Production and Development of Neutron Transmutation Doped Silicon

Neutron-Transmutation-Doped Silicon (3rd International Conference, Copenhagen, August 27–29, 1980)

Nuclear Technology ◽

10.13182/nt83-a33244 ◽

1983 ◽

Vol 62 (1) ◽

pp. 122-124

Author(s):

Heinz Herzer

Keyword(s):

International Conference ◽

Doped Silicon ◽

Neutron Transmutation

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Process Induced Recombination Centres in Neutron Transmutation Doped Silicon and their Influence on High-Voltage Direct-Current Thyristors

Neutron Transmutation Doping of Semiconductor Materials ◽

10.1007/978-1-4613-2695-3_13 ◽

1984 ◽

pp. 181-191 ◽

Cited By ~ 2

Author(s):

D. E. Crees ◽

P. D. Taylor

Keyword(s):

High Voltage ◽

Direct Current ◽

High Voltage Direct Current ◽

Doped Silicon ◽

Neutron Transmutation

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Heat treatment effects in neutron transmutation doped silicon

Journal of Nuclear Materials ◽

10.1016/0022-3115(82)90544-x ◽

1982 ◽

Vol 108-109 ◽

pp. 709-714 ◽

Cited By ~ 3

Author(s):

John W. Cleland

Keyword(s):

Heat Treatment ◽

Treatment Effects ◽

Doped Silicon ◽

Neutron Transmutation

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Particle identification with time-of-flight and pulse-shape discrimination in neutron-transmutation-doped silicon detectors

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2009.06.060 ◽

2009 ◽

Vol 608 (2) ◽

pp. 275-286 ◽

Cited By ~ 11

Author(s):

M. Mutterer ◽

W.H. Trzaska ◽

Yu.N. Kopatch ◽

M. Sillanpää ◽

J. von Kalben ◽

...

Keyword(s):

Pulse Shape ◽

Time Of Flight ◽

Pulse Shape Discrimination ◽

Particle Identification ◽

Shape Discrimination ◽

Silicon Detectors ◽

Doped Silicon ◽

Neutron Transmutation

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Peculiarities of Minority Carrier Lifetime Variations in p-n-p-n Structures Fabricated upon Neutron-Transmutation Doped Silicon and Irradiated by Fast Electrons

10.1515/9783112480847-046 ◽

1986 ◽

pp. 371-374

Author(s):

F. P. Korshunov ◽

I. G. Marchenko ◽

V. T. Troshchinskii

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Fast Electrons ◽

Doped Silicon ◽

Neutron Transmutation

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Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy

Journal of Applied Physics ◽

10.1063/1.5134663 ◽

2020 ◽

Vol 127 (3) ◽

pp. 035704 ◽

Cited By ~ 1

Author(s):

C. R. Engst ◽

I. Eisele ◽

C. Kutter

Keyword(s):

Current Transient ◽

Defect Characterization ◽

Induced Current ◽

Doped Silicon ◽

Neutron Transmutation ◽

Transient Spectroscopy ◽

Deep Temperature

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Optical studies of radiation damage in neutron transmutation doped silicon

Radiation Effects ◽

10.1080/00337578008210003 ◽

1980 ◽

Vol 51 (3-4) ◽

pp. 215-221 ◽

Cited By ~ 4

Author(s):

Noboru Fukuoka ◽

John W. Cleland

Keyword(s):

Radiation Damage ◽

Optical Studies ◽

Doped Silicon ◽

Neutron Transmutation

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High infrared responsivity Indium-doped silicon detector material compensated by neutron transmutation

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1980.19810 ◽

1980 ◽

Vol 27 (1) ◽

pp. 2-10 ◽

Cited By ~ 21

Author(s):

T.T. Braggins ◽

H.M. Hobgood ◽

J.C. Swartz ◽

R.N. Thomas

Keyword(s):

Silicon Detector ◽

Doped Silicon ◽

Neutron Transmutation ◽

Detector Material

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Improved Blocking Voltage in Diode with Neutron-Transmutation-Doped Silicon by Field Oxide Annealed in N2O

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.3278 ◽

1998 ◽

Vol 37 (Part 1, No. 6A) ◽

pp. 3278-3279

Author(s):

Liao ◽

Chung-Hsien Chen

Keyword(s):

Blocking Voltage ◽

Doped Silicon ◽

Neutron Transmutation ◽

Field Oxide

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Transient Annealing of Neutron-Transmutation-Doped Silicon

MRS Proceedings ◽

10.1557/proc-35-407 ◽

1984 ◽

Vol 35 ◽

Cited By ~ 1

Author(s):

C J Pollard ◽

K G Barraclough ◽

M S Skolnick

Keyword(s):

Electron Beam ◽

Annealing Process ◽

Dopant Activation ◽

Acceptor Complex ◽

Doped Silicon ◽

Initial Drop ◽

Neutron Transmutation ◽

Highly Uniform ◽

Anneal Time ◽

Scanning Electron

ABSTRACTScanning electron beam annealing has been used to study the annealing of NTD silicon in the temperature range 600-1180°C. The annealing process has been found to be very rapid above 800°C, a 30 second anneal producing highly uniform n-type material. Below this temperature, an initial drop followed by a progressive rise in sample resistivity with increasing anneal time is consistent with phosphorus dopant activation and the formation of a defect-related acceptor complex.

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