Nucleation & Growth of Defects in SOI Materials

MRS Proceedings ◽

10.1557/proc-378-121 ◽

1995 ◽

Vol 378 ◽

Author(s):

G. C. M. Silvestre ◽

R. A. Moore ◽

B. J. Kennedy

Keyword(s):

Stacking Faults ◽

Silicon On Insulator ◽

Device Performance ◽

Low Doses ◽

Bulk Silicon ◽

Counting System ◽

Partial Dislocations ◽

Nucleation Sites ◽

Oxygen Precipitates ◽

Interface Effects

AbstractTo produce Silicon-On-Insulator (SOI) materials with thin Si overlayer, sacrificial oxidation is often used. This creates defects which have adverse effects on device performance. It has been observed that Stacking Faults (SFs) in thin Separation-by-IMplantation-of-OXygen (SIMOX) or Bonded-and-Etched-back-SOI (BESOI) films of less than 600 Å, do not shrink as expected during neutral Ar anneals. Shrinkage of SFs in standard bulk substrates with different capping layers has been investigated to promote the understanding of the Si/Si02 interface effects on Si interstitial incorporation during anneals. The activation energy for growth and shrinkage of SOI samples thicker than 800 A was found to be the same as bulk Si: 2.3 eV (growth) and 4.6 eV (shrinkage). Bulk silicon implanted with low doses of oxygen, permitted investigation of the nucleation sites of SFs in SIMOX where oxygen precipitates are believed to act as nuclei for SFs. A five step etch procedure was modified to reveal the defects in very thin SOI and an automatic defect counting system developed at T.C.D. permitted fast and reliable measurements of size and density of the defects. It appears that the two Frank partial dislocations that bound SFs, are pinned at the two Si/Si02 interfaces for both SIMOX and BESOI films thinner than 500 Å. In thicker SOI, the mechanisms for growth and shrinkage of SFs are the same as for bulk silicon.

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Ebic Study of Fe Precipitation on Bulk Stacking Fault in Czochralski-Grown Silicon

MRS Proceedings ◽

10.1557/proc-469-523 ◽

1997 ◽

Vol 469 ◽

Author(s):

B. Shen ◽

T. Sekiguchi ◽

P. Chen ◽

K. Yang ◽

Z. Z. Chen ◽

...

Keyword(s):

Electron Beam ◽

Stacking Faults ◽

Stacking Fault ◽

Induced Current ◽

Partial Dislocations ◽

Electron Beam Induced Current ◽

Oxygen Precipitates ◽

Fe Impurities

ABSTRACTFe precipitation on bulk stacking faults in Czochralski-grown silicon are investigated by means of the electron-beam-induced-current (EBIC) technique and other techniques. It is found that Fe impurities only precipitate on Frank partial dislocations bounding stacking faults when the specimen is cooled slowly; however, they precipitate on both Frank partials and fault planes when the specimen is cooled fast. It is explained that small oxygen precipitates on fault planes, together with Frank partials, serve as the gettering centers for Fe impurities in the fast cooled specimen.

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Inverted Pyramid Defects in 4H-SiC Epilayers

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.125 ◽

2009 ◽

Vol 615-617 ◽

pp. 125-128 ◽

Cited By ~ 1

Author(s):

Amitesh Shrivastava ◽

Peter G. Muzykov ◽

Tangali S. Sudarshan

Keyword(s):

Formation Mechanism ◽

Basal Plane ◽

Stacking Faults ◽

Geometrical Model ◽

Inverted Pyramid ◽

Partial Dislocations ◽

Nucleation Sites ◽

Koh Etching

In this work we identified the nucleation sites of inverted pyramid defects in 4H-SiC epilayers using AFM and KOH etching and proposed a mechanism for its formation. Partial dislocations, bounding the stacking faults, mostly aligned along the <11-20> directions, were found at the base of the inverted pyramid defects. It is shown that the basal plane dislocations, serve as nucleation centers for stacking faults, and eventually the formation of inverted pyramid defects. A geometrical model is formulated to explain the formation mechanism of inverted pyramid defects.

