Single-phase TiO2 formation by plasma oxidation of titanium thin films

2015 ◽  
Vol 47 (8) ◽  
pp. 828-831
Author(s):  
Deepti A. Rukade ◽  
Varsha Bhattacharyya
Keyword(s):  
Thin Films ◽  
Single Phase ◽  
Plasma Oxidation ◽  
Titanium Thin Films

The plasma oxidation of titanium thin films to form dielectric layers

1989 ◽  
Vol 66 (6) ◽  
pp. 2320-2324 ◽  
Author(s):  
G. P. Burns ◽  
I. S. Baldwin ◽  
M. P. Hastings ◽  
J. G. Wilkes
Keyword(s):  
Thin Films ◽  
Plasma Oxidation ◽  
Dielectric Layers ◽  
Titanium Thin Films

Growth of Ti thin films on sapphire substrates

1997 ◽  
Vol 12 (7) ◽  
pp. 1856-1865 ◽  
Author(s):  
S. Rao Peddada ◽  
I. M. Robertson ◽  
H. K. Birnbaum
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Single Phase ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Sapphire Substrates ◽  
Titanium Thin Films ◽  
Sapphire Single Crystal ◽  
20 Nm ◽  
Ti Films

Titanium thin films have been grown by electron-beam physical vapor deposition on the (0001) surface of sapphire (single crystal α−Al2O3) substrates at growth temperatures ranging from 295 to 1223 K. Single phase α−Ti films grew at all growth temperatures, even at 1223 K which is above the α-β transition temperature of Ti. Crystal quality, as measured by the width of x-ray rocking curves, was found to improve, and the elastic strain to increase, as the growth temperature increased from 295 K to 1023 K. The epitaxial relationship between the Ti and sapphire was (0002)Ti ‖ (0006)Al2O3 and [1120]Ti ‖ [1010]Al2O3. The extent of interdiffusion across the Ti/Al2O3 interface was observed to be small (< 20 nm) at all growth temperatures.

Chemical Vapor Deposition of Sr1−xBaxNb2O6 Thin Films Using Metal Alkoxide Precursors

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thin Layers ◽  
Metal Alkoxide ◽  
Stoichiometry Control ◽  
Alkoxide Precursors

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

A study of titanium thin films in transmission laser micro-joining of titanium-coated glass to polyimide

2010 ◽  
Vol 518 (10) ◽  
pp. 2632-2636 ◽  
Author(s):  
Taslema Sultana ◽  
Golam Newaz ◽  
Grigor L. Georgiev ◽  
Ronald J. Baird ◽  
Gregory W. Auner ◽  
...  
Keyword(s):  
Thin Films ◽  
Coated Glass ◽  
Titanium Thin Films

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

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