EPITAXY AND DEVICE APPLICATIONS OF GaAs ON Si

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-597-C5-604
Author(s):  
JHANG W. LEE ◽  
H. SHICHIJO ◽  
L. T. TRAN
Keyword(s):  
Gaas On Si ◽  
Device Applications

GaAs ON Si: Device Applications

1991 ◽  
pp. 1-24
Author(s):  
M. Rossum ◽  
J. Boeck ◽  
M. Potter ◽  
G. Borghs
Keyword(s):  
Gaas On Si ◽  
Device Applications

Materials Aspects of GaAs on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
Russ Fischer
Keyword(s):  
Dislocation Density ◽  
Lattice Mismatch ◽  
Strained Layer ◽  
Gaas On Si ◽  
Intermediate Layers ◽  
Device Applications ◽  
Strained Layer Superlattices

SUMMARY ABSTRACTDespite the 4.2% lattice mismatch, several laboratories have demonstrated that the quality of GaAs grown on Si is high enough for practical device applications [1–5]. At the GaAs/Si interface, a dislocation density of roughly 1012cm−2 is required to accommodate the mismatch. Therefore various techniques of dislocation filtering are necessary to provide material with acceptable dislocation counts. Among these techniques are the use of tilted substrates, strained layer superlattices, and intermediate layers.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

1987 ◽  
Vol 45 ◽  
pp. 340-341
Author(s):  
H. L. Tsai ◽  
J. W. Lee
Keyword(s):  
Growth Process ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Lattice Misfit ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Defect Structures ◽  
Gaas Film ◽  
Substrate Quality ◽  
Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

Observations on the growth of barium bismuth oxide thin films

1992 ◽  
Vol 50 (1) ◽  
pp. 76-77
Author(s):  
M G. Norton ◽  
E.S. Hellman ◽  
E.H. Hartford ◽  
C.B. Carter
Keyword(s):  
Substrate Temperature ◽  
Deposition Process ◽  
Nucleation Layer ◽  
Second Stage ◽  
Device Applications ◽  
High Transition ◽  
Substrate Temperatures ◽  
Oriented Material ◽  
Barium Bismuth ◽  
Superconductor Device

The bismuthates (for example, Ba1-xKxBiO3) represent a class of high transition temperature superconductors. The lack of anisotropy and the long coherence length of the bismuthates makes them technologically interesting for superconductor device applications. To obtain (100) oriented Ba1-xKxBiO3 films