Ultra High-Speed Quantum-Well Semiconductor Lasers

2019 ◽  
Author(s):  
K. Uomi
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Speed ◽  
Ultra High Speed

Indium Antimonide based Quantum Well FETs for Ultra-High Speed Electronics

2006 ◽  
Author(s):  
T. Ashley ◽  
L. Buckle ◽  
M. Emeny ◽  
M. Fearn ◽  
D. Hayes ◽  
...  
Keyword(s):  
Quantum Well ◽  
Indium Antimonide ◽  
High Speed ◽  
Ultra High Speed

Ultra-high speed semiconductor lasers

1985 ◽  
Vol 21 (2) ◽  
pp. 121-138 ◽  
Author(s):  
Kam Lau ◽  
A. Yariv
Keyword(s):  
Semiconductor Lasers ◽  
High Speed ◽  
Ultra High Speed

Ultra-high-speed multiple-quantum-well electro-absorption optical modulators with integrated waveguides

1996 ◽  
Vol 14 (9) ◽  
pp. 2026-2034 ◽  
Author(s):  
T. Ido ◽  
S. Tanaka ◽  
M. Suzuki ◽  
M. Koizumi ◽  
H. Sano ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Speed ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Ultra High Speed

HIGH SPEED SEMICONDUCTOR LASERS

1994 ◽  
Vol 05 (01) ◽  
pp. 1-44 ◽  
Author(s):  
RADHAKRISHNAN NAGARAJAN ◽  
DANIEL TAUBER ◽  
JOHN E. BOWERS
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Dynamic Characteristics ◽  
Frequency Modulation ◽  
High Speed ◽  
Carrier Transport ◽  
Modulation Frequency ◽  
Signal Transmission ◽  
Photon Density ◽  
Intensity Noise

The strategy and methods to design high speed semiconductor lasers are reviewed here. The formalism for the analysis of intensity modulation, frequency modulation and intensity noise in quantum well lasers is first derived. Using this formalism the process of optimizing the laser structure for high speed operation is presented. In addition to the conventional factors such as the differential gain, photon density, photon lifetime and device parasitics, we also review the critical effects of carrier transport and microwave signal transmission on the dynamic characteristics and design of high speed semiconductor lasers.

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