scholarly journals Oxidized Silicon-On-Insulator (OxSOI) from bulk silicon: a new photonic platform

2010 ◽  
Vol 18 (6) ◽  
pp. 5785 ◽  
Author(s):  
Nicolás Sherwood-Droz ◽  
Alexander Gondarenko ◽  
Michal Lipson
Keyword(s):  
Silicon On Insulator ◽  
Bulk Silicon

Cointegration of Gate-All-Around MOSFETs and Local Silicon-on-Insulator Optical Waveguides on Bulk Silicon

2007 ◽  
Vol 6 (1) ◽  
pp. 118-125 ◽  
Author(s):  
K.E. Moselund ◽  
D. Bouvet ◽  
L. Tschuor ◽  
V. Pott ◽  
P. Dainesi ◽  
...  
Keyword(s):  
Optical Waveguides ◽  
Silicon On Insulator ◽  
Bulk Silicon

Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator

2006 ◽  
Vol 912 ◽  
Author(s):  
Justin J Hamilton ◽  
Erik JH Collart ◽  
Benjamin Colombeau ◽  
Massimo Bersani ◽  
Damiano Giubertoni ◽  
...  
Keyword(s):  
Structural Properties ◽  
Solid Phase ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
Bulk Silicon ◽  
Defect Band ◽  
Future Technology ◽  
Ultrashallow Junctions ◽  
P Type ◽  
Technology Nodes

AbstractFormation of highly activated, ultra-shallow and abrupt profiles is a key requirement for the next generations of CMOS devices, particularly for source-drain extensions. For p-type dopant implants (boron), a promising method of increasing junction abruptness is to use Ge preamorphizing implants prior to ultra-low energy B implantation and solid-phase epitaxy regrowth to re-crystallize the amorphous Si. However, for future technology nodes, new issues arise when bulk silicon is supplanted by silicon-on-insulator (SOI). Previous results have shown that the buried Si/SiO2 interface can improve dopant activation, but the effect depends on the detailed preamorphization conditions and further optimization is required. In this paper a range of B doses and Ge energies have been chosen in order to situate the end-of-range (EOR) defect band at various distances from the back interface of the active silicon film (the interface with the buried oxide), in order to explore and optimize further the effect of the interface on dopant behavior. Electrical and structural properties were measured by Hall Effect and SIMS techniques. The results show that the boron deactivates less in SOI material than in bulk silicon, and crucially, that the effect increases as the distance from the EOR defect band to the back interface is decreased. For the closest distances, an increase in junction steepness is also observed, even though the B is located close to the top surface, and thus far from the back interface. The position of the EOR defect band shows the strongest influence for lower B doses.

Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator

2003 ◽  
Vol 42 (Part 1, No. 4A) ◽  
pp. 1503-1510 ◽  
Author(s):  
Eisuke Arai ◽  
Daisuke Iida ◽  
Hiroshi Asai ◽  
Yasushi Ieki ◽  
Hideo Uchida ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Boron Diffusion ◽  
Bulk Silicon ◽  
Diffusion Parameters

Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material

1991 ◽  
Vol 6 (4) ◽  
pp. 792-795 ◽  
Author(s):  
Supapan Visitserngtrakul ◽  
Stephen J. Krause ◽  
John C. Barry
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Oxide Layer ◽  
High Resolution Electron Microscopy ◽  
Silicon On Insulator ◽  
High Dose ◽  
Diamond Structure ◽  
Bulk Silicon ◽  
Coherent Interface ◽  
Resolution Electron

Conventional and high resolution electron microscopy (HREM) were used to study the structure of {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm−2 below the buried oxide layer in the substrate region. The HREM images of the {113} defects are similar to the ribbon-like defects in bulk silicon. It is proposed that there is a third possible structure of the defects, in addition to coesite and/or hexagonal structures. Portions of some defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five- and seven-membered rings and no dangling bonds.

Twinning Structure of {113} Defects in High-Dose Oxygen Implanted Silicon-on-Insulator Material.

1989 ◽  
Vol 163 ◽  
Author(s):  
S. Visitserngtrakul ◽  
J. Barry ◽  
S. Krause
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Oxide Layer ◽  
High Resolution Electron Microscopy ◽  
Silicon On Insulator ◽  
High Dose ◽  
Diamond Structure ◽  
Bulk Silicon ◽  
Coherent Interface ◽  
Resolution Electron

AbstractConventional and high resolution electron microscopy (HREM) were used to study the structure of the {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm-2 below the buried oxide layer in the substrate region. The {113} defects are similar to the ribbon-like defects in bulk silicon. Our HREM observations show that two crystalline phases are present in the defect. Portions of the defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five- and seven-membered rings and no dangling bonds.

Nucleation & Growth of Defects in SOI Materials

1995 ◽  
Vol 378 ◽  
Author(s):  
G. C. M. Silvestre ◽  
R. A. Moore ◽  
B. J. Kennedy
Keyword(s):  
Stacking Faults ◽  
Silicon On Insulator ◽  
Device Performance ◽  
Low Doses ◽  
Bulk Silicon ◽  
Counting System ◽  
Partial Dislocations ◽  
Nucleation Sites ◽  
Oxygen Precipitates ◽  
Interface Effects

AbstractTo produce Silicon-On-Insulator (SOI) materials with thin Si overlayer, sacrificial oxidation is often used. This creates defects which have adverse effects on device performance. It has been observed that Stacking Faults (SFs) in thin Separation-by-IMplantation-of-OXygen (SIMOX) or Bonded-and-Etched-back-SOI (BESOI) films of less than 600 Å, do not shrink as expected during neutral Ar anneals. Shrinkage of SFs in standard bulk substrates with different capping layers has been investigated to promote the understanding of the Si/Si02 interface effects on Si interstitial incorporation during anneals. The activation energy for growth and shrinkage of SOI samples thicker than 800 A was found to be the same as bulk Si: 2.3 eV (growth) and 4.6 eV (shrinkage). Bulk silicon implanted with low doses of oxygen, permitted investigation of the nucleation sites of SFs in SIMOX where oxygen precipitates are believed to act as nuclei for SFs. A five step etch procedure was modified to reveal the defects in very thin SOI and an automatic defect counting system developed at T.C.D. permitted fast and reliable measurements of size and density of the defects. It appears that the two Frank partial dislocations that bound SFs, are pinned at the two Si/Si02 interfaces for both SIMOX and BESOI films thinner than 500 Å. In thicker SOI, the mechanisms for growth and shrinkage of SFs are the same as for bulk silicon.

Comparison of the AlxGa1–xN/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates

2016 ◽  
Vol 63 (1) ◽  
pp. 345-352 ◽  
Author(s):  
Wai Hoe Tham ◽  
Diing Shenp Ang ◽  
Lakshmi Kanta Bera ◽  
Surani Bin Dolmanan ◽  
Thirumaleshwara N Bhat ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Silicon Substrates ◽  
Bulk Silicon
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