Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory

MRS Advances ◽  
2016 ◽  
Vol 1 (49) ◽  
pp. 3373-3378
Author(s):  
Kentaro Kinoshita ◽  
Ryosuke Koishi ◽  
Takumi Moriyama ◽  
Kouki Kawano ◽  
Hidetoshi Miyashita ◽  
...  
Keyword(s):  
Electric Field ◽  
Resistive Switching ◽  
Driving Force ◽  
Oxygen Vacancies ◽  
Driving Forces ◽  
Random Access ◽  
Experimental Fact ◽  
Switching Speed ◽  
Set Switching ◽  
Field Drift

ABSTRACTIt is widely received that resistive switching in electrode (EL)/metal oxide (MO)/EL cell is caused by formation and rupture of a conductive filament (CF) consisting of oxygen vacancies, VO’s. However, driving forces that migrate VO’s are not elucidated yet. Considering an experimental fact that good data endurance more than 106 cycles is often observed, an isotropic driving force that gathers oxygen vacancies and form a CF for set switching is required instead of an electric field drift that is widely received as the driving force of set switching.In this paper, we reexamined driving forces and succeeded in reproducing pulse response data for wide rise time, trise, range by simulating VO migration assuming Fick and Soret diffusion, without including the electric-field drift. Therefore, it was suggested that controlling T distribution considering the waveforms of write/erase pulses and the thermodynamic parameters of ELs as well as MO is crucial for the optimization of switching speed of ReRAM.

scholarly journals The influences of electric field intensity and driving force on the slip behaviour of water flow in a nanochannel

PLoS ONE ◽  
2021 ◽  
Vol 16 (9) ◽  
pp. e0257589
Author(s):  
Qiwei Liu ◽  
Dezheng Wang ◽  
Miao Yu ◽  
Biao Cong ◽  
Xiaopeng Yu
Keyword(s):  
Electric Field ◽  
Field Intensity ◽  
Liquid Water ◽  
Driving Force ◽  
Electric Field Intensity ◽  
Driving Forces ◽  
Slip Length ◽  
Main Peak ◽  
Static Structure Factor ◽  
Static Structure

In the present work, non-equilibrium molecular dynamics (MD) simulations are used to investigate the flow of liquid water between two metallic solid atomistic smooth walls. The present work focuses on the combined effect of external electric field and driving force on the slip behaviour and structure of liquid water at the solid-water interface. The upper wall of the set model is positively charged, and the lower wall of the model is negatively charged. The simulation results show that as the driving force increases, the slip length also increases. At a given driving force, no matter how the electric field intensity changes, there is almost no change in the slip length, so the slip length is independent of the electric field strength. In addition, the results found that there is a linear relationship between the slip length and the normalised main peak of the static structure factor under different driving forces.

scholarly journals Multilevel Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Application

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1228 ◽  
Author(s):  
Dong Keun Lee ◽  
Min-Hwi Kim ◽  
Suhyun Bang ◽  
Tae-Hyeon Kim ◽  
Sungjun Kim ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Circuit Simulation ◽  
Random Access ◽  
Ammonium Hydroxide ◽  
Successful Implementation ◽  
Resistive State ◽  
Set Switching ◽  
Switching Characteristics ◽  
Line Resistance

In this research, nano-wedge resistive switching random-access memory (ReRAM) based on a Si3N4 switching layer and silicon bottom electrode was fabricated, and its multilevel switching characteristics were investigated. The wedge bottom electrode was formed by a tetramethyl ammonium hydroxide (TMAH) wet-etching process. The nano-wedge ReRAM was demonstrated to have different reset current levels by varying the compliance currents. To explain the effect of modulating the compliance currents, the switching characteristics of both the SET and RESET behaviors were shown. After measuring the device under four different compliance currents, it was proved to have different current levels due to an inhibited resistive state after a SET switching process. Furthermore, SPICE circuit simulation was carried out to show the effect of line resistance on current summation for the array sizes of 8 × 8 and 16 × 16. These results indicate the importance of minimizing the line resistance for successful implementation as a hardware-based neural network.

Electric field control of resistive switching and magnetization in epitaxial LaBaCo2O5+δ thin films

2019 ◽  
Vol 21 (17) ◽  
pp. 8843-8848 ◽  
Author(s):  
Jamal Shaibo ◽  
Rui Yang ◽  
Zhe Wang ◽  
He-Ming Huang ◽  
Jue Xiong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Bond Length ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Electrical Field ◽  
External Electrical Field ◽  
Field Control

Resistive switching and magnetization in epitaxial LaBaCo2O5+δ films can be controlled through an external electrical field, and the switching is related to the tuning of oxygen vacancies and the Co–O–Co bond length.

scholarly journals Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride

2020 ◽  
Vol 10 (10) ◽  
pp. 3506
Author(s):  
Nayan C. Das ◽  
Se-I Oh ◽  
Jarnardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Charge Trapping ◽  
High Resistance State ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Silicon Oxynitride ◽  
Set Switching ◽  
Resistance State ◽  
Switching Characteristics

Resistive random-access memory (RRAM) devices are fabricated by utilizing silicon oxynitride (SiOxNy) thin film as a resistive switching layer. A SiOxNy layer is deposited on a p+-Si substrate and capped with a top electrode consisting of Au/Ni. The SiOxNy-based memory device demonstrates bipolar multilevel operation. It can switch interchangeably between all resistance states, including direct SET switching from a high-resistance state (HRS) to an intermediate-resistance state (IRS) or low-resistance state (LRS), direct RESET switching process from LRS to IRS or HRS, and SET/RESET switching from IRS to LRS or HRS by controlling the magnitude of the applied write voltage signal. The device also shows electroforming-free ternary nonvolatile resistive switching characteristics having RHRS/RIRS > 10, RIRS/RLRS > 5, RHRS/RLRS > 103, and retention over 1.8 × 104 s. The resistive switching mechanism in the devices is found to be combinatory processes of hopping conduction by charge trapping/detrapping in the bulk SiOxNy layer and filamentary switching mode at the interface between the SiOxNy and Ni layers.

