Warpage of GaAs‐on‐Si wafers and its reduction by selective growth of GaAs through a silicon shadow mask by molecular beam epitaxy

1988 ◽  
Vol 53 (3) ◽  
pp. 225-227 ◽  
Author(s):  
N. Chand ◽  
J. P. van der Ziel ◽  
J. S. Weiner ◽  
A. M. Sergent ◽  
A. Y. Cho ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Growth ◽  
Shadow Mask ◽  
Gaas On Si

Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)

1986 ◽  
Vol 25 (Part 2, No. 4) ◽  
pp. L285-L287 ◽  
Author(s):  
Mitsuo Kawabe ◽  
Toshio Ueda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Domain ◽  
Gaas On Si

Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

2011 ◽  
Vol 318 (1) ◽  
pp. 450-453 ◽  
Author(s):  
Chia-Hung Lin ◽  
Ryota Abe ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Selective Growth ◽  
Metal Organic

Molecular beam epitaxy GaAs on Si: material and devices for optical interconnects

1991 ◽  
Author(s):  
Paul Panayotatos ◽  
Alexandros Georgakilas ◽  
Jean-Loic Mourrain ◽  
Aristos Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Optical Interconnects ◽  
Molecular Beam ◽  
Gaas On Si

Selective growth of InP/GaInAs heterostructures using metalorganic molecular beam epitaxy

1991 ◽  
Author(s):  
Y. L. Wang ◽  
A. Feygenson ◽  
R. A. Hamm ◽  
D. Ritter ◽  
J. S. Weiner ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Growth ◽  
Metalorganic Molecular Beam Epitaxy

Growth of Single Domain GaAs on Si(100) by Molecular Beam Epitaxy

1985 ◽  
Author(s):  
Seiji Nishi ◽  
Masahiro Akiyama ◽  
Katsuzo Kaminishi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Domain ◽  
Gaas On Si

New Damage-Less Patterning Method of A GaAs Oxide Mask and Its Application to Selective Growth by Mombe

1993 ◽  
Vol 334 ◽  
Author(s):  
Seikoh Yoshida ◽  
Masahiro Sasaki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Growth ◽  
Oxide Surface ◽  
Selective Area Growth ◽  
Desorption Temperature ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic

AbstractA new damage-less patterning method of the photo-oxidized GaAs mask used for the selective-area growth of GaAs has been developed. We have found a new characteristic of the GaAs oxide: a metal Ga deposition onto the GaAs oxide surface lowers the desorption temperature of the oxide. The patterning method employed is based upon this characteristic. The GaAs oxide where 15 atomic layers (ALs) of Ga is deposited is locally removed at 540°C to form an opening area in the oxide mask. After forming this opening area, GaAs is selectively grown there by metal-organic molecular beam epitaxy (MOMBE).

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