Stability of Nitrogen in Sputtered Iron Nitride thin films and Multilayers

1997 ◽  
Vol 475 ◽  
Author(s):  
H. Chatbi ◽  
M. Vergnat ◽  
J. F. Bobo ◽  
L. Hennet
Keyword(s):  
Thin Films ◽  
Thermal Desorption ◽  
Rf Sputtering ◽  
Iron Nitride ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermal Desorption Spectrometry

ABSTRACTDifferent phases of FeN thin films and Fe/FeN multilayers were prepared by reactive rf sputtering. The release of nitrogen and the crystallographic transformations during annealing were monitored by thermal desorption spectrometry and X-ray diffraction experiments. Finally, the diffusivity of nitrogen in the γ-Fe4N phase was evaluated.

scholarly journals Partial Reduction/Re-Oxidation Processing of Y-Ba-Cu-O Sputtered Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
F.H. Garzon ◽  
J. G. Beery ◽  
D. K. Wilde ◽  
I. D. Raistrick
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Partial Reduction ◽  
Rf Power ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Residual Oxygen ◽  
Ceramic Targets ◽  
Substrate Temperatures

AbstractThin films of Y‐Ba‐Cu‐O were produced by RF sputtering of YBa2Cu3O7‐x ceramic targets, using a variety of plasma compositions, RF power levels, and substrate temperatures. Post annealing of these films in oxygen produced superconducting films with Tc values between 40‐60 K, broad transition widths and semiconductor‐like electrical behavior above Tc. Subsequent annealing at 850°C in an inert gas with a residual oxygen partial pressure of ≤10 ppm followed by an oxygen anneal produced high quality thin films: Tc> 85 K with narrow transition widths. The structure and morphology of these films during reduction‐oxidation processing were monitored using X‐ray diffraction and electron microscopy.

PREFERABLE ORIENTATION OF CRYSTALLINE THIN-FILM OF MODIFIED BNN SYSTEM

1989 ◽  
Vol 03 (06) ◽  
pp. 465-470 ◽  
Author(s):  
MASAYUKI TSUKIOKA ◽  
TASUKU MASHIO ◽  
MASAJI SHIMAZU ◽  
TAKESHI NAKAMURA
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Stainless Steel ◽  
Steel Substrate ◽  
Rf Sputtering ◽  
Polished Surface ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quantitative Analyses

Using rf-sputtering method, modified BNN ( Ba 2 NaNb 5 O 15) thin-films, which are highly aligned, were prepared on a polished surface of a stainless steel plate and on a polished silicon wafer. It was found that preferably aligned thin-films were successfully obtained only when modified Nb-rich BNN target was used. Preferable orientation of these thin-films was confirmed by X-ray diffraction measurement. In order to find the correlation between preferable orientation and separation from plasma center, X-ray measurement was carried out at several points on the thin-film sputtered on a long stainless steel substrate (5×100 mm ). The result indicated that preferable orientation was dominant near the position of plasma center. In order to distinguish whether the strong X-ray peak observed in the preferably aligned BNN thin-film is due to (200) peak of Nb 2 O 5 or (440) peak of BNN, X-ray measurements and the following quantitative analyses; fluorescent X-ray, ICP (Induced Coupled Radio Frequency Plasma) and an Atomic Absorption Method, were carried out for films sputtered from Nb-rich BNN target. The results reveal that the thin-films include considerable quantity of barium and sodium. This suggests that the highly aligned thin-film is composed of modified BNN and not Nb 2 O 5.