scholarly journals Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3330
Author(s):  
Zhenzhong Zhang ◽  
Fang Wang ◽  
Kai Hu ◽  
Yu She ◽  
Sannian Song ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Chemical Vapor ◽  
Response Speed ◽  
Resistive Random Access Memory ◽  
Fast Response ◽  
Electrical Performance ◽  
Pressure Chemical

In order to improve the electrical performance of resistive random access memory (RRAM), sulfur (S)-doping technology for HfOx-based RRAM is systematically investigated in this paper. HfOx films with different S-doping contents are achieved by atmospheric pressure chemical vapor deposition (APCVD) under a series of preparation temperatures. The effect of S on crystallinity, surface topography, element composition of HfOx thin films and resistive switching (RS) performance of HfOx-based devices are discussed. Compared with an undoped device, the VSET/VRESET of the S-doped device with optimal S content (~1.66 At.%) is reduced, and the compliance current (Icc) is limited from 1 mA to 100 μA. Moreover, it also has high uniformity of resistance and voltage, stable endurance, good retention characteristics, fast response speed (SET 6.25 μs/RESET 7.50 μs) and low energy consumption (SET 9.08 nJ/RESET 6.72 nJ). Based on X-ray photoelectron spectroscopy (XPS) data and fitting of the high/low resistance state (HRS/LRS) conduction behavior, a switching mechanism is considered to explain the formation and rupture of conductive filaments (CFs) composed of oxygen vacancies in undoped and S-doped HfOx-based devices. Doping by sulfur is proposed to introduce the appropriate concentration oxygen vacancies into HfOx film and suppress the random formation of CFs in HfOx-based device, and thus improve the performance of the TiN/HfOx/ITO device.

Microscopic Driving Forces For Electromigration

1996 ◽  
Vol 427 ◽  
Author(s):  
Richard S. Sorbello
Keyword(s):  
Electron Transport ◽  
Electric Field ◽  
Local Field ◽  
Driving Force ◽  
Driving Forces ◽  
Local Heating ◽  
Local Electric Field ◽  
Electron Current ◽  
Defect Migration ◽  
Theoretical Results

AbstractElectromigration in metals is due to microscopic forces acting on mobile defects. These microscopic forces arise from the local electric field that accompanies electron transport, and the resulting defect migration is a consequence of the dynamic response of the defect to this local field. Theoretical results are given for the local electric field and the electromigration driving force on impurities in bulk systems and in metallic microstructures where surfaces, grain boundaries and dislocations play an important role. Extensions of the theory are described for mesoscopic systems, and local heating is shown to be an important effect as the size of the system becomes smaller and the electron current is larger.

Correlation between Filament Distribution and Resistive Switching Property in Binary-Transition-Metal-Oxide Based Resistive Random Access Memory.

2012 ◽  
Vol 1406 ◽  
Author(s):  
H. Tanaka ◽  
K. Kinoshita ◽  
M. Yoshihara ◽  
S. Kishida
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Memory Cell ◽  
Resistive Random Access Memory ◽  
Voltage Distribution ◽  
Access Memory ◽  
Switching Model ◽  
Set Switching ◽  
Simulation Based ◽  
Switching Property

ABSTRACTLarge variation in basic memory properties is a serious issue that hinders the practical use of ReRAM. This study revealed that one of the main factors causing variation is the presence of multiple filaments which have distinct set voltages in each memory cell. An operating filament switches to another filament having the smallest set voltage at each instant of switching. We propose a resistive switching model that takes the presence of multiple filaments into consideration. A Monte Carlo simulation based on the resistive switching model reproduces the set voltage distribution. Improvement of accuracy of the simulation can be also expected considering the fact that Vset increases at a certain probability at each instant of set switching.

A ferroelectric memristor based on the migration of oxygen vacancies

RSC Advances ◽  
2016 ◽  
Vol 6 (59) ◽  
pp. 54113-54118 ◽  
Author(s):  
Pengfei Hou ◽  
Jinbin Wang ◽  
Xiangli Zhong ◽  
Yuexian Wu
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Multilevel Storage ◽  
Non Destructive ◽  
Switching Memory

Ferroelectric resistive switching memory is a non-destructive and easy to achieve multilevel storage, which is a breakthrough for further improving the density in the random access memory.

scholarly journals Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2705
Author(s):  
He-Chun Zhou ◽  
Yan-Ping Jiang ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Wen-Hua Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Sol Gel ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Bipolar Resistive Switching ◽  
Factors Affecting ◽  
Sol Gel Process ◽  
Switching Characteristics

Herein, Bi4Ti3O12 (BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO3/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characteristics of the device are first reported in this work. The switching ratio of the device annealed in air reached approximately 102 at 0.1 and −0.1 V. The RS performance was not significantly degraded after 100 consecutive cycles of testing. We also explored the factors affecting the RS behavior of the device. By investigating the RS characteristics of the devices annealed in O2, and in combination with XPS analysis, we found that the RS properties were closely related to the presence of oxygen vacancies. The devices annealed in air exhibited a markedly improved RS effect over those annealed in O2. According to the slope fitting, the conduction mechanism of the device was the ohmic conduction and space charge limited current (SCLC). This study is the first to successfully apply BIT ferroelectric films to the RS layers of memristors. Additionally, a theory of conductive filaments is proposed to adequately explain the relationship between RS behavior and oxygen vacancies, providing meaningful inspiration for designing high-quality resistive random access memory devices.

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