Selective growth and associated faceting and lateral overgrowth of GaAs on a nanoscale limited area bounded by a SiO2 mask in molecular beam epitaxy

2002 ◽  
Vol 92 (11) ◽  
pp. 6567-6571 ◽  
Author(s):  
S. C. Lee ◽  
K. J. Malloy ◽  
L. R. Dawson ◽  
S. R. J. Brueck
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Growth ◽  
Limited Area ◽  
Lateral Overgrowth ◽  
Sio2 Mask

Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

2011 ◽  
Vol 318 (1) ◽  
pp. 450-453 ◽  
Author(s):  
Chia-Hung Lin ◽  
Ryota Abe ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Selective Growth ◽  
Metal Organic

Nanoscale limited area growth of InAs islands on GaAs(001) by molecular beam epitaxy

2002 ◽  
Vol 91 (5) ◽  
pp. 3282-3288 ◽  
Author(s):  
S. C. Lee ◽  
A. Stintz ◽  
S. R. J. Brueck
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Limited Area ◽  
Area Growth

Selective growth of InP/GaInAs heterostructures using metalorganic molecular beam epitaxy

1991 ◽  
Author(s):  
Y. L. Wang ◽  
A. Feygenson ◽  
R. A. Hamm ◽  
D. Ritter ◽  
J. S. Weiner ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Growth ◽  
Metalorganic Molecular Beam Epitaxy

New Damage-Less Patterning Method of A GaAs Oxide Mask and Its Application to Selective Growth by Mombe

1993 ◽  
Vol 334 ◽  
Author(s):  
Seikoh Yoshida ◽  
Masahiro Sasaki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Growth ◽  
Oxide Surface ◽  
Selective Area Growth ◽  
Desorption Temperature ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic

AbstractA new damage-less patterning method of the photo-oxidized GaAs mask used for the selective-area growth of GaAs has been developed. We have found a new characteristic of the GaAs oxide: a metal Ga deposition onto the GaAs oxide surface lowers the desorption temperature of the oxide. The patterning method employed is based upon this characteristic. The GaAs oxide where 15 atomic layers (ALs) of Ga is deposited is locally removed at 540°C to form an opening area in the oxide mask. After forming this opening area, GaAs is selectively grown there by metal-organic molecular beam epitaxy (MOMBE).

Low-Temperature Selective Growth of ZnSe and ZnS on (001) GaAs Patterned with Carbonaceous Mask by Metalorganic Molecular-Beam Epitaxy

1998 ◽  
Vol 37 (Part 2, No. 3A) ◽  
pp. L272-L274 ◽  
Author(s):  
Akio Ueta ◽  
Adrian Avramescu ◽  
Katsuhiro Uesugi ◽  
Ikuo Suemune ◽  
Hideaki Machida ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Selective Growth ◽  
Metalorganic Molecular Beam Epitaxy

Selective growth of Ge on Si(100) through vias of SiO2 nanotemplate using solid source molecular beam epitaxy

2003 ◽  
Vol 83 (24) ◽  
pp. 5032-5034 ◽  
Author(s):  
Qiming Li ◽  
Sang M. Han ◽  
Steven R. J. Brueck ◽  
Stephen Hersee ◽  
Ying-Bing Jiang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Growth

Selective growth of InSb on localized area of Si(100) by molecular beam epitaxy

2011 ◽  
Vol 323 (1) ◽  
pp. 397-400 ◽  
Author(s):  
Shinsuke Hara ◽  
Tomoaki Iida ◽  
Yuichi Nishino ◽  
Akinori Uchida ◽  
Hiroyuki Horii ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Growth
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