Preparation of highly oriented polycrystalline AlN thin films deposited on glass at oblique-angle incidence

1997 ◽  
Vol 12 (7) ◽  
pp. 1689-1692 ◽  
Author(s):  
A. Rodríguez-Navarro ◽  
W. Otañno-Rivera ◽  
J. M. García-Ruiz ◽  
R. Messier ◽  
L. J. Pilione
Keyword(s):  
Thin Films ◽  
Normal Population ◽  
Rf Sputtering ◽  
Normal Incidence ◽  
Angle Of Incidence ◽  
X Ray ◽  
Glancing Angle ◽  
Amorphous Substrates ◽  
Oriented Polycrystalline ◽  
Sputtering System

A new method to prepare polycrystalline AlN thin films biaxially oriented on amorphous substrates has been demonstrated. The films were deposited at different angles of incidence with a rf sputtering system. Population-1 crystallites, oriented with their c-axis pointing toward the incoming flux with random orientation in aximuthal directions, predominate at low angle of incidence (near normal). Population-2 crystallites result from non-normal incidence and have their c-axis tilted away from the incoming flux and predominate at high, near glancing, angle of incidence. The alignment of crystallites (population-2) increases with angle of incidence. Crystallites align along the [11*0] channeling direction, characterized by a low sputtering yield, while misoriented crystal grains suffer a higher resputtering and their growth is inhibited. For films deposited at 75°, the FWHM of an x-ray ϕ scan profile is 25°, indicating a high in-plane alignment.

The Calcination Temperature Effect on the Phase Formation of the PZT Ceramic: How the same Calcination Temperature, Result in Different Phase’s Formation

2021 ◽  
Vol 406 ◽  
pp. 256-264
Author(s):  
Mohammed Mahdi ◽  
M. Kadri
Keyword(s):  
Thin Films ◽  
Calcination Temperature ◽  
Relative Intensity ◽  
Molar Mass ◽  
Rf Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metallic Oxides ◽  
Xrd Patterns ◽  
Sputtering System

First, the metallic oxides of PbO, TiO2 and ZrO2 were mixed following (2, 1, 1) molar mass respectively. Then 4 samples were separated (S1, S2, S3 and S4). the first one S1 was subjected to calcination treatments at 600, 700 and 800 °C however, the S2 was treated at 700 °C only, the S3 at 800 °C and S4 at 850 °C. The X ray diffraction of the samples reveals important difference in the phases obtained, at 600 °C the quadratic riche phase of PbTiO3 was mainly observed on sample S1, after the treatment at 700 °C and 800°C, the same XRD patterns were obtained with the same peaks positions and the relative intensity. However the S2 revels different pattern from S1 at 700 °C relative to the formation of the Pb(Zr0.75, Ti0.25)O3 Rhombohedral riche phase. The S3 XRD results reveal also different pattern from S1 at 800 °C relative to the formation of Pb (Zr0.58, Ti0.42) O3 near the Morphotropic phase boundary (MPB) and the S4 confirm these finding. Thin films grown from the S1 and S4 used as target in the RF sputtering system, show important difference in the PZT stoichiometry obtained which is relative to Pb (Zr0.44, Ti0.56) located in the quadratic riche phase and Pb (Zr0.52, Ti0.48) O3 near the MPB respectively.

Structural, Optical, and Electrical Properties of ZnO/Nb/ZnO Multilayer Thin Films

2014 ◽  
Vol 975 ◽  
pp. 238-242 ◽  
Author(s):  
Adolfo Henrique Nunes Melo ◽  
Petrucio Barrozo Silva ◽  
Marcelo Andrade Macedo
Keyword(s):  
Thin Films ◽  
Peak Position ◽  
Multilayer Thin Films ◽  
Optical And Electrical Properties ◽  
Zno Thin Film ◽  
Energy Band Gap ◽  
X Ray ◽  
Unit Cell Size ◽  
Vis Spectroscopy ◽  
Sputtering System

ZnO multilayers and pure ZnO thin films were deposited onto glass using a sputtering system, and were subsequently characterized by X-ray diffractometry and UV-Vis spectroscopy. The resistivity of the samples was measured by the four-probe method. All films exhibited preferential orientation along the c-axis and the peak position (002) shifted to a lower position, indicating a reduction in the unit cell size. The pure ZnO thin film exhibited a maximum transmittance of approximately 98%, which decreased as the Nb layer increased, thus increasing the absorbance of the multilayer thin films. The energy band gap decreased as the thickness of the metal increased which higher value was 3.18 eV. The resistivity had a minimum of 0.1 × 10-4 Ω m.

X-ray Diffraction Studies of Polycrystalline Thin Films Using Glancing Angle Diffractometry

1988 ◽  
Vol 32 ◽  
pp. 311-321 ◽  
Author(s):  
R.A. Larsen ◽  
T.F. McNulty ◽  
R.P. Goehner ◽  
K.R. Crystal
Keyword(s):  
Thin Films ◽  
Deep Penetration ◽  
X Ray Diffraction ◽  
Parallel Beam ◽  
X Ray ◽  
Beam Geometry ◽  
Polycrystalline Thin Films ◽  
Glancing Angle ◽  
Parallel Beam Geometry

AbstractThe use of conventional θ/2θ diffraction methods for the characterization of polycrystalline thin films is not in general a satisfactory technique due to the relatively deep penetration of x-ray photons in most materials. Glancing incidence diffraction (GID) can compensate for the penetration problems inherent in the θ/2θ geometry. Parallel beam geometry has been developed in conjunction with GID to eliminate the focusing aberrations encountered when performing these types of measurements. During the past yearwe developed a parallel beam attachment which we have successfully configured to a number of systems.

