Growth of Ti thin films on sapphire substrates

1997 ◽  
Vol 12 (7) ◽  
pp. 1856-1865 ◽  
Author(s):  
S. Rao Peddada ◽  
I. M. Robertson ◽  
H. K. Birnbaum
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Single Phase ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Sapphire Substrates ◽  
Titanium Thin Films ◽  
Sapphire Single Crystal ◽  
20 Nm ◽  
Ti Films

Titanium thin films have been grown by electron-beam physical vapor deposition on the (0001) surface of sapphire (single crystal α−Al2O3) substrates at growth temperatures ranging from 295 to 1223 K. Single phase α−Ti films grew at all growth temperatures, even at 1223 K which is above the α-β transition temperature of Ti. Crystal quality, as measured by the width of x-ray rocking curves, was found to improve, and the elastic strain to increase, as the growth temperature increased from 295 K to 1023 K. The epitaxial relationship between the Ti and sapphire was (0002)Ti ‖ (0006)Al2O3 and [1120]Ti ‖ [1010]Al2O3. The extent of interdiffusion across the Ti/Al2O3 interface was observed to be small (< 20 nm) at all growth temperatures.

A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

1992 ◽  
Vol 242 ◽  
Author(s):  
T. D. Moustakas ◽  
R. J. Molnar ◽  
T. Lei ◽  
G. Menon ◽  
C. R. Eddy
Keyword(s):  
Surface Morphology ◽  
Low Temperatures ◽  
Smooth Surface ◽  
Growth Process ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Sapphire Substrates ◽  
Growth Method ◽  
Step Growth

ABSTRACTGaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.

Influence of Interfacial Copper on the Ti-SiO2 Reaction During Nitridation of Cu-Ti Films

1995 ◽  
Vol 398 ◽  
Author(s):  
Daniel Adams ◽  
T.L. Alford ◽  
N.D. Theodore ◽  
T. Laursen ◽  
S.W. Russell ◽  
...  
Keyword(s):  
Free Surface ◽  
High Resolution ◽  
Consumption Rate ◽  
Catalytic Effect ◽  
Energy Dispersive ◽  
Ti Alloy ◽  
Alloy Films ◽  
X Ray ◽  
20 Nm ◽  
Ti Films

ABSTRACTCu(90 nm)/Ti(20 nm) bilayers and Cu(Ti 27 at.%) alloy films were deposited on SiO2 and annealed in an NH3 ambient at temperatures 400–700° C for 30 min. During annealing Ti segregated to both the free surface and the alloy/SiO2 interface. At the surface Ti reacted with NH3 to form TiN, whereas at the interface the Ti reacted with the SiO2 to form a TiO/Ti5Si3 structure. High resolution energy dispersive x-ray analysis revealed the presence of interfacial Cu between the Ti-silicide and Ti-oxide layers at temperatures greater than 450°C. Using Cu-Ti alloy films enhanced the Si02 consumption rate by a factor of 3-4 compared to that of pure Ti. It is suggested that the interfacial Cu is responsible for the increased rate. It is plausible that an interfacial Cu2O component has a catalytic effect on the Ti- SiO2 reaction.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

scholarly journals Generation of Charged Ti Nanoparticles and Their Deposition Behavior with a Substrate Bias during RF Magnetron Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 443
Author(s):  
Ji-Hye Kwon ◽  
Du-Yun Kim ◽  
Nong-Moon Hwang
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Film Growth ◽  
Film Deposition ◽  
Calculated Density ◽  
X Ray ◽  
Positively Charged ◽  
Made In ◽  
Ti Films

This study is based on the film growth by non-classical crystallization, where charged nanoparticles (NPs) are the building block of film deposition. Extensive studies about the generation of charged NPs and their contribution to film deposition have been made in the chemical vapor deposition (CVD) process. However, only a few studies have been made in the physical vapor deposition (PVD) process. Here, the possibility for Ti films to grow by charged Ti NPs was studied during radio frequency (RF) sputtering using Ti target. After the generation of charged Ti NPs was confirmed, their influence on the film quality was investigated. Charged Ti NPs were captured on amorphous carbon membranes with the electric bias of −70 V, 0 V, +5 V, +15 V and +30 V and examined by transmission electron microscopy (TEM). The number density of the Ti NPs decreased with increasing positive bias, which showed that some of Ti NPs were positively charged and repelled by the positively biased TEM membrane. Ti films were deposited on Si substrates with the bias of −70 V, 0 V and +30 V and analyzed by TEM, field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray reflectivity (XRR). The film deposited at −70 V had the highest thickness of 180 nm, calculated density of 4.974 g/cm3 and crystallinity, whereas the film deposited at +30 V had the lowest thickness of 92 nm, calculated density of 3.499 g/cm3 and crystallinity. This was attributed to the attraction of positively charged Ti NPs to the substrate at −70 V and to the landing of only small-sized neutral Ti NPs on the substrate at +30 V. These results indicate that the control of charged NPs is necessary to obtain a high quality thin film at room temperature.

