Characterization of Silicon Surface Contamination and Near‐Surface Damage Caused by  C 2 F 6 /  CHF 3 Reactive Ion Etching

1990 ◽  
Vol 137 (8) ◽  
pp. 2634-2639 ◽  
Author(s):  
Sun Jin Yun ◽  
Seong‐Ju Park ◽  
Mun‐Cheol Paek ◽  
Jeong Y. Lee
Keyword(s):  
Silicon Surface ◽  
Reactive Ion Etching ◽  
Surface Damage ◽  
Surface Contamination ◽  
Ion Etching ◽  
Near Surface

Near‐Surface Damage and Contamination after  CF 4 /  H 2 Reactive Ion Etching of Si

1985 ◽  
Vol 132 (6) ◽  
pp. 1441-1447 ◽  
Author(s):  
G. S. Oehrlein ◽  
R. M. Tromp ◽  
J. C. Tsang ◽  
Y. H. Lee ◽  
E. J. Petrillo
Keyword(s):  
Reactive Ion Etching ◽  
Surface Damage ◽  
Ion Etching ◽  
Near Surface

Silicon near-surface damage induced by reactive ion etching

1987 ◽  
Vol 45 ◽  
pp. 244-245
Author(s):  
S. J. Jeng ◽  
G. S. Oehrlein
Keyword(s):  
Silicon Oxide ◽  
Reactive Ion Etching ◽  
Complete Removal ◽  
Surface Damage ◽  
High Resolution Electron Microscopy ◽  
Ion Etching ◽  
Near Surface ◽  
Ion Channeling ◽  
Resolution Electron ◽  
Polysilicon Films

Reactive ion etching (RIE) is an anisotropic etching process which has been used to etch silicon oxide, silicon nitride and polysilicon films. Due to the nonuniformities of etch rate and film thickness, overetching is often required to ensure the complete removal of these films. Previous X-ray photoemission spectroscopy (XPS), He ion channeling, nuclear reaction profiling, Raman scattering and ellipsometry studies have indicated the presence of a fluorocarbon film (30-40 Å) on Si, a heavily disordered layer (∼30 Å) and the etching gas related impurity implantation region (∼250 Å) underneath the Si surface caused by CF4/x% H2 (0≤x≤40) reactive ion etching. In the present investigation, high resolution electron microscopy (HREM) is used to study the structures and distribution of lattice defects in the heavily disordered region. Particular attention is paid to the effects of overetch time and hydrogen addition to CF4 etching gas on Si near-surface damage structures.

Reactive Ion Etching Induced Surface Damage of Silicon Carbide

2005 ◽  
Vol 483-485 ◽  
pp. 765-768 ◽  
Author(s):  
Jun Hai Xia ◽  
E. Rusli ◽  
R. Gopalakrishnan ◽  
S.F. Choy ◽  
Chin Che Tin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Reactive Ion Etching ◽  
Surface Damage ◽  
Textured Surface ◽  
Rf Power ◽  
Power Devices ◽  
Ion Etching ◽  
Maximum Value ◽  
Wide Range ◽  
Coarse Surface

Reactive ion etching of SiC induced surface damage, e.g., micromasking effect induced coarse and textured surface, is one of the main concerns in the fabrication of SiC based power devices [1]. Based on CHF3 + O2 plasma, 4H-SiC was etched under a wide range of RF power. Extreme coarse and textured etched surfaces were observed under certain etching conditions. A super-linear relationship was found between the surface roughness and RF power when the latter was varied from 40 to 160 W. A further increase in the RF power to 200 W caused the surface roughness to drop abruptly from its maximum value of 182.4 nm to its minimum value of 1.3 nm. Auger electron spectroscopy (AES) results revealed that besides the Al micromasking effect, the carbon residue that formed a carbon-rich layer, could also play a significant role in affecting the surface roughness. Based on the AES results, an alternative explanation on the origin of the coarse surface is proposed.

Study of near-surface disorder and surface residues after reactive Ion etching of Silicon

1986 ◽  
Vol 9 (5) ◽  
pp. 275-281 ◽  
Author(s):  
G. S. Oehrlein ◽  
G. J. Coyle ◽  
J. G. Clabes ◽  
Y. H. Lee
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Near Surface ◽  
Surface Disorder

Effects of Post Etch Treatments on Contaminated Silicon Surface Due to Chf3/C2F6 Reactive ion Etching

1993 ◽  
Vol 315 ◽  
Author(s):  
H.-H. Park ◽  
K.-H. Kwon ◽  
S.-H. Lee ◽  
S. Nahm ◽  
J.-W. Lee ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Reactive Ion Etching ◽  
Ion Etching
Sign in / Sign up

Export Citation Format

Share Document