Microscopic Driving Forces For Electromigration

1996 ◽  
Vol 427 ◽  
Author(s):  
Richard S. Sorbello
Keyword(s):  
Electron Transport ◽  
Electric Field ◽  
Local Field ◽  
Driving Force ◽  
Driving Forces ◽  
Local Heating ◽  
Local Electric Field ◽  
Electron Current ◽  
Defect Migration ◽  
Theoretical Results

AbstractElectromigration in metals is due to microscopic forces acting on mobile defects. These microscopic forces arise from the local electric field that accompanies electron transport, and the resulting defect migration is a consequence of the dynamic response of the defect to this local field. Theoretical results are given for the local electric field and the electromigration driving force on impurities in bulk systems and in metallic microstructures where surfaces, grain boundaries and dislocations play an important role. Extensions of the theory are described for mesoscopic systems, and local heating is shown to be an important effect as the size of the system becomes smaller and the electron current is larger.

scholarly journals The influences of electric field intensity and driving force on the slip behaviour of water flow in a nanochannel

PLoS ONE ◽  
2021 ◽  
Vol 16 (9) ◽  
pp. e0257589
Author(s):  
Qiwei Liu ◽  
Dezheng Wang ◽  
Miao Yu ◽  
Biao Cong ◽  
Xiaopeng Yu
Keyword(s):  
Electric Field ◽  
Field Intensity ◽  
Liquid Water ◽  
Driving Force ◽  
Electric Field Intensity ◽  
Driving Forces ◽  
Slip Length ◽  
Main Peak ◽  
Static Structure Factor ◽  
Static Structure

In the present work, non-equilibrium molecular dynamics (MD) simulations are used to investigate the flow of liquid water between two metallic solid atomistic smooth walls. The present work focuses on the combined effect of external electric field and driving force on the slip behaviour and structure of liquid water at the solid-water interface. The upper wall of the set model is positively charged, and the lower wall of the model is negatively charged. The simulation results show that as the driving force increases, the slip length also increases. At a given driving force, no matter how the electric field intensity changes, there is almost no change in the slip length, so the slip length is independent of the electric field strength. In addition, the results found that there is a linear relationship between the slip length and the normalised main peak of the static structure factor under different driving forces.

Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory

MRS Advances ◽  
2016 ◽  
Vol 1 (49) ◽  
pp. 3373-3378
Author(s):  
Kentaro Kinoshita ◽  
Ryosuke Koishi ◽  
Takumi Moriyama ◽  
Kouki Kawano ◽  
Hidetoshi Miyashita ◽  
...  
Keyword(s):  
Electric Field ◽  
Resistive Switching ◽  
Driving Force ◽  
Oxygen Vacancies ◽  
Driving Forces ◽  
Random Access ◽  
Experimental Fact ◽  
Switching Speed ◽  
Set Switching ◽  
Field Drift

ABSTRACTIt is widely received that resistive switching in electrode (EL)/metal oxide (MO)/EL cell is caused by formation and rupture of a conductive filament (CF) consisting of oxygen vacancies, VO’s. However, driving forces that migrate VO’s are not elucidated yet. Considering an experimental fact that good data endurance more than 106 cycles is often observed, an isotropic driving force that gathers oxygen vacancies and form a CF for set switching is required instead of an electric field drift that is widely received as the driving force of set switching.In this paper, we reexamined driving forces and succeeded in reproducing pulse response data for wide rise time, trise, range by simulating VO migration assuming Fick and Soret diffusion, without including the electric-field drift. Therefore, it was suggested that controlling T distribution considering the waveforms of write/erase pulses and the thermodynamic parameters of ELs as well as MO is crucial for the optimization of switching speed of ReRAM.