Structural and Optical Properties of TiO2 Thin Films Prepared by Thermal Oxidation of Ti Thin Films

2013 ◽  
Vol 770 ◽  
pp. 225-228
Author(s):  
L. Uttayan ◽  
K. Aiempanakit ◽  
M. Horprathum ◽  
P. Eiamchai ◽  
V. Pattantsetakul ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Oxidation ◽  
Annealing Temperature ◽  
Oxidation Process ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Wafer Substrate ◽  
Uv Visible ◽  
Ti Films

Titanium dioxide (TiO2) films were prepared by thermal oxidation from Ti films. The Ti films were deposited on glass and silicon (100) wafer substrate by dc magnetron sputtering and subsequent with thermal oxidation process. The crystal structure and morphology of TiO2 films were estimated by using X-ray diffractometry (XRD) and field-emission scanning electron microscopy (FE-SEM), respectively. The optical property of TiO2 films was determined by UV-Visible spectrophotometer. The influences of annealing temperature between 200 to 500°C in air for 1 hour on the structure and optical properties of TiO2 films were investigated. The increasing of annealing temperature was directly affected the phase transition from Ti to TiO2. The optical and structural properties of TiO2 films are the best exhibited with increasing the annealing temperature at 500 °C.

Interface reactions between titanium thin films and (1¯1 2) sapphire substrates

1991 ◽  
Vol 26 (23) ◽  
pp. 6300-6308 ◽  
Author(s):  
J. H. Selverian ◽  
F. S. Ohuchi ◽  
M. Bortz ◽  
M. R. Notis
Keyword(s):  
Thin Films ◽  
Interface Reactions ◽  
Sapphire Substrates ◽  
Titanium Thin Films

Effect of Manganese on Titanium Thin Films Adhesion Deposited on Steel Substrates

2012 ◽  
Vol 326-328 ◽  
pp. 583-586
Author(s):  
R. Gheriani ◽  
Raouf Mechiakh
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Vacuum Annealing ◽  
Pure Titanium ◽  
Nucleation And Growth ◽  
Thin Solid Films ◽  
X Ray ◽  
Solid Films ◽  
Titanium Thin Films ◽  
Steel Substrates

The mainly property of thin solid films technologies is their adhesion to the substrates. Because of its good wear resistance and its low coefficient of friction against steel, TiC is an attractive coating material for wear applications such as bearing components. The adhesion of TiC coatings, however suffers from insufficient reproducibility, which is probably due to uncontrolled process parameters. In our work pure titanium thin films of approximately 0.6 µm in thickness were prepared on 100C6 stainless steel substrates by cathodic sputtering. The samples were subjected to secondary vacuum annealing at a temperature between 400 and 1000°C for 30 min. The reaction between substrates and thin films was characterized using an x-ray diffractometer (XRD). Surface morphology and elements diffusion evaluations were carried out by scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS). The interaction substrates-thin films is accompanied by nucleation and growth of titanium carbide as a function of annealing temperature. By the SEM and EDS results, it appears clearly that the diffusion of manganese to the external layers leads to the destruction of adhesion especially at high temperatures.

Microstructural Evolution of Epitaxial LiNbO3 Thin Films Derived From Metal Alkoxide Solutions

1990 ◽  
Vol 202 ◽  
Author(s):  
Keiichi Nashimoto ◽  
Michael J. Cima ◽  
Wendell E. Rhine
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Single Phase ◽  
Sol Gel ◽  
Precursor Solution ◽  
Epitaxial Films ◽  
Metal Alkoxide ◽  
High Annealing Temperature ◽  
Sapphire Substrates ◽  
High Annealing

ABSTRACTThe evolution of the microstructure of sol-gel derived LiNbO3 thin films was investigated to understand the growth of epitaxial films. LiNbO3 films were prepared from a precursor solution of lithium ethoxide and niobium pentaethoxide. Prehydrolysis promoted the development of polycrys-talline LiNbO3 films, whereas nonhydrolysis produced solid-state epitaxial growth of LiNbO3 films on sapphire substrates. Although the films looked smooth after annealing at 400°C, the morphology of the films changed, depending on substrates and precursors, due to grain growth at high annealing temperature. Prehydrolysis of the alkoxides caused a decrease in the temperature at which grain growth occurred, whereas the film prepared from the nonhydrolyzed precursor on a sapphire substrate showed denser texture and contained abnormally large domains that appeared to be single phase.

Heteroepitaxial growth of single-phase ε-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer

CrystEngComm ◽  
2018 ◽  
Vol 20 (40) ◽  
pp. 6236-6242 ◽  
Author(s):  
Y. Arata ◽  
H. Nishinaka ◽  
D. Tahara ◽  
M. Yoshimoto
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Gallium Oxide ◽  
Single Phase ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Sapphire Substrates

In this study, single-phase ε-gallium oxide (Ga2O3) thin films were heteroepitaxially grown on c-plane sapphire substrates.

Single-phase TiO2 formation by plasma oxidation of titanium thin films

2015 ◽  
Vol 47 (8) ◽  
pp. 828-831
Author(s):  
Deepti A. Rukade ◽  
Varsha Bhattacharyya
Keyword(s):  
Thin Films ◽  
Single Phase ◽  
Plasma Oxidation ◽  
Titanium Thin Films
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