Strain-Induced Lateral Confinement of Carriers in Semiconductor Quantum Wells

1988 ◽  
Vol 144 ◽  
Author(s):  
K. Kash ◽  
R. Bhat ◽  
Derek D. Mahoney ◽  
J.M. Worlock ◽  
P.S.D. Lin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Band Gap ◽  
Red Shift ◽  
Lateral Confinement ◽  
Semiconductor Quantum Wells ◽  
20 Nm ◽  
Ingaas Quantum Well

ABSTRACTWe describe here an effort to provide lateral confinement of carriers within a continuous InGaAs quantum well by creating a pattern of strain in the well. A compressed InGaAsP layer overlying the quantum well and the InP barrier was patterned into submicron stressor wires by etching to within approximately 20 nm of the InP barrier. The relaxation of the compression at the edges of the quaternary stressors resulted in dilation of the quantum well material under their centers, thus lowering the band gap of the material, providing confinement for both electrons and holes there. We observed a red shift of the quantum well luminescence of 7 meV for 400 nm wide wires, evidence for the strain-induced lateral confinement. This is the first observation of a red-shifted band gap in submicron strain-confining structures.

Strained Quantum Wells for P-channel InGaAs CMOS

2008 ◽  
Vol 1108 ◽  
Author(s):  
Padmaja Nagaiah ◽  
Vadim Tokranov ◽  
Michael Yakimov ◽  
Serge Oktyabrsky
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Room Temperature ◽  
Indium Content ◽  
Hole Transport ◽  
Scattering Mechanism ◽  
Almost All ◽  
20 Nm ◽  
Lattice Matched ◽  
Ingaas Quantum Well

AbstractWe present experimental results on the effect of strain on hole transport in InGaAs quantum well (QW) structures. Indium content was varied from lattice matched to high compressive stress in InGaAs/InP QW and the transport properties were analyzed at various temperatures (T = 77-300 K) using Hall measurements. The effect of QW thickness (4-20 nm) on hole transport is also presented. The current best results include room temperature mobility and sheet resistance of 390 cm2/V-s and 8500 Ω/sq., respectively. It was observed that the mobility had a T-1.8 dependence indicating similar scattering mechanism in almost all of the samples with prominent mechanism being due to interface and barrier scattering. Further optimization of p-channel for InGaAs CMOS needs to be performed using the above results as guidelines.

Band-gap renormalization and strain effects in semiconductor quantum wells

1998 ◽  
Vol 245 (1) ◽  
pp. 45-51 ◽  
Author(s):  
Mi-Ra Kim ◽  
Cheol-Hoi Kim ◽  
Baik-Hyung Han
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Strain Effects ◽  
Semiconductor Quantum Wells

scholarly journals Внутризонное поглощение излучения дырками в квантовых ямах InAsSb/AlSb и InGaAsP/InP

2018 ◽  
Vol 52 (2) ◽  
pp. 207
Author(s):  
Н.В. Павлов ◽  
Г.Г. Зегря ◽  
А.Г. Зегря ◽  
В.Е. Бугров
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Incident Radiation ◽  
Radiation Absorption ◽  
Hole Density ◽  
Internal Radiation ◽  
Radiation Losses ◽  
Semiconductor Quantum Wells ◽  
Quantum Well Width ◽  
Split Band

AbstractMicroscopic analysis of intraband radiation absorption by holes with their transition to the spin-split band for InAsSb/AlSb and InGaAsP/InP semiconductor quantum wells is performed in the context of the four-band Kane model. The calculation is performed for two incident-radiation polarizations: along the crystal-growth axis and in the quantum-well plane. It is demonstrated that absorption with transition to the discrete spectrum of spin-split holes has a higher intensity than absorption with transitions to the continuous spectrum. The dependences of the intraband absorption coefficient on temperature, hole density, and quantum- well width are thoroughly analyzed. It is shown that intraband radiation absorption can be the main mechanism of internal radiation losses in lasers based on quantum wells.