High-performance near-infrared photodetectors based on C3N quantum dots integrated with single-crystal graphene

2021 ◽  
Author(s):  
Yun Zhao ◽  
Xiaoqiang Feng ◽  
Menghan Zhao ◽  
Xiaohu Zheng ◽  
Zhiduo Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Single Crystal ◽  
High Performance ◽  
Near Infrared ◽  
Fast Response ◽  
Local Electric Field ◽  
Infrared Photodetectors ◽  
Photocurrent Response

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.

scholarly journals Driving forces on dislocations: finite element analysis in the context of the non-singular dislocation theory

2021 ◽  
Author(s):  
Xiandong Zhou ◽  
Christoph Reimuth ◽  
Peter Stein ◽  
Bai-Xiang Xu
Keyword(s):  
Finite Element ◽  
Dislocation Loop ◽  
Driving Force ◽  
Complex Geometry ◽  
Driving Forces ◽  
Singular Solutions ◽  
Dislocation Model ◽  
Configurational Force ◽  
Element Analysis ◽  
Dislocation Configuration

AbstractThis work presents a regularized eigenstrain formulation around the slip plane of dislocations and the resultant non-singular solutions for various dislocation configurations. Moreover, we derive the generalized Eshelby stress tensor of the configurational force theory in the context of the proposed dislocation model. Based on the non-singular finite element solutions and the generalized configurational force formulation, we calculate the driving force on dislocations of various configurations, including single edge/screw dislocation, dislocation loop, interaction between a vacancy dislocation loop and an edge dislocation, as well as a dislocation cluster. The non-singular solutions and the driving force results are well benchmarked for different cases. The proposed formulation and the numerical scheme can be applied to any general dislocation configuration with complex geometry and loading conditions.

scholarly journals Electric Field Induced Biomimetic Transmembrane Electron Transport Using Carbon Nanotube Porins

Small ◽  
2021 ◽  
pp. 2102517
Author(s):  
Jacqueline M. Hicks ◽  
Yun‐Chiao Yao ◽  
Sydney Barber ◽  
Nigel Neate ◽  
Julie A. Watts ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Electron Transport ◽  
Electric Field ◽  
Transmembrane Electron Transport

Synergistic effects of nonmetal co-doping with sulfur in anatase TiO2: a DFT + U study

2015 ◽  
Vol 17 (5) ◽  
pp. 3426-3434 ◽  
Author(s):  
Qing-Lu Liu ◽  
Zong-Yan Zhao ◽  
Qing-Ju Liu
Keyword(s):  
Electric Field ◽  
Synergistic Effects ◽  
Anatase Tio2 ◽  
Local Electric Field ◽  
Energy Bands ◽  
Deep Impurity ◽  
Co Doping

S + NM co-doping could induce a stronger local electric field and eliminate the deep impurity energy bands of S mono-doped TiO2.

BICOLOR OPTICAL TREATMENT OF MULTI-LAYERS FILM SAMPLES

2010 ◽  
Vol 24 (08) ◽  
pp. 937-942 ◽  
Author(s):  
K. OZGA ◽  
J. EBOTHÉ ◽  
H. NGUYEN CONG ◽  
D. MARTEL ◽  
W. GRUHN ◽  
...  
Keyword(s):  
Electric Field ◽  
Power Density ◽  
Local Heating ◽  
Independent Measurement ◽  
Yag Lasers ◽  
Optical Susceptibility ◽  
Dc Electric Field ◽  
Optical Treatment ◽  
532 Nm ◽  
Multi Layer Film

In the present paper, we study the influence of simultaneous polarized optical treatment (10 ns Nd: YAG lasers with wavelengths 1064 nm and 532 nm with power density 0.6 GW/cm2) together with electrostatic dc electric field (up to 8 kV/cm) on self-assembled multi-layer film samples. The second-order optical susceptibility (SOS) achieves the maximal values after one minute simultaneous dc electrical-optical treatment. Further treatment will not enhance the values and even leads to the decrease of SOS. The independent measurement of the local temperature shows that local heating does not exceed 10.1 K.

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