scholarly journals Partial Reduction/Re-Oxidation Processing of Y-Ba-Cu-O Sputtered Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
F.H. Garzon ◽  
J. G. Beery ◽  
D. K. Wilde ◽  
I. D. Raistrick
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Partial Reduction ◽  
Rf Power ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Residual Oxygen ◽  
Ceramic Targets ◽  
Substrate Temperatures

AbstractThin films of Y‐Ba‐Cu‐O were produced by RF sputtering of YBa2Cu3O7‐x ceramic targets, using a variety of plasma compositions, RF power levels, and substrate temperatures. Post annealing of these films in oxygen produced superconducting films with Tc values between 40‐60 K, broad transition widths and semiconductor‐like electrical behavior above Tc. Subsequent annealing at 850°C in an inert gas with a residual oxygen partial pressure of ≤10 ppm followed by an oxygen anneal produced high quality thin films: Tc> 85 K with narrow transition widths. The structure and morphology of these films during reduction‐oxidation processing were monitored using X‐ray diffraction and electron microscopy.

Stability of Nitrogen in Sputtered Iron Nitride thin films and Multilayers

1997 ◽  
Vol 475 ◽  
Author(s):  
H. Chatbi ◽  
M. Vergnat ◽  
J. F. Bobo ◽  
L. Hennet
Keyword(s):  
Thin Films ◽  
Thermal Desorption ◽  
Rf Sputtering ◽  
Iron Nitride ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermal Desorption Spectrometry

ABSTRACTDifferent phases of FeN thin films and Fe/FeN multilayers were prepared by reactive rf sputtering. The release of nitrogen and the crystallographic transformations during annealing were monitored by thermal desorption spectrometry and X-ray diffraction experiments. Finally, the diffusivity of nitrogen in the γ-Fe4N phase was evaluated.

scholarly journals Control of interfacial layer growth during deposition of high-κ oxide thin films in reactive RF-sputtering system

2017 ◽  
Vol 423 ◽  
pp. 957-960
Author(s):  
Abhishek Rakshit ◽  
Arijit Bose ◽  
Debaleen Biswas ◽  
Madhusudan Roy ◽  
Radhaballabh Bhar ◽  
...  
Keyword(s):  
Thin Films ◽  
Interfacial Layer ◽  
Rf Sputtering ◽  
Layer Growth ◽  
Oxide Thin Films ◽  
Sputtering System

The Effect of Pressure on the Microstructural Behavior on SnO2 Thin Films Deposited by RF Sputtering

2008 ◽  
Author(s):  
Mehmet Oguz Guler ◽  
Mirac Alaf ◽  
Deniz Gultekin ◽  
Hatem Akbulut ◽  
Ahmet Alp
Keyword(s):  
Thin Films ◽  
Tin Dioxide ◽  
Rf Sputtering ◽  
Transparent Conductors ◽  
Grain Structure ◽  
X Ray ◽  
Glass Substrates ◽  
Sno2 Thin Films ◽  
Steel Substrates ◽  
Gas Pressures

Tin oxide has multiple technological applications including Li-ion batteries, gas sensors, optoelectronic devices, transparent conductors and solar cells. In this study tin dioxide (SnO2) thin films were deposited on glass substrates by RF sputtering process in the oxygen (O2) and argon (Ar) plasma medium. The deposition of the thin SnO2 films was carried out by RF sputtering from SnO2 targets. Before deposition the system was evacuated to 10−4 torr vacuum level and backfilled with Ar. The deposition of the nano structured thin SnO2 films have been performed at different gas pressures. The deposition of the SnO2 was both carried out at different pure argon gas pressures and argon/oxygen mediums with varying oxygen partial pressures. The effect of argon and argon/oxygen partial gas pressures on the grain structure and film thickness were analyzed in the resultant thin films. The deposited thin films both on glass and stainless steel substrates were characterized with scanning electron microscopy (SEM), X-ray diffractometry equipped with multi purpose attachment. The grain size of the deposited layer was determined by X-ray analysis. The Atomic Force Microscopy (AFM) technique was also conducted on the some selected coatings to reveal grain structure and growth behaviors.

Characterizations of Nitrogen Doped Cupric Oxide Thin Films Deposited on Different Substrates for Solar Cell Applications

2014 ◽  
Vol 925 ◽  
pp. 469-473
Author(s):  
Poh Kok Ooi ◽  
Mohd Anas Ahmad ◽  
Sha Shiong Ng ◽  
Mat Johar Abdullah
Keyword(s):  
Thin Films ◽  
Cupric Oxide ◽  
Schottky Contact ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nitrogen Doped ◽  
Radio Frequency Sputtering ◽  
Indirect Band Gap ◽  
Sputtering System

In this work, structural, optical and electrical properties of nitrogen doped (N-doped) cupric oxide (CuO) thin films deposited on <100> orientated n-type silicon, glass and polyethylene terephthalate substrates using reactive radio frequency sputtering system were investigated. X-ray diffraction results revealed that all films exhibited monoclinic CuO(-111) and have only slightly different structural properties for various substrates. Field effect scanning electron microscopy shown N-doped CuO on Si and glass are denser than on PET substrates and all have nanotriangle-like structure morphologies. The N-doped CuO thin films have an indirect band gap of around 1.30 eV. The resistively, carrier concentration and hall mobility of the N-doped CuO thin film on glass were 1.05 kΩ.cm, 6.70 x 1014 cm-3 and 8.86 cm2/V-s respectively. Furthermore, palladium formed ohmic contact characteristics for N-doped CuO on glass and PET but exhibited schottky contact characteristics for N-doped CuO on Si.

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