scholarly journals Properties of Erbium Doped Hydrogenated Amorphous Carbon Layers Fabricated by Sputtering and Plasma Assisted Chemical Vapor Deposition

10.14311/943 ◽  
2008 ◽  
Vol 48 (1) ◽  
Author(s):  
V. Prajzler ◽  
Z. Burian ◽  
V. Jeřábek ◽  
I. Hüttel ◽  
J. Špirková ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Elastic Recoil ◽  
X Ray Diffraction ◽  
Elastic Recoil Detection ◽  
Glass Substrates ◽  
Detection Analysis ◽  
Erbium Doped ◽  
Hydrogenated Amorphous

We report about properties of carbon layers doped with Er3+ ions fabricated by Plasma Assisted Chemical Vapor Deposition (PACVD) and by sputtering on silicon or glass substrates. The structure of the samples was characterized by X-ray diffraction and their composition was determined by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The Absorbance spectrum was taken in the spectral range from 400 nm to 600 nm. Photoluminescence spectra were obtained using two types of Ar laser (λex=514.5 nm, lex=488 nm) and also using a semiconductor laser (λex=980 nm). Samples fabricated by magnetron sputtering exhibited typical emission at 1530 nm when pumped at 514.5 nm. 

Chemical Vapor Deposition of Vanadium Oxide Tiiin Films

1993 ◽  
Vol 335 ◽  
Author(s):  
Ogie Stewart ◽  
Joan Rodriguez ◽  
Keith B. Williams ◽  
Gene P. Reck ◽  
Narayan Malani ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vanadium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Pressure Chemical ◽  
Vanadium Oxide Thin Films ◽  
Deposited Films

AbstractVanadium oxide thin films were grown on glass substrates by atmospheric pressure chemical vapor deposition (APCVD) from the reaction of vanadium(IV) chloride with isopropanol and t-butanol. Films were deposited in the temperature range 250 to 450°C. The as-deposited films were a dark greenish color consistent with formation of a lower oxide of vanadium. Annealing a film deposited on Corning 7059 glass in air converted the material to a yellow film. X-ray diffraction of the yellow film revealed the presence of V2O5. Optical spectra of the films are presented. Glass substrates previously coated with conductive fluorine doped tin oxide were coated with V2O5 and evaluated for electrochromic activity.

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

Preparation and Characrization of Tic/C Composite Fiber by Chemical Vapor Deposition

2012 ◽  
Vol 455-456 ◽  
pp. 935-938
Author(s):  
Hai Quan Wang
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Composite Fiber ◽  
Composite Fibers ◽  
X Ray Diffraction ◽  
Reaction Conditions ◽  
Tic Particle ◽  
Higher Temperature

- TiC/C composite fibers were prepared by vapor phase titanizing of the regular carbon fibers via chemical vapor deposition (CVD). The carbon fibers were titanized from the surface of the fiber to the core. Scanning electron microscope (SEM) and X-ray diffraction (XRD) were applied to characterize the morphology and structure of the TiC/C composite fibers. The influences of CVD reaction conditions such as temperature and reaction time on the TiC particle size and the thickness of the deposited layer were investigated. Higher temperature and longer time resulted in the growth of bigger size of the TiC crystal particles, and the particle uniformity was also decreased.

Effect of Argon during Diamond Deposition by Hot Filament Chemical Vapor Deposition

2016 ◽  
Vol 869 ◽  
pp. 721-726 ◽  
Author(s):  
Divani C. Barbosa ◽  
Ursula Andréia Mengui ◽  
Mauricio R. Baldan ◽  
Vladimir J. Trava-Airoldi ◽  
Evaldo José Corat
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Gas Mixture ◽  
X Ray Diffraction ◽  
Hot Filament ◽  
Argon Content

The effect of argon content upon the growth rate and the properties of diamond thin films grown with different grains sizes are explored. An argon-free and argon-rich gas mixture of methane and hydrogen is used in a hot filament chemical vapor deposition reactor. Characterization of the films is accomplished by scanning electron microscopy, Raman spectroscopy and high-resolution x-ray diffraction. An extensive comparison of the growth rate values and films morphologies obtained in this study with those found in the literature suggests that there are distinct common trends for microcrystalline and nanocrystalline diamond growth, despite a large variation in the gas mixture composition. Included is a discussion of the possible reasons for these observations.

Real-Time Composition And Thickness Control Techniques In A Metalorganic Chemical Vapor Deposition Process

1995 ◽  
Vol 406 ◽  
Author(s):  
M. S. Gaffneyt ◽  
C. M. Reavesl ◽  
A. L Holmes ◽  
R. S. Smith ◽  
S. P. DenBaars
Keyword(s):  
Chemical Vapor Deposition ◽  
Real Time ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Normal Operation ◽  
Growth Monitoring ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metalorganic Chemical

AbstractMetalorganic chemical vapor deposition (MOCVD) is a process used to manufacture electronic and optoelectronic devices that has traditionally lacked real-time growth monitoring and control. We have developed control strategies that incorporate monitors as real-time control sensors to improve MOCVD growth. An analog control system with an ultrasonic concentration monitor was used to reject bubbler concentration disturbances which exist under normal operation, during the growth of a four-period GaInAs/InP superlattice. Using X-ray diffraction, it was determined that the normally occurring concentration variations led to a wider GaInAs peak in the uncompensated growths as compared to the compensated growths, indicating that closed loop control improved GaInAs composition regulation. In further analysis of the X-ray diffraction curves, superlattice peaks were used as a measure of high crystalline quality. The compensated curve clearly displayed eight orders of satellite peaks, whereas the uncompensated curve shows little evidence of satellite peaks.

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