Circular Photogalvanic Effect in SiGe Semiconductor Quantum Wells

2001 ◽  
Vol 690 ◽  
Author(s):  
Sergey D. Ganichev ◽  
Franz-Peter Kalz ◽  
Ulrich Rössler ◽  
Wilhelm Prettl ◽  
Eugenius L. Ivchenko ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Infrared Radiation ◽  
Spin Splitting ◽  
Inversion Symmetry ◽  
Directed Motion ◽  
Spin Orientation ◽  
Photogalvanic Effect ◽  
Free Carriers ◽  
Semiconductor Quantum Wells

ABSTRACTThe photogalvanic effects, which require a system lacking inversion symmetry, become possible in SiGe based quantum well (QW) structures due to their built-in asymmetry. We report on observations of the circular and linear photogalvanic effects induced by infrared radiation in (001)-and (113)-orientedp–Si/Si1–xGex QW structures and analyse these observations in view of the possible symmetry of these structures. The circular photogalvanic effect arises due to optical spin orientation of free carriers in QWs with band splitting in k-space which results in a directed motion of free carriers in the plane of the QW. We discuss possible mechanisms that give rise to spin-splitting of the electronic subband states for different symmetries.

scholarly journals Electronically Tunable Wide Band Optical Delay Line Based on InGaAs Quantum Well Microresonators

2013 ◽  
Vol 2013 ◽  
pp. 1-6
Author(s):  
Yan Zhang ◽  
Geoff W. Taylor
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Delay Line ◽  
Wide Band ◽  
Blue Shift ◽  
Optical Delay Line ◽  
Performance Simulation ◽  
Optical Delay ◽  
Electronically Tunable ◽  
Ingaas Quantum Well

A novel electronically tunable optical delay line based on InGaAs quantum well microresonators is proposed for high frequency RF transmission. The device utilizes the charge-controlled blue shift of the absorption edge in InGaAs quantum wells to change the effective refractive indices of the resonators and couplers, therefore, provides an efficient way to produce variable time delay. A theoretical model based on measurements is used to analyze the device performance. Simulation results for five 3 × 27 μm2 cascaded resonators with bias voltages <0.7 V show a continuous tuning range of 7~68 ps, a ripple delay <1.5 ps, and a useable bandwidth of 39.3 GHz.

Photoluminescence In Strain Compensated Siisigec Multiple Quantum Wells

1998 ◽  
Vol 533 ◽  
Author(s):  
R. Hartmann ◽  
U. Gennser ◽  
D. Grützmacher ◽  
H. Sigg ◽  
E. Müller ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Band Gap ◽  
Valence Band ◽  
Band Alignment ◽  
Multiple Quantum ◽  
Type I ◽  
Strain Compensation ◽  
Quantum Well States ◽  
Good Agreement

AbstractThe effect of strain compensation on the band gap and band alignment of Si/SiGeC MQWs is studied by photoluminescence (PL) spectroscopy. Evidence for type-I band alignment of strain reduced SiGeC MQWs is found. Values for the conduction and valence band offsets are given. A band gap reduction for exactly strain compensated SiGeC compared to compressive SiGeC is observed. This behavior is interpreted in terms of strain induced splitting and confinement shifts of the quantum well states. A good agreement between the model and the PL data is obtained.

Ultrafast ac Stark effect switching of the active photonic band gap from Bragg-periodic semiconductor quantum wells

2002 ◽  
Vol 81 (23) ◽  
pp. 4332-4334 ◽  
Author(s):  
J. P. Prineas ◽  
J. Y. Zhou ◽  
J. Kuhl ◽  
H. M. Gibbs ◽  
G. Khitrova ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Stark Effect ◽  
Photonic Band Gap ◽  
Semiconductor Quantum Wells ◽  
Ac Stark Effect ◽  
Photonic Band

scholarly journals High-temperature Mott transition in wide-band-gap semiconductor quantum wells

2014 ◽  
Vol 90 (20) ◽  
Author(s):  
G. Rossbach ◽  
J. Levrat ◽  
G. Jacopin ◽  
M. Shahmohammadi ◽  
J.-F. Carlin ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Band Gap ◽  
Wide Band ◽  
Mott Transition ◽  
Wide Band Gap ◽  
Semiconductor Quantum Wells

A fully verified theoretical analysis of strain-photonic coupling for quantum wells embedded in wavy nanoribbons

Nanoscale ◽  
2018 ◽  
Vol 10 (26) ◽  
pp. 12657-12664 ◽  
Author(s):  
Jiushuang Zhang ◽  
Yun Xu ◽  
Yu Jiang ◽  
Lin Bai ◽  
Huamin Chen ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Quantum Well ◽  
Quantum Wells ◽  
Band Gap ◽  
Optoelectronic Devices ◽  
Strain Engineering ◽  
Research Field ◽  
Semiconductor Quantum Well

For optoelectronic devices, an attractive research field involves the flexible adjustment of the band gap in semiconductor quantum well (QW) structures by strain engineering.

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