Transient Annealing of Neutron-Transmutation-Doped Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
C J Pollard ◽  
K G Barraclough ◽  
M S Skolnick
Keyword(s):  
Electron Beam ◽  
Annealing Process ◽  
Dopant Activation ◽  
Acceptor Complex ◽  
Doped Silicon ◽  
Initial Drop ◽  
Neutron Transmutation ◽  
Highly Uniform ◽  
Anneal Time ◽  
Scanning Electron

ABSTRACTScanning electron beam annealing has been used to study the annealing of NTD silicon in the temperature range 600-1180°C. The annealing process has been found to be very rapid above 800°C, a 30 second anneal producing highly uniform n-type material. Below this temperature, an initial drop followed by a progressive rise in sample resistivity with increasing anneal time is consistent with phosphorus dopant activation and the formation of a defect-related acceptor complex.

Application of Improved Voltage Compensation in the SEM to Imaging of Organic Materials

1973 ◽  
Vol 31 ◽  
pp. 444-445
Author(s):  
P.J. Killingworth ◽  
M. Warren
Keyword(s):  
Electron Beam ◽  
Organic Materials ◽  
Operating Parameters ◽  
Low Density ◽  
Beam Diameter ◽  
Incident Electron Beam ◽  
Specimen Material ◽  
Voltage Compensation ◽  
Selection Of ◽  
Scanning Electron

Ultimate resolution in the scanning electron microscope is determined not only by the diameter of the incident electron beam, but by interaction of that beam with the specimen material. Generally, while minimum beam diameter diminishes with increasing voltage, due to the reduced effect of aberration component and magnetic interference, the excited volume within the sample increases with electron energy. Thus, for any given material and imaging signal, there is an optimum volt age to achieve best resolution.In the case of organic materials, which are in general of low density and electric ally non-conducting; and may in addition be susceptible to radiation and heat damage, the selection of correct operating parameters is extremely critical and is achiev ed by interative adjustment.

X-ray micro tomography in the scanning electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 106-107 ◽  
Author(s):  
W. Brünger
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Target Surface ◽  
The Body ◽  
X Rays ◽  
Cross Sectional ◽  
X Ray ◽  
Micro Tomography ◽  
Scanning Electron

Reconstructive tomography is a new technique in diagnostic radiology for imaging cross-sectional planes of the human body /1/. A collimated beam of X-rays is scanned through a thin slice of the body and the transmitted intensity is recorded by a detector giving a linear shadow graph or projection (see fig. 1). Many of these projections at different angles are used to reconstruct the body-layer, usually with the aid of a computer. The picture element size of present tomographic scanners is approximately 1.1 mm2.Micro tomography can be realized using the very fine X-ray source generated by the focused electron beam of a scanning electron microscope (see fig. 2). The translation of the X-ray source is done by a line scan of the electron beam on a polished target surface /2/. Projections at different angles are produced by rotating the object.During the registration of a single scan the electron beam is deflected in one direction only, while both deflections are operating in the display tube.

Micropatterning of Permalloy Films by Electron Lithography

1976 ◽  
Vol 34 ◽  
pp. 448-449
Author(s):  
J. K. Maurin
Keyword(s):  
Electron Beam ◽  
Subsequent Development ◽  
Electron Optical System ◽  
Microelectronic Device ◽  
Magnetic Bubble ◽  
Control Beam ◽  
Photosensitive Material ◽  
Direct Exposure ◽  
Electron Lithography ◽  
Scanning Electron

Conductor, resistor, and dielectric patterns of microelectronic device are usually defined by exposure of a photosensitive material through a mask onto the device with subsequent development of the photoresist and chemical removal of the undesired materials. Standard optical techniques are limited and electron lithography provides several important advantages, including the ability to expose features as small as 1,000 Å, and direct exposure on the wafer with no intermediate mask. This presentation is intended to report how electron lithography was used to define the permalloy patterns which are used to manipulate domains in magnetic bubble memory devices.The electron optical system used in our experiment as shown in Fig. 1 consisted of a high resolution scanning electron microscope, a computer, and a high precision motorized specimen stage. The computer is appropriately interfaced to address the electron beam, control beam exposure, and move the specimen stage.

High Resolution Scanning Electron Microscopy

1991 ◽  
Vol 49 ◽  
pp. 478-479
Author(s):  
David Joy ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Impact Point ◽  
Interaction Volume ◽  
Scanning Electron

The scanning electron microscope (SEM) builds up an image by sampling contiguous sub-volumes near the surface of the specimen. A fine electron beam selectively excites each sub-volume and then the intensity of some resulting signal is measured. The spatial resolution of images made using such a process is limited by at least three factors. Two of these determine the size of the interaction volume: the size of the electron probe and the extent to which detectable signal is excited from locations remote from the beam impact point. A third limitation emerges from the fact that the probing beam is composed of a finite number of discrete particles and therefore that the accuracy with which any detectable signal can be measured is limited by Poisson statistics applied to this number (or to the number of events actually detected if this is smaller).