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Interaction Between Dislocations and NiFe2O4 Precipitates In A NiO Matrix

MRS Proceedings ◽

10.1557/proc-230-351 ◽

1991 ◽

Vol 230 ◽

Cited By ~ 2

Author(s):

Scott R. Summerfelt ◽

C. Barry Carter

Keyword(s):

Stacking Faults ◽

Temperature Deformation ◽

Dislocation Loops ◽

Partial Dislocations ◽

Nucleation Sites ◽

Heat Treated ◽

Dislocation Interactions ◽

Different Types ◽

Preferential Nucleation ◽

Pass Through

AbstractThree different types of dislocation interactions with NiFe2O4 (spinel crystal structure) precipitates in a NiO matrix have been studied. In the first, the movement of dislocations introduced by room temperature deformation is impeded by the spinel precipitates. Glide dislocations in the NiO with ½<011> Burgers vectors and {011} glide planes cannot pass through the spinel precipitates without forming stacking faults because the perfect NiO dislocations are partial dislocations in NiFe2O4. Many dislocation loops but no stacking faults were observed in the deformed samples indicating that the gliding dislocations formed the loops when they moved past the precipitates. In the second type of interactions, cusps were formed in the spinel-NiO interface at close to the dislocation loops when the sample was heat treated; the cusps indicate preferential dissolution of the spinel. In the final interaction, the dislocations were shown to act as preferential nucleation sites when spinel was precipitated from the NiO matrix. At slow nucleation rates, NiFe2O4 precipitated only on the dislocations; when the nucleation rate was increased, precipitation occurred both on and away from the dislocations. Precipitates which form at a dislocation may contain a stacking fault extending from the partial dislocation to a cusp in the spinel-NiO interface. When this occurred, the stacking faults were observed to be faceted parallel to either {111} or {011} planes.

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Structure of stacking faults in pyrite using TEM techniques

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100122198 ◽

1992 ◽

Vol 50 (1) ◽

pp. 358-359

Author(s):

Raja Subramanian ◽

Kenneth S. Vecchio

Keyword(s):

Lattice Structure ◽

Stacking Faults ◽

Covalent Bond ◽

Group Symmetry ◽

Iron Pyrite ◽

Dislocation Glide ◽

Partial Dislocations ◽

Transmission Electron ◽

Contrast Analysis ◽

Chlorine Ions

The structure of stacking faults and partial dislocations in iron pyrite (FeS2) have been studied using transmission electron microscopy. Pyrite has the NaCl structure in which the sodium ions are replaced by iron and chlorine ions by covalently-bonded pairs of sulfur ions. These sulfur pairs are oriented along the <111> direction. This covalent bond between sulfur atoms is the strongest bond in pyrite with Pa3 space group symmetry. These sulfur pairs are believed to move as a whole during dislocation glide. The lattice structure across these stacking faults is of interest as the presence of these stacking faults has been preliminarily linked to a higher sulfur reactivity in pyrite. Conventional TEM contrast analysis and high resolution lattice imaging of the faulted area in the TEM specimen has been carried out.

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Cointegration of Gate-All-Around MOSFETs and Local Silicon-on-Insulator Optical Waveguides on Bulk Silicon

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2006.886748 ◽

2007 ◽

Vol 6 (1) ◽

pp. 118-125 ◽

Cited By ~ 8

Author(s):

K.E. Moselund ◽

D. Bouvet ◽

L. Tschuor ◽

V. Pott ◽

P. Dainesi ◽

...

Keyword(s):

Optical Waveguides ◽

Silicon On Insulator ◽

Bulk Silicon

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Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator

MRS Proceedings ◽

10.1557/proc-0912-c01-10 ◽

2006 ◽

Vol 912 ◽

Cited By ~ 1

Author(s):

Justin J Hamilton ◽

Erik JH Collart ◽

Benjamin Colombeau ◽

Massimo Bersani ◽

Damiano Giubertoni ◽

...

