Selective growth and coalescence of GaAs on Si (001) substrates using a round-hole nanopatterned SiO2 mask

Crack Formation and Selective Growth in MOVPE-GaAs on Si and its Application to OEICs

ESSDERC ’89 ◽

10.1007/978-3-642-52314-4_81 ◽

1989 ◽

pp. 397-400

Author(s):

A. Ackaert ◽

L. Buydens ◽

D. Lootens ◽

P. Van Daele ◽

P. Demeester

Keyword(s):

Crack Formation ◽

Selective Growth ◽

Gaas On Si

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Warpage of GaAs‐on‐Si wafers and its reduction by selective growth of GaAs through a silicon shadow mask by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.100138 ◽

1988 ◽

Vol 53 (3) ◽

pp. 225-227 ◽

Cited By ~ 19

Author(s):

N. Chand ◽

J. P. van der Ziel ◽

J. S. Weiner ◽

A. M. Sergent ◽

A. Y. Cho ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Selective Growth ◽

Shadow Mask ◽

Gaas On Si

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Selective growth of ZnTe on sapphire substrates using a SiO2 mask

physica status solidi (b) ◽

10.1002/pssb.201600317 ◽

2016 ◽

Vol 253 (11) ◽

pp. 2265-2269

Author(s):

Taizo Nakasu ◽

Shota Hattori ◽

Wei-Che Sun ◽

Masakazu Kobayashi

Keyword(s):

Selective Growth ◽

Sapphire Substrates ◽

Sio2 Mask

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Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.04.056 ◽

2004 ◽

Vol 268 (3-4) ◽

pp. 369-374 ◽

Cited By ~ 12

Author(s):

Y.B Zheng ◽

S.J Chua ◽

C.H.A Huan ◽

Z.L Miao

Keyword(s):

Quantum Dots ◽

Selective Growth ◽

Si Substrate ◽

Sio2 Mask

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Selective growth and associated faceting and lateral overgrowth of GaAs on a nanoscale limited area bounded by a SiO2 mask in molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.1512967 ◽

2002 ◽

Vol 92 (11) ◽

pp. 6567-6571 ◽

Cited By ~ 25

Author(s):

S. C. Lee ◽

K. J. Malloy ◽

L. R. Dawson ◽

S. R. J. Brueck

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Selective Growth ◽

Limited Area ◽

Lateral Overgrowth ◽

Sio2 Mask

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Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126494 ◽

1987 ◽

Vol 45 ◽

pp. 340-341

Author(s):

H. L. Tsai ◽

J. W. Lee

Keyword(s):

Growth Process ◽

Molecular Beam ◽

Substrate Surface ◽

Lattice Misfit ◽

Device Fabrication ◽

Silicon Substrates ◽

Defect Structures ◽

Gaas Film ◽

Substrate Quality ◽

Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

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Atomic structure of stair rod misfit dislocations at the GaAs on Si(100) interface

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100174849 ◽

1990 ◽

Vol 48 (4) ◽

pp. 342-343

Author(s):

D. Gerthsen

Keyword(s):

Lattice Constant ◽

Atomic Structure ◽

Spherical Aberration ◽

Stacking Faults ◽

Misfit Dislocations ◽

Gaas On Si ◽

Thermal Expansion Coefficients ◽

Transmission Electron ◽

Intersection Line ◽

Oriented Parallel

The prospect of technical applications has induced a lot of interest in the atomic structure of the GaAs on Si(100) interface and the defects in its vicinity which are often studied by high resolution transmission electron microscopy. The interface structure is determined by the 4.1% lattice constant mismatch between GaAs and Si, the large difference between the thermal expansion coefficients and the polar/nonpolar nature of the GaAs on Si interface. The lattice constant mismatch is compensated by misfit dislocations which are characterized by a/2<110> Burgers vectors b which are oriented parallel or inclined on {111} planes with respect to the interface. Stacking faults are also frequently observed. They are terminated by partial dislocations with b = a/6<112> on {111} planes. In this report, the atomic structure of stair rod misfit dislocations is analysed which are located at the intersection line of two stacking faults at the interface.A very thin, discontinous film of GaAs has been grown by MBE on a Si(100) substrate. Fig.1.a. shows an interface section of a 27 nm wide GaAs island along [110] containing a stair rod dislocation. The image has been taken with a JEOL 2000EX with a spherical aberration constant Cs = 1 mm, a spread of focus Δz = 10 nm and an angle of beam convergence ϑ of 2 mrad.

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