Two-dimensional electron-hole pair diffusivities in thin GaAs/AlGaAs Quantum Wells

1993 ◽  
Vol 56 (5) ◽  
pp. 445-448 ◽  
Author(s):  
H. Hillmer ◽  
C. W. Tu
1997 ◽  
Vol 55 (20) ◽  
pp. 13677-13681 ◽  
Author(s):  
Ikai Lo ◽  
Jih-Chen Chiang ◽  
Shiow-Fon Tsay ◽  
W. C. Mitchel ◽  
M. Ahoujja ◽  
...  

JETP Letters ◽  
2016 ◽  
Vol 104 (3) ◽  
pp. 163-168 ◽  
Author(s):  
S. N. Nikolaev ◽  
V. S. Krivobok ◽  
V. S. Bagaev ◽  
E. E. Onishchenko ◽  
A. V. Novikov ◽  
...  

2002 ◽  
Vol 80 (7) ◽  
pp. 781-786
Author(s):  
Y P Varshni

The energies of ten excited states of screened two-dimensional excitons in a semiconducting quantum-well structure are calculated as a function of the screening parameter qs by the WKB method. The screening of the Coulomb interaction between the electron–hole pair by the free carriers present is taken into account by using the screened potential obtained by Stern and Howard (1967). The energies of the excited states are found to decrease with increasing values of the screening parameter qs in all cases. Further the levels become unbound at finite values of the screening parameter. Critical screening parameters are estimated for the ten states. PACS Nos.: 73.21Fg, 78.67De, 71.35-y, 71.35Cc


1992 ◽  
Vol 45 (3) ◽  
pp. 1240-1245 ◽  
Author(s):  
H. Hillmer ◽  
A. Forchel ◽  
C. W. Tu

2020 ◽  
Vol 62 (4) ◽  
pp. 529
Author(s):  
А.А. Васильченко ◽  
В.С. Кривобок ◽  
С.Н. Николаев ◽  
В.С. Багаев ◽  
Е.Е. Онищенко ◽  
...  

Abstract Based on calculations within the density functional theory and an analysis of low-temperature photoluminescence spectra, the structure of electron–hole liquid in shallow Si/Si_1 – _ x Ge_ x Si (100) quantum wells 5 nm wide with germanium content x = 3–5.5% is studied. It is shown that the energy of quasi-two-dimensional electron–hole liquid localized in quantum wells for this composition range as a function of carrier concentration exhibits two local minima. The position of the deeper (major) minimum depends on the quantum well design and controls properties of quasi-two-dimensional electron–hole liquid at low temperatures. For the series of Si/Si_1 – _ x Ge_ x Si quantum wells, modification of properties of electron–hole liquid was experimentally shown, which can be interpreted as a change of the major minimum due to an increases in the germanium concentration in the Si_1 – _ x Ge_ x layer. The effect of the multicomponent composition (electrons, light and heavy holes) of the electron–hole liquid on low-temperature photoluminescence spectra of Si/Si_1 ‒ _ x Ge_ x Si quantum wells is discussed.


2015 ◽  
Vol 51 (5) ◽  
pp. 858-861 ◽  
Author(s):  
Wee-Jun Ong ◽  
Lling-Lling Tan ◽  
Siang-Piao Chai ◽  
Siek-Ting Yong

Graphene–g-C3N4 demonstrated high visible-light photoactivity of CO2 reduction to CH4, which was ascribed to the inhibition of electron–hole pair recombination by graphene.


2011 ◽  
Vol 8 (4) ◽  
pp. 1161-1164 ◽  
Author(s):  
G. Manzke ◽  
F. Richter ◽  
D. Semkat ◽  
G. K. G. Burau ◽  
F. Kieseling ◽  
...  

2011 ◽  
Vol 83 (19) ◽  
Author(s):  
Z. D. Kvon ◽  
E. B. Olshanetsky ◽  
E. G. Novik ◽  
D. A. Kozlov ◽  
N. N. Mikhailov ◽  
...  

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