The Calcination Temperature Effect on the Phase Formation of the PZT Ceramic: How the same Calcination Temperature, Result in Different Phase’s Formation

2021 ◽  
Vol 406 ◽  
pp. 256-264
Author(s):  
Mohammed Mahdi ◽  
M. Kadri
Keyword(s):  
Thin Films ◽  
Calcination Temperature ◽  
Relative Intensity ◽  
Molar Mass ◽  
Rf Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metallic Oxides ◽  
Xrd Patterns ◽  
Sputtering System

First, the metallic oxides of PbO, TiO2 and ZrO2 were mixed following (2, 1, 1) molar mass respectively. Then 4 samples were separated (S1, S2, S3 and S4). the first one S1 was subjected to calcination treatments at 600, 700 and 800 °C however, the S2 was treated at 700 °C only, the S3 at 800 °C and S4 at 850 °C. The X ray diffraction of the samples reveals important difference in the phases obtained, at 600 °C the quadratic riche phase of PbTiO3 was mainly observed on sample S1, after the treatment at 700 °C and 800°C, the same XRD patterns were obtained with the same peaks positions and the relative intensity. However the S2 revels different pattern from S1 at 700 °C relative to the formation of the Pb(Zr0.75, Ti0.25)O3 Rhombohedral riche phase. The S3 XRD results reveal also different pattern from S1 at 800 °C relative to the formation of Pb (Zr0.58, Ti0.42) O3 near the Morphotropic phase boundary (MPB) and the S4 confirm these finding. Thin films grown from the S1 and S4 used as target in the RF sputtering system, show important difference in the PZT stoichiometry obtained which is relative to Pb (Zr0.44, Ti0.56) located in the quadratic riche phase and Pb (Zr0.52, Ti0.48) O3 near the MPB respectively.

Microstructure and Thermal Features of a-Si:H and nc-Si:H Thin Films Produced by Rf Sputtering

2006 ◽  
Vol 514-516 ◽  
pp. 23-27
Author(s):  
V. Thaiyalnayaki ◽  
M.Fátima Cerqueira ◽  
Francisco Macedo ◽  
João Alves Ferreira
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Thermal Properties ◽  
Rf Sputtering ◽  
Nanocrystalline Silicon ◽  
Transport Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Silicon Thin Films ◽  
Thermal Features

Amorphous and nanocrystalline silicon thin films have been produced by reactive r.f. sputtering and their microstructure, optical and thermal properties were evaluated. A good correlation was found between the microstructure determined by Raman spectroscopy and X- ray diffraction and the thermal transport parameters.

Chemical Stability of Vb2 and ZrB2 with Aluminum

1990 ◽  
Vol 181 ◽  
Author(s):  
L. E. Halperin ◽  
E. Kolawa ◽  
Z. Fu ◽  
M-A. Nicolet
Keyword(s):  
Thin Films ◽  
Chemical Stability ◽  
Rf Sputtering ◽  
Heat Of Reaction ◽  
Reaction Products ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Crystallization Reaction ◽  
Exothermic Chemical Reaction

ABSTRACTThe chemical stability of boride thin films with aluminum is investigated. Only two diborides, VB2 and HfB2 have a positive heat of reaction which makes them potential candidates for thermodynamically stable diffusion barriers between Al and Si. Thin films of VB2, and ZrB2 for comparison, prepared by rf sputtering of composite targets were chosen for this study. Multilayer samples of these borides and aluminum were investigated by differential scanning calorimetry to determine if, according to calculations, a reaction between Al and the borides takes place, and to measure the heat of reaction. We find that an exothermic chemical reaction occurs between ZrB2 and Al and that an exothermic crystallization reaction takes place in the VB2 and Al sample. The reaction products were determined using X-ray diffraction.

Physical Characterization of Thin Films of Lithium Niobate Deposited on Silicon Substrates

1990 ◽  
Vol 200 ◽  
Author(s):  
Robert C. Baumann ◽  
Timothy A. Rost ◽  
Thomas A. Rabson
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Depth Profiling ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface Optical ◽  
Auger Electron Spectroscopy Depth ◽  
Deposition Conditions

ABSTRACTThin films (.1-.6 μm) of LiNbO3 have been deposited on silicon substrates by reactive rf sputtering. Under optimized deposition conditions the resulting thin films of LiNbO3 were optically transparent, adhered well to the silicon substrates, and were found to be polycrystalline and uniaxial with the c axis oriented normal to the silicon surface. Optical microscopy and scanning electron microscopy were used to examine film morphology. Both methods indicated that the films were smooth and contained no gross irregularities. The ratio of oxygen to niobium in these films was measured by Rutherford backscattering to be approximately 3 to 1. Auger electron spectroscopy depth profiling revealed that the films had the expected ratio of Li, Nb, and O. This information, together with Bragg x-ray diffraction data, indicates that the thin films deposited on silicon were stoichiometric, crystalline LiNbO3.

