Fabrication and characterization of all-polymer, transparent ferroelectric capacitors on flexible substrates

2011 ◽  
Vol 12 (12) ◽  
pp. 2225-2229 ◽  
Author(s):  
M.A. Khan ◽  
Unnat S. Bhansali ◽  
H.N. Alshareef
Keyword(s):  
Flexible Substrates ◽  
Fabrication And Characterization ◽  
Ferroelectric Capacitors

Fabrication and characterization of CdTe nano pattern on flexible substrates by nano imprinting and electrodeposition

2010 ◽  
Vol 87 (11) ◽  
pp. 2097-2102 ◽  
Author(s):  
Seungju Chun ◽  
Kang-Soo Han ◽  
Ju-Hyeon Shin ◽  
Heon Lee ◽  
Donghwan Kim
Keyword(s):  
Flexible Substrates ◽  
Fabrication And Characterization

Fabrication and Characterization of Flexible Substrates for Use in the Development of Miniaturized Wireless Sensor Network Modules

2005 ◽  
Vol 128 (3) ◽  
pp. 236-245 ◽  
Author(s):  
Bivragh Majeed ◽  
Kieran Delaney ◽  
John Barton ◽  
Niall McCarthy ◽  
Sean C. O’Mathuna ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Flexible Substrate ◽  
Wireless Sensor ◽  
Polymer Support ◽  
Flexible Substrates ◽  
Dramatic Decrease ◽  
Support Ring ◽  
Network Modules ◽  
Fabrication And Characterization

In this paper we describe the materials-related challenges in applying folded flex packaging technology to wireless sensor networks and propose solutions for implementing miniaturized 5mm cube platforms. The focus is to apply thin silicon stacking methods using thin flexible substrate interconnect and in particular to investigate the behavior of the selected materials. Both commercial and in-house polyimide substrates, in the thickness range 25μm down to 3μm (each with 4μm of sputtered copper) were analyzed for appropriate electrical, chemical, and mechanical properties. The characterization highlighted that in flex of thickness below 10μm, a dramatic decrease in stiffness occurs and the polyimide wrinkles due to stresses generated by the copper sputtering process. An evaluation determined that specific steps, such as polymer support ring formation, could be employed to eliminate impact of wrinkling on the process of developing the 5mm cube prototypes.

Fabrication of Poly-Silicon Nano-Wire Transistors on Plastic Substrates

2007 ◽  
Vol 7 (11) ◽  
pp. 4150-4153
Author(s):  
ChangMin Park ◽  
SeHan Lee ◽  
MinSu Choi ◽  
MyungGil Kang ◽  
YoungChai Jung ◽  
...  
Keyword(s):  
Sacrificial Layer ◽  
Flexible Substrates ◽  
Si Substrate ◽  
Plastic Substrates ◽  
Si Nanowire ◽  
Nanowire Transistors ◽  
New Process ◽  
Curing Condition ◽  
Fabrication And Characterization

We report the fabrication and characterization of poly-Si nanowire transistors on flexible substrates. The nanowire transistors are fabricated on a SiO2/Si substrate using conventional CMOS processes, and then they are transferred onto polyimide substrates. The transfer process is performed by spin-coating of polyimide, curing (annealing) of the polyimide layer, and removal of the SiO2 sacrificial layer. The optimized curing condition results in the maximum bending of 150° with full recovery. The nanowire transistors exhibit transistor characteristics as a function of the backgate bias. Our new process can be applied to the fabrication of Si-nanowire transistors with larger mobilities.

Fabrication and characterization of B-doped ZnO nanospheres synthesized on PET/ITO flexible substrates

RSC Advances ◽  
2016 ◽  
Vol 6 (85) ◽  
pp. 81965-81968
Author(s):  
Qi Yu ◽  
Taotao Ai ◽  
Liyun Jiang
Keyword(s):  
Flexible Substrates ◽  
Hydrothermal Technique ◽  
Doped Zno ◽  
Fabrication And Characterization

B doped ZnO nanospheres have been fabricated on PET-ITO flexible substrates by hydrothermal technique.

Fabrication and characterization of passive devices on flexible substrates

2008 ◽  
Author(s):  
Pei-Ju Lin ◽  
Hung-Ming Chang ◽  
Ching-Chien Yuan ◽  
Yu-Jung Huang ◽  
Lih-Shan Chen ◽  
...  
Keyword(s):  
Flexible Substrates ◽  
Passive Devices ◽  
Fabrication And Characterization

Fabrication of Poly-Silicon Nano-Wire Transistors on Plastic Substrates

2007 ◽  
Vol 7 (11) ◽  
pp. 4150-4153 ◽  
Author(s):  
ChangMin Park ◽  
SeHan Lee ◽  
MinSu Choi ◽  
MyungGil Kang ◽  
YoungChai Jung ◽  
...  
Keyword(s):  
Sacrificial Layer ◽  
Flexible Substrates ◽  
Si Substrate ◽  
Plastic Substrates ◽  
Si Nanowire ◽  
Nanowire Transistors ◽  
New Process ◽  
Curing Condition ◽  
Fabrication And Characterization

We report the fabrication and characterization of poly-Si nanowire transistors on flexible substrates. The nanowire transistors are fabricated on a SiO2/Si substrate using conventional CMOS processes, and then they are transferred onto polyimide substrates. The transfer process is performed by spin-coating of polyimide, curing (annealing) of the polyimide layer, and removal of the SiO2 sacrificial layer. The optimized curing condition results in the maximum bending of 150° with full recovery. The nanowire transistors exhibit transistor characteristics as a function of the backgate bias. Our new process can be applied to the fabrication of Si-nanowire transistors with larger mobilities.

Fabrication and Characterization of Polyoxometalate based Nano-hybrids: Evaluation of their role in Biological Activity

2019 ◽  
Vol 35 (4) ◽  
pp. 475-484
Author(s):  
SHIVA ARUN ◽  
◽  
PRABHA BHARTIYA ◽  
AMREEN NAZ ◽  
SUDHEER RAI ◽  
...  
Keyword(s):  
Biological Activity ◽  
Fabrication And Characterization
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