Ion Implantation for Deep (> 100 μm) Buried Layers

2008 ◽  
pp. 77-77-19
Author(s):  
WR Fahrner ◽  
D Bräunig ◽  
M Knoll ◽  
JR Laschinski
Keyword(s):  
Ion Implantation ◽  
Buried Layers

Characteristics of Bipolar Transistors with Various Depths of n+Buried Layers Formed by High-Energy Ion Implantation

1992 ◽  
Vol 31 (Part 1, No. 2A) ◽  
pp. 156-160 ◽  
Author(s):  
Akihiro Tamba ◽  
Yutaka Kobayashi ◽  
Tadashi Suzuki ◽  
Nobuyoshi Natsuaki
Keyword(s):  
Ion Implantation ◽  
High Energy ◽  
Bipolar Transistors ◽  
Buried Layers

Fabrication of High Quality Silicide Layers by Ion Implantation

1989 ◽  
Vol 147 ◽  
Author(s):  
Karen J Reeson ◽  
Ann De Veirman ◽  
Russell Gwilliam ◽  
Chris Jeynes ◽  
Brian J Sealy ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal Silicon ◽  
High Quality ◽  
Crystal Silicon ◽  
The Matrix ◽  
Buried Layer ◽  
Buried Layers ◽  
C 30 ◽  
Type Lattice ◽  
Anneal Temperature

AbstractBuried layers of CoSi2 have been successfully fabricated in (100) single crystal silicon by implanting 350 keV Co+ to doses in the range 2 - 7 × 1017 cm−2 at a temperature of ∼550°C. For doses ≥ 4 × 101759Co+ cm−2, a continuous buried layer of CoSi2 grows epitaxially, during implantation. After annealing (1000°C 30 minutes) continuous layers of stoichiometric CoSi2 which are coherent with the matrix are produced for doses ≥ 4 × 101759Co+ cm−2. For doses of ≤ 2 × 101759Co+, cm−2, discrete octahedral precipitates of monocrystalline CoSi2 are observed. Isochronal annealing (for 5s) at temperatures in the range 800–1200°C, shows that at temperatures ≥ 900°C there is significant redistribution of the Co from B-type or interstitial sites → substitutional A-type lattice sites. As the anneal temperature is increased there is a corresponding improvement in the crystallinity and coherency of the Si and CoSi2 lattices. This shows that at a given temperature much of the Co redistribution takes place within the first 5s of the anneal.

Formation of Buried Tisi2 Layers in Single Crystal Silicon by Ion Implantion

1987 ◽  
Vol 107 ◽  
Author(s):  
P. Madakson ◽  
G.J. Clark ◽  
F.K. Legoues ◽  
F.M. d'Heurle ◽  
J.E.E. Baglin
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Buried Layers

Buried TiSi2 layers, about 600Å thick and 900Å below the surface, were formed in < 111> silicon by ion implantation. The implantation was done with either 120 or 170 keV Ti+ to doses ranging from 5 x 1016 to 2 x 1017 ions/cm2, and at temperatures of between ambient and 650° C. Annealing was done at 600° C, 700°C and 1000°C. Continuous buried layers were achieved only with samples implanted with doses equal or greater than 1017 ions/cm2 and at temperatures above 450°C. Below this dose TiSi2, was present only as discrete precipitates. For room temperature implants, the TiSi2, layer is formed on the surface. The damage present consists of dispersed TiSi6 precipitates and microtwins.

keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
J.K.N. Lindner ◽  
A. Frohnwieser ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Ion Implantation ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Ion Beam ◽  
High Dose ◽  
Layer Formation ◽  
Substrate Orientation ◽  
Ion Beam Synthesis ◽  
Buried Layers ◽  
Precipitate Layer

AbstractHomogenous, epitaxial buried layers of 3C-SÍC have been formed in Si(100) and Si(lll) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1250 °C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favourable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.

TEM study of buried yttrium silicide formed by ion implantation

1990 ◽  
Vol 48 (4) ◽  
pp. 570-571
Author(s):  
T.L. Alford ◽  
N.D. Theodore ◽  
J.C. Barbour ◽  
C.B. Carter ◽  
J.W. Mayer
Keyword(s):  
Ion Implantation ◽  
Large Scale ◽  
Schottky Barrier Height ◽  
Lattice Mismatch ◽  
Good Thermal Stability ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Silicides ◽  
Vacuum Anneal ◽  
Buried Layers

Metal silicides are now used extensively in very-large-scale-integrated (VLSI) electronics due to their low resistivity, good thermal stability, and ability to form on Si. Of these silicides, yttrium silicide, YSi2-x has essentially 0% lattice mismatch with (111)Si, a low Schottky barrier height on n-type Si, and a unit cell based on the AlB2-type structure, but with 15-20% vacancies on the Si sublattice. Recent investigations of high-temperature ion implantation of yttrium ions into Si have emphasized the formation of buried-silicide layers. This study is focussed on the microstructure and defects in the vicinity of buried YSi2-x layers formed by Y-ion implantation into Si.Yttrium-silicide buried layers were formed by implanting 330 or 660 keV Y ions into (11l)Si substrates held at 450°C followed by a 1000°C, 1-hour vacuum anneal. The implant fluences varied from 1 to 3.6×l017 Y/cm2. Cross-section transmission electron microscopy (XTEM) analysis was carried out using a JEOL 4000EX electron microscope operating at 400 kV.

Silicon on Insulator Formed By O+ OR N+ Ion Implantation

1985 ◽  
Vol 53 ◽  
Author(s):  
P.L.F. Hemment
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Silicon On Insulator ◽  
Defect Annealing ◽  
Chemical Segregation ◽  
High Temperature Processing ◽  
Buried Layers

ABSTRACTThe synthesis of buried layers of SiO2 and Si3N4, by ion implantation is reviewed. This process, which may be used to form device worthy silicon-on-insulator (SOI) structures, involves (i) implantation of O+ or N+ ions and (ii) high temperature processing to achieve defect annealing and chemical segregation of the implanted species.

Buried SiC Layers in (100) Bulk Silicon and Silicon-on-Sapphire Produced by Carbon Ion Implantation

1985 ◽  
Vol 45 ◽  
Author(s):  
L. Kroko ◽  
I. Golecki ◽  
H.L. GLASS
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Bulk Silicon ◽  
X Ray Diffraction ◽  
X Ray ◽  
Infra Red ◽  
Buried Layers ◽  
Secondary Ion ◽  
Crystal Bulk

ABSTRACTWe demonstrate the formation of buried layers of SiC in (100) single-crystal bulk Si and silicon-on-sapphire by ion implantation of 125-180 keV, (0.56-1.00)×1018 C/cm2 at 30-40 μA/cm2 into samples held at 450-650¼C. The as-implanted and 950°C annealed samples are characterized by differential infra-red absorbance and reflectance, Rutherford backscattering and channeling spectrometry, X-ray diffraction, four-point probe, Dektak profilometry, I-V measurements, spreading resistance and secondary ion mass spectrometry.

Etch‐Stop Behavior of Buried Layers Formed by Substoichiometric Nitrogen Ion Implantation into Silicon

1996 ◽  
Vol 143 (3) ◽  
pp. 1026-1033 ◽  
Author(s):  
A. Pérez‐Rodríguez ◽  
A. Romano‐Rodríguez ◽  
J. R. Morante ◽  
M. C. Acero ◽  
J. Esteve ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Nitrogen Ion Implantation ◽  
Etch Stop ◽  
Buried Layers ◽  
Nitrogen Ion
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