An orientation competition in yttria-stabilized zirconia thin films fabricated by ion beam assisted sputtering deposition

2011 ◽  
Vol 520 (3) ◽  
pp. 1115-1119 ◽  
Author(s):  
Z. Wang ◽  
Z.J. Zhao ◽  
B.J. Yan ◽  
Y.L. Li ◽  
F. Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Sputtering Deposition

Growth of highly oriented La0.84Sr0.16MnO3 perovskite films

1995 ◽  
Vol 10 (10) ◽  
pp. 2518-2522 ◽  
Author(s):  
Brandon W. Chung ◽  
Eric L. Brosha ◽  
Fernando H. Garzon ◽  
Ian D. Raistrick ◽  
Robert J. Houlton ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Rf Magnetron Sputtering ◽  
Scanning Tunneling ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Tunneling Microscopy ◽  
Sputtering Deposition ◽  
X Ray ◽  
Deposited Films

We have grown thin films of La0.84Sr0.16MnO3 on SrTiO3 (100), MgO (100), CeO2 (100)/Al2O3, and (100) oriented yttria-stabilized zirconia (YSZ) substrates by using a 90°off-axis RF magnetron sputtering deposition. X-ray diffraction analysis and ion beam channeling experiments reveal that the deposited films grow epitaxially on SrTiO3, biaxially textured on MgO, and highly textured on YSZ. Scanning tunneling microscopy reveals that the thin films possess extremely smooth surfaces.

Role of Yttria-stabilized Zirconia Produced by Ion-beam-assisted Deposition on the Properties of RuO2 on SiO2/Si

1998 ◽  
Vol 13 (9) ◽  
pp. 2461-2464 ◽  
Author(s):  
Q. X. Jia ◽  
P. Arendt ◽  
J. R. Groves ◽  
Y. Fan ◽  
J. M. Roper ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Substrate Surface ◽  
Residual Resistivity ◽  
Yttria Stabilized Zirconia ◽  
Room Temperature Resistivity ◽  
Stabilized Zirconia ◽  
Residual Resistivity Ratio ◽  
Resistivity Ratio ◽  
Ion Beam Assisted Deposition

Highly conductive biaxially textured RuO2 thin films were deposited on technically important SiO2/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO2 on SiO2/Si. The biaxially oriented RuO2 had a room-temperature resistivity of 37 μΔ-cm and residual resistivity ratio above 2. We then deposited Ba0.5Sr0.5TiO3 thin films on RuO2/IBAD-YSZ/SiO2/Si. The Ba0.5Sr0.5TiO3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz.

scholarly journals Effect of ion-beam parameters on in-plane texture of yttria-stabilized zirconia thin films

2001 ◽  
Vol 11 (1) ◽  
pp. 3485-3488 ◽  
Author(s):  
T.G. Truchan ◽  
M.P. Chudzik ◽  
B.L. Fisher ◽  
R.A. Erck ◽  
K.C. Goretta ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Beam Parameters

Growth of Biaxially Textured Yttria-Stabilized Zirconia Thin Films on Si(111) Substrate by Ion Beam Assisted Deposition

2000 ◽  
Vol 17 (3) ◽  
pp. 221-223
Author(s):  
Hai-Chuan Mu (Hai-Cuan Mu) ◽  
Cong-Xin Ren ◽  
Bing-Yao Jiang ◽  
Xing-Zhao Ding ◽  
Yue-Hui Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Ion Beam Assisted Deposition

Electrochemical behavior of silver thin films interfaced with yttria-stabilized zirconia

2014 ◽  
Vol 18 (8) ◽  
pp. 2267-2277 ◽  
Author(s):  
Michèle Fee ◽  
Spyridon Ntais ◽  
Arnaud Weck ◽  
Elena A. Baranova
Keyword(s):  
Thin Films ◽  
Electrochemical Behavior ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Silver Thin Films
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