Interface reactions between titanium thin films and (1¯1 2) sapphire substrates

1991 ◽  
Vol 26 (23) ◽  
pp. 6300-6308 ◽  
Author(s):  
J. H. Selverian ◽  
F. S. Ohuchi ◽  
M. Bortz ◽  
M. R. Notis
1997 ◽  
Vol 12 (7) ◽  
pp. 1856-1865 ◽  
Author(s):  
S. Rao Peddada ◽  
I. M. Robertson ◽  
H. K. Birnbaum

Titanium thin films have been grown by electron-beam physical vapor deposition on the (0001) surface of sapphire (single crystal α−Al2O3) substrates at growth temperatures ranging from 295 to 1223 K. Single phase α−Ti films grew at all growth temperatures, even at 1223 K which is above the α-β transition temperature of Ti. Crystal quality, as measured by the width of x-ray rocking curves, was found to improve, and the elastic strain to increase, as the growth temperature increased from 295 K to 1023 K. The epitaxial relationship between the Ti and sapphire was (0002)Ti ‖ (0006)Al2O3 and [1120]Ti ‖ [1010]Al2O3. The extent of interdiffusion across the Ti/Al2O3 interface was observed to be small (< 20 nm) at all growth temperatures.


2010 ◽  
Vol 518 (10) ◽  
pp. 2632-2636 ◽  
Author(s):  
Taslema Sultana ◽  
Golam Newaz ◽  
Grigor L. Georgiev ◽  
Ronald J. Baird ◽  
Gregory W. Auner ◽  
...  

1982 ◽  
Vol 21 (Part 1, No. 10) ◽  
pp. 1427-1430 ◽  
Author(s):  
Keiichi Tanabe ◽  
Osamu Michikami

1993 ◽  
Vol 74 (7) ◽  
pp. 4430-4437 ◽  
Author(s):  
T. Lei ◽  
K. F. Ludwig ◽  
T. D. Moustakas

2013 ◽  
Vol 364 ◽  
pp. 30-33 ◽  
Author(s):  
Norihiro Suzuki ◽  
Kentaro Kaneko ◽  
Shizuo Fujita

2011 ◽  
Vol 326 (1) ◽  
pp. 9-13 ◽  
Author(s):  
Se-Yun Kim ◽  
Sang-Yun Sung ◽  
Kwang-Min Jo ◽  
Joon-Hyung Lee ◽  
Jeong-Joo Kim ◽  
...  

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