Fundamental investigation of silicon wafer edge treatment by ultrasonically assisted polishing (UAP)

2011 ◽  
Vol 40 (3/4) ◽  
pp. 264 ◽  
Author(s):  
Yongbo Wu ◽  
Weiping Yang
Keyword(s):  
Silicon Wafer ◽  
Fundamental Investigation ◽  
Edge Treatment ◽  
Wafer Edge

Defectivity improvement by modified wafer edge treatment in immersion lithography

2009 ◽  
Author(s):  
Masafumi Fujita ◽  
Takao Tamura ◽  
Naka Onoda ◽  
Takayuki Uchiyama
Keyword(s):  
Immersion Lithography ◽  
Edge Treatment ◽  
Wafer Edge

C33 Improvement of global flatness and site flatness near wafer edge in polishing of silicon wafer

2014 ◽  
Vol 2014.10 (0) ◽  
pp. 181-182
Author(s):  
Urara SATAKE ◽  
Toshiyuki ENOMOTO ◽  
Kenji HIROSE ◽  
Keitaro FUJI
Keyword(s):  
Silicon Wafer ◽  
Wafer Edge

scholarly journals Mirror Surface Finishing of Silicon Wafer Edge Using Ultrasonic Assisted Fixed-Abrasive CMP (UF-CMP)

2013 ◽  
Vol 7 (6) ◽  
pp. 663-670 ◽  
Author(s):  
Yongbo Wu ◽  
◽  
Weiping Yang ◽  
Masakazu Fujimoto ◽  
Libo Zhou ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Mechanical Action ◽  
Surface Finishing ◽  
Ultrasonic Frequency ◽  
Optimal Processing ◽  
Experimental Apparatus ◽  
Ultrasonic Assisted ◽  
Edge Surface ◽  
Fixed Abrasive ◽  
Wafer Edge

This paper proposes a new method of using Ultrasonic Assisted fixed-abrasive CMP (UA-CMP) to treat silicon wafer edges. In this method, a disc-shaped pellet containing CeO2abrasives is attached to the end face of an ultrasonic head. The head is elliptically vibrated at an ultrasonic frequency, rotated at a given speed, and pressed against the work-surface of a silicon wafer edge at a certain normal force. In so doing, a solid-state chemical reaction occurs between the CeO2abrasives and the silicon to form amorphous Ce-O-Si, which is easily removed from the silicon by the mechanical action of the ultrasonic vibration and rotation of the pellet. An experimental apparatus is produced and its fundamental performance is confirmed experimentally. Subsequently, the optimal processing conditions are determined experimentally using the Taguchi method. A mirror edge surface of around Ra3nm with few defects is obtained repeatedly under the optimum conditions.

Precision treatment of silicon wafer edge utilizing ultrasonically assisted polishing technique

2008 ◽  
Vol 201 (1-3) ◽  
pp. 531-535 ◽  
Author(s):  
N. Kobayashi ◽  
Y. Wu ◽  
M. Nomura ◽  
T. Sato
Keyword(s):  
Silicon Wafer ◽  
Wafer Edge

21413 The influence of wafer edge profile on polishing non-uniformity in silicon wafer manufacturing

2008 ◽  
Vol 2008.14 (0) ◽  
pp. 405-406
Author(s):  
Akira FUKUDA ◽  
Tetsuo FUKUDA ◽  
Hirokuni HIYAMA ◽  
Manabu TSUJIMURA ◽  
Toshiro DOI ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Edge Profile ◽  
Wafer Manufacturing ◽  
Wafer Edge

Fundamental Investigation of a Gas Circuit Breaker in University

2010 ◽  
Vol 130 (12) ◽  
pp. 1047-1052
Author(s):  
Hiroaki Toda ◽  
Masayuki Hikita ◽  
Hisatoshi Ikeda
Keyword(s):  
Circuit Breaker ◽  
Fundamental Investigation
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