Ultra-high-speed multiple-quantum-well electro-absorption optical modulators with integrated waveguides

1996 ◽  
Vol 14 (9) ◽  
pp. 2026-2034 ◽  
Author(s):  
T. Ido ◽  
S. Tanaka ◽  
M. Suzuki ◽  
M. Koizumi ◽  
H. Sano ◽  
...  
1990 ◽  
Vol 8 (7) ◽  
pp. 1027-1032 ◽  
Author(s):  
K. Wakita ◽  
I. Kotaka ◽  
O. Mitomi ◽  
H. Asai ◽  
Y. Kawamura ◽  
...  

1997 ◽  
Vol 08 (04) ◽  
pp. 587-598 ◽  
Author(s):  
Ching-Ting Lee ◽  
Tzer-En Nee

Large electroabsorption was observed in InGaAs/InAlGaAs multiple quantum well structures grown on GaAs substrates operating near 1.3 μm. The molecular beam epitaxy (MBE) growth of these structures was incorporation of a carefully designed InAlAs multistage strain-relaxed buffer. The optical absorption spectra as a function of the reverse bias at room temperature are shown. The good characteristics of the optical modulators fabricated on this structure have indicated its potential for practical applications of high-speed modulation.


2006 ◽  
Author(s):  
Sylvain Maine ◽  
Delphine Marris-Morini ◽  
Laurent Vivien ◽  
Daniel Pascal ◽  
Eric Cassan ◽  
...  

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