Synthesis and Characterization of Copper-Iron Nitride Thin Films

MRS Advances ◽  
2015 ◽  
Vol 1 (3) ◽  
pp. 203-208 ◽  
Author(s):  
Hrishikesh Kamat ◽  
Xingwu Wang ◽  
James Parry ◽  
Yueling Qin ◽  
Hao Zeng
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Iron Nitride ◽  
X Ray Diffraction ◽  
Copper Nitride ◽  
X Ray ◽  
Structure Morphology ◽  
Layer Stacking ◽  
Potential Applications

ABSTRACTIron nitride thin films have potential applications in the biomedicine and energy. The magnetic properties of these films can be tuned by incorporating copper nitride. In this study, iron copper nitride thin films have been fabricated by magnetron sputtering technique either by co-sputtering iron nitride and copper nitride or by layer stacking of the materials. The structure, morphology and magnetic properties of the films have been studied by scanning electron microscopy, x-ray diffraction, x-ray reflectivity and vibrating sample magnetometry.

scholarly journals Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates

2021 ◽  
Vol 127 (10) ◽  
Author(s):  
Somayeh Asgary ◽  
Elnaz Vaghri ◽  
Masoumeh Daemi ◽  
Parisa Esmaili ◽  
Amir H. Ramezani ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Sputtering Power ◽  
Microstructural Surface ◽  
Deposited Films

AbstractIn this research, aluminum (Al) thin films were deposited on SiO2/Si substrates using RF magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphologies. Different sputtering RF powers (100–400 W) were employed to form Al thin films. The characteristics of deposited Al thin films are investigated using X-ray diffraction pattern (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Fourier-transforms infrared (FTIR) spectroscopy. The X-ray diffraction (XRD) results demonstrate that the deposited films in low sputtering power have amorphous nature. By increasing the sputtering power, crystallization is observed. AFM analysis results show that the RF power of 300 W is the optimum sputtering power to grow the smoothest Al thin films. FTIR results show that the varying RF power affect the chemical structure of the deposited films. The SEM results show that by increasing the sputtering power leads to the formation of isolated texture on the surface of substrate. In conclusion, RF power has a significant impact on the properties of deposited films, particularly crystallization and shape.

The Effect of Annealing Temperature on the Opt-Electric Properties of Ti:GZO Transparent Conducting OxidesThin Film

2013 ◽  
Vol 284-287 ◽  
pp. 324-328
Author(s):  
Tao Hsing Chen ◽  
Tzu Yu Liao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Corning Glass ◽  
Conductive Film ◽  
Corning Glass Substrate

This study utilizes radio frequency magnetron sputtering(RF-sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate, then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperature is 300, 500 and 550°C, respectively. Moreover, the effects of process parameters on resistivity and optical properties are investigated. The deposited rate, microstructure, thickness and Optical transmission of Ti:GZO thin film are performed. For example, the thicknesses of films were determined by -step profilometer. The crystalline characteristics of thin films were investigated by X-ray diffraction (XRD). Ga and Ti concentration in ZnO film were determined by energy dispersive X-ray spectroscopy (EDS). The electrical properties of the Ti:GZO thin films were measured by Four point probe. The optical properties of Ti:GZO thin films were examined using UV–vis spectrophotometer. The results show that the transmittance of Ti:GZO thin film exhibited an excellent transparency in the visible light field. The resistivity of Ti:GZO decrease with increasing annealing temperature.

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