A Color Coded STEM/SEM Image Storage System

1981 ◽  
Vol 39 ◽  
pp. 272-273
Author(s):  
Y. Kokubo ◽  
W. H. Hardy ◽  
J. Dance ◽  
K. Jones
Keyword(s):  
Image Processing ◽  
Electron Beam ◽  
Storage System ◽  
Particle Analysis ◽  
Specific Information ◽  
X Rays ◽  
Sem Image ◽  
Backscattered Electrons ◽  
Wide Range ◽  
Scanning Electron

A color coded digital image processing is accomplished by using JEM100CX TEM SCAN and ORTEC’s LSI-11 computer based multi-channel analyzer (EEDS-II-System III) for image analysis and display. Color coding of the recorded image enables enhanced visualization of the image using mathematical techniques such as compression, gray scale expansion, gamma-processing, filtering, etc., without subjecting the sample to further electron beam irradiation once images have been stored in the memory.The powerful combination between a scanning electron microscope and computer is starting to be widely used 1) - 4) for the purpose of image processing and particle analysis. Especially, in scanning electron microscopy it is possible to get all information resulting from the interactions between the electron beam and specimen materials, by using different detectors for signals such as secondary electron, backscattered electrons, elastic scattered electrons, inelastic scattered electrons, un-scattered electrons, X-rays, etc., each of which contains specific information arising from their physical origin, study of a wide range of effects becomes possible.

Slow-Scan CCD Observation of Backscattering Patterns in SEM

1992 ◽  
Vol 50 (2) ◽  
pp. 1308-1309
Author(s):  
F. Ouyang ◽  
D. A. Ray ◽  
O. L. Krivanek
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Dynamic Range ◽  
High Sensitivity ◽  
Lens System ◽  
Wide Dynamic Range ◽  
Peltier Cooler ◽  
Diffraction Patterns ◽  
Scanning Electron

Electron backscattering Kikuchi diffraction patterns (BKDP) reveal useful information about the structure and orientation of crystals under study. With the well focused electron beam in a scanning electron microscope (SEM), one can use BKDP as a microanalysis tool. BKDPs have been recorded in SEMs using a phosphor screen coupled to an intensified TV camera through a lens system, and by photographic negatives. With the development of fiber-optically coupled slow scan CCD (SSC) cameras for electron beam imaging, one can take advantage of their high sensitivity and wide dynamic range for observing BKDP in SEM.We have used the Gatan 690 SSC camera to observe backscattering patterns in a JEOL JSM-840A SEM. The CCD sensor has an active area of 13.25 mm × 8.83 mm and 576 × 384 pixels. The camera head, which consists of a single crystal YAG scintillator fiber optically coupled to the CCD chip, is located inside the SEM specimen chamber. The whole camera head is cooled to about -30°C by a Peltier cooler, which permits long integration times (up to 100 seconds).

Investigation of Die Tilting of Packages with Single and Multi-chips

2018 ◽  
Author(s):  
Lo Chea Wee ◽  
Tan Sze Yee ◽  
Gan Sue Yin ◽  
Goh Cin Sheng
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Optical Microscopy ◽  
Device Performance ◽  
Electronic Components ◽  
Area Of Interest ◽  
On Chip ◽  
Scanning Electron

Abstract Advanced package technology often includes multi-chips in one package to accommodate the technology demand on size & functionality. Die tilting leads to poor device performance for all kinds of multi-chip packages such as chip by chip (CbC), chip on chip (CoC), and the package with both CbC and CoC. Traditional die tilting measured by optical microscopy and scanning electron microscopy has capability issue due to wave or electron beam blocking at area of interest by electronic components nearby. In this paper, the feasibility of using profilemeter to investigate die tilting in single and multi-chips is demonstrated. Our results validate that the profilemeter is the most profound metrology for die tilting analysis especially on multi-chip packages, and can achieve an accuracy of <2μm comparable to SEM.

Automatic pattern positioning of scanning electron beam exposure

1970 ◽  
Vol 17 (6) ◽  
pp. 450-457 ◽  
Author(s):  
S. Miyauchi ◽  
K. Tanaka ◽  
J.C. Russ
Keyword(s):  
Electron Beam ◽  
Scanning Electron Beam ◽  
Scanning Electron
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