scholarly journals Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3330
Author(s):  
Zhenzhong Zhang ◽  
Fang Wang ◽  
Kai Hu ◽  
Yu She ◽  
Sannian Song ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Chemical Vapor ◽  
Response Speed ◽  
Resistive Random Access Memory ◽  
Fast Response ◽  
Electrical Performance ◽  
Pressure Chemical

In order to improve the electrical performance of resistive random access memory (RRAM), sulfur (S)-doping technology for HfOx-based RRAM is systematically investigated in this paper. HfOx films with different S-doping contents are achieved by atmospheric pressure chemical vapor deposition (APCVD) under a series of preparation temperatures. The effect of S on crystallinity, surface topography, element composition of HfOx thin films and resistive switching (RS) performance of HfOx-based devices are discussed. Compared with an undoped device, the VSET/VRESET of the S-doped device with optimal S content (~1.66 At.%) is reduced, and the compliance current (Icc) is limited from 1 mA to 100 μA. Moreover, it also has high uniformity of resistance and voltage, stable endurance, good retention characteristics, fast response speed (SET 6.25 μs/RESET 7.50 μs) and low energy consumption (SET 9.08 nJ/RESET 6.72 nJ). Based on X-ray photoelectron spectroscopy (XPS) data and fitting of the high/low resistance state (HRS/LRS) conduction behavior, a switching mechanism is considered to explain the formation and rupture of conductive filaments (CFs) composed of oxygen vacancies in undoped and S-doped HfOx-based devices. Doping by sulfur is proposed to introduce the appropriate concentration oxygen vacancies into HfOx film and suppress the random formation of CFs in HfOx-based device, and thus improve the performance of the TiN/HfOx/ITO device.

scholarly journals Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process

Metals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 772
Author(s):  
Seunghyun Kim ◽  
Osung Kwon ◽  
Hojeong Ryu ◽  
Sungjun Kim
Keyword(s):  
Resistive Switching ◽  
Silicon Substrate ◽  
Photoelectron Spectroscopy ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Alloy Type ◽  
Switching Type ◽  
Neuromorphic System ◽  
Device Properties ◽  
Partial Reset

This work demonstrates the synaptic properties of the alloy-type resistive random-access memory (RRAM). We fabricated the HfAlOx-based RRAM for a synaptic device in a neuromorphic system. The deposition of the HfAlOx film on the silicon substrate was verified by X-ray photoelectron spectroscopy (XPS) analysis. It was found that both abrupt and gradual resistive switching could be implemented, depending on the reset stop voltage. In the reset process, the current gradually decreased at weak voltage, and at strong voltage, it tended to decrease rapidly by Joule heating. The type of switching determined by the first reset process was subsequently demonstrated to be stable switching by successive set and reset processes. A gradual switching type has a much smaller on/off window than abrupt switching. In addition, retention maintained stability up to 2000 s in both switching cases. Next, the multiple current states were tested in the gradual switching case by identical pulses. Finally, we demonstrated the potentiation and depression of the Cu/HfAlOx/Si device as a synapse in an artificial neural network and confirmed that gradual resistive switching was suitable for artificial synapses, using neuromorphic system simulation.

scholarly journals Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2705
Author(s):  
He-Chun Zhou ◽  
Yan-Ping Jiang ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Wen-Hua Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Sol Gel ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Bipolar Resistive Switching ◽  
Factors Affecting ◽  
Sol Gel Process ◽  
Switching Characteristics

Herein, Bi4Ti3O12 (BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO3/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characteristics of the device are first reported in this work. The switching ratio of the device annealed in air reached approximately 102 at 0.1 and −0.1 V. The RS performance was not significantly degraded after 100 consecutive cycles of testing. We also explored the factors affecting the RS behavior of the device. By investigating the RS characteristics of the devices annealed in O2, and in combination with XPS analysis, we found that the RS properties were closely related to the presence of oxygen vacancies. The devices annealed in air exhibited a markedly improved RS effect over those annealed in O2. According to the slope fitting, the conduction mechanism of the device was the ohmic conduction and space charge limited current (SCLC). This study is the first to successfully apply BIT ferroelectric films to the RS layers of memristors. Additionally, a theory of conductive filaments is proposed to adequately explain the relationship between RS behavior and oxygen vacancies, providing meaningful inspiration for designing high-quality resistive random access memory devices.

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

2008 ◽  
Vol 93 (22) ◽  
pp. 223505 ◽  
Author(s):  
Jung Won Seo ◽  
Jae-Woo Park ◽  
Keong Su Lim ◽  
Ji-Hwan Yang ◽  
Sang Jung Kang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Resistive Switching Characteristics in TiO2 ReRAM with Top Electrode of Co Selectively Formed on SAMs Printed Patterns

2007 ◽  
Vol 124-126 ◽  
pp. 603-606
Author(s):  
Sang Hee Won ◽  
Seung Hee Go ◽  
Jae Gab Lee
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Atomic Layer ◽  
High Resistance State ◽  
Resistive Random Access Memory ◽  
Tio2 Thin Films ◽  
Selective Deposition ◽  
Precise Control ◽  
Resistance State ◽  
Switching Characteristics

Simple process for the fabrication of Co/TiO2/Pt resistive random access memory, called ReRAM, has been developed by selective deposition of Co on micro-contact printed (μ-CP) self assembled monolayers (SAMs) patterns. Atomic Layer Deposition (ALD) was used to deposit TiO2 thin films, showing its ability of precise control over the thickness of TiO2, which is crucial to obtain proper resistive switching properties of TiO2 ReRAM. The fabrication process for Co/TiO2/Pt ReRAM involves the ALD of TiO2 on sputter-deposited Pt bottom electrode, followed by μ-CP with SAMs and then selective deposition of Co. This results in the Co/TiO2/Pt structure ReRAM. For comparison, Pt/TiO2/Pt ReRAM was produced and revealing the similar switching characteristics as that of Co/TiO2/Pt, thus indicating the feasibility of Co replacement with Pt top electrode. The ratios between the high-resistance state (Off state) and the low-resistance state (On state) were larger than 102. Consequently, the selective deposition of Co with μ-CP, newly developed in this study, can simplify the process and thus implemented into the fabrication of ReRAM.

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

Reliable analog resistive switching behaviors achieved using memristive devices in AlOx/HfOx bilayer structure for neuromorphic systems

2021 ◽  
Author(s):  
Meng Qi ◽  
Tianquan Fu ◽  
Huadong Yang ◽  
ye tao ◽  
Chunran Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Learning Experience ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Spike Timing ◽  
Information Storage ◽  
Bilayer Structure ◽  
Neuromorphic Computing ◽  
Von Neumann ◽  
Simulation Based

Abstract Human brain synaptic memory simulation based on resistive random access memory (RRAM) has an enormous potential to replace traditional Von Neumann digital computer thanks to several advantages, including its simple structure, high-density integration, and the capability to information storage and neuromorphic computing. Herein, the reliable resistive switching (RS) behaviors of RRAM are demonstrated by engineering AlOx/HfOx bilayer structure. This allows for uniform multibit information storage. Further, the analog switching behaviors are capable of imitate several synaptic learning functions, including learning experience behaviors, short-term plasticity-long-term plasticity transition, and spike-timing-dependent-plasticity (STDP). In addition, the memristor based on STDP learning rules are implemented in image pattern recognition. These results may offer a promising potential of HfOx-based memristors for future information storage and neuromorphic computing applications.

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