annealed inhyphen;situ at 830°C for 10 min in a In sealed Nb box in presence of saturated Mg vapor. The process is highly reproducible and can be easily scaled to produce large area films. The resulting films were about 1μm thick, with 100nm surface roughness as measured by AFM Resistive transition showed a maximum T c of 35 K and a transition width lower than 0.5 K. The residual resistivity ratio was 1.6 for the best sample. Resistivity measurements in external magnetic field up to 8 T have been performed both in parallel and perpendicular configuration. The upper critical magnetic field vs. temperature behavior has been determined from the experimental data and the superconducting anisotropy has been calculated for samples with different T c .

An orientation competition in yttria-stabilized zirconia thin films fabricated by ion beam assisted sputtering deposition

2011 ◽  
Vol 520 (3) ◽  
pp. 1115-1119 ◽  
Author(s):  
Z. Wang ◽  
Z.J. Zhao ◽  
B.J. Yan ◽  
Y.L. Li ◽  
F. Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Sputtering Deposition
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