scholarly journals Broadband multi-layer terahertz metamaterials fabrication and characterization on flexible substrates

2011 ◽  
Vol 19 (8) ◽  
pp. 6990 ◽  
Author(s):  
N. R. Han ◽  
Z. C. Chen ◽  
C. S. Lim ◽  
B. Ng ◽  
M. H. Hong
2010 ◽  
Vol 87 (11) ◽  
pp. 2097-2102 ◽  
Author(s):  
Seungju Chun ◽  
Kang-Soo Han ◽  
Ju-Hyeon Shin ◽  
Heon Lee ◽  
Donghwan Kim

2005 ◽  
Vol 128 (3) ◽  
pp. 236-245 ◽  
Author(s):  
Bivragh Majeed ◽  
Kieran Delaney ◽  
John Barton ◽  
Niall McCarthy ◽  
Sean C. O’Mathuna ◽  
...  

In this paper we describe the materials-related challenges in applying folded flex packaging technology to wireless sensor networks and propose solutions for implementing miniaturized 5mm cube platforms. The focus is to apply thin silicon stacking methods using thin flexible substrate interconnect and in particular to investigate the behavior of the selected materials. Both commercial and in-house polyimide substrates, in the thickness range 25μm down to 3μm (each with 4μm of sputtered copper) were analyzed for appropriate electrical, chemical, and mechanical properties. The characterization highlighted that in flex of thickness below 10μm, a dramatic decrease in stiffness occurs and the polyimide wrinkles due to stresses generated by the copper sputtering process. An evaluation determined that specific steps, such as polymer support ring formation, could be employed to eliminate impact of wrinkling on the process of developing the 5mm cube prototypes.


2013 ◽  
Vol 3 (6) ◽  
pp. 702-708 ◽  
Author(s):  
Kebin Fan ◽  
Xiaoguang Zhao ◽  
Jingdi Zhang ◽  
Kun Geng ◽  
George R. Keiser ◽  
...  

2007 ◽  
Vol 7 (11) ◽  
pp. 4150-4153
Author(s):  
ChangMin Park ◽  
SeHan Lee ◽  
MinSu Choi ◽  
MyungGil Kang ◽  
YoungChai Jung ◽  
...  

We report the fabrication and characterization of poly-Si nanowire transistors on flexible substrates. The nanowire transistors are fabricated on a SiO2/Si substrate using conventional CMOS processes, and then they are transferred onto polyimide substrates. The transfer process is performed by spin-coating of polyimide, curing (annealing) of the polyimide layer, and removal of the SiO2 sacrificial layer. The optimized curing condition results in the maximum bending of 150° with full recovery. The nanowire transistors exhibit transistor characteristics as a function of the backgate bias. Our new process can be applied to the fabrication of Si-nanowire transistors with larger mobilities.


RSC Advances ◽  
2016 ◽  
Vol 6 (85) ◽  
pp. 81965-81968
Author(s):  
Qi Yu ◽  
Taotao Ai ◽  
Liyun Jiang

B doped ZnO nanospheres have been fabricated on PET-ITO flexible substrates by hydrothermal technique.


Author(s):  
Pei-Ju Lin ◽  
Hung-Ming Chang ◽  
Ching-Chien Yuan ◽  
Yu-Jung Huang ◽  
Lih-Shan Chen ◽  
...  

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