Keyword(s):

Structural Properties ◽

Solid Phase ◽

Silicon Film ◽

Silicon On Insulator ◽

Bulk Silicon ◽

Defect Band ◽

Future Technology ◽

Ultrashallow Junctions ◽

P Type ◽

Technology Nodes

AbstractFormation of highly activated, ultra-shallow and abrupt profiles is a key requirement for the next generations of CMOS devices, particularly for source-drain extensions. For p-type dopant implants (boron), a promising method of increasing junction abruptness is to use Ge preamorphizing implants prior to ultra-low energy B implantation and solid-phase epitaxy regrowth to re-crystallize the amorphous Si. However, for future technology nodes, new issues arise when bulk silicon is supplanted by silicon-on-insulator (SOI). Previous results have shown that the buried Si/SiO2 interface can improve dopant activation, but the effect depends on the detailed preamorphization conditions and further optimization is required. In this paper a range of B doses and Ge energies have been chosen in order to situate the end-of-range (EOR) defect band at various distances from the back interface of the active silicon film (the interface with the buried oxide), in order to explore and optimize further the effect of the interface on dopant behavior. Electrical and structural properties were measured by Hall Effect and SIMS techniques. The results show that the boron deactivates less in SOI material than in bulk silicon, and crucially, that the effect increases as the distance from the EOR defect band to the back interface is decreased. For the closest distances, an increase in junction steepness is also observed, even though the B is located close to the top surface, and thus far from the back interface. The position of the EOR defect band shows the strongest influence for lower B doses.

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Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.1503 ◽

2003 ◽

Vol 42 (Part 1, No. 4A) ◽

pp. 1503-1510 ◽

Cited By ~ 4

Author(s):

Eisuke Arai ◽

Daisuke Iida ◽

Hiroshi Asai ◽

Yasushi Ieki ◽

Hideo Uchida ◽

...

Keyword(s):

Silicon On Insulator ◽

Boron Diffusion ◽

Bulk Silicon ◽

Diffusion Parameters

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Characterization of Defect Structures in 3C-SiC Single Crystals Using Synchrotron White Beam X-ray Topography

MRS Proceedings ◽

10.1557/proc-423-545 ◽

1996 ◽

Vol 423 ◽

Cited By ~ 1

Author(s):

W. Huang ◽

M. Dudley ◽

C. Fazi

Keyword(s):

Single Crystals ◽

Stacking Faults ◽

Interference Microscopy ◽

Defect Structures ◽

Growth Sector ◽

X Ray ◽

Partial Dislocations ◽

White Beam ◽

Transmission And Reflection

AbstractDefect structures in (111) 3C-SiC single crystals, grown using the Baikov technique, have been studied using Synchrotron White Beam X-ray Topography (SWBXT). The major types of defects include complex growth sector boundary structures, double positioning twins, stacking faults on { 111 } planes, inclusions and dislocations (including growth dislocations and partial dislocations bounding stacking faults). Detailed stacking fault and double positioning twin configurations are determined using a combination of Nomarski interference microscopy, SEM and white beam x-ray topography in both transmission and reflection geometries. Possible defect generation phenomena are discussed.

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Dislocations and stacking faults in stainless steel

Proceedings of the Royal Society of London Series A - Mathematical and Physical Sciences ◽

10.1098/rspa.1957.0105 ◽

1957 ◽

Vol 240 (1223) ◽

pp. 524-538 ◽

Cited By ~ 124

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Stainless Steel ◽

Grain Boundaries ◽

Stacking Faults ◽

Stacking Fault ◽

Stacking Fault Energy ◽

Thin Sections ◽

Partial Dislocations ◽

Transmission Electron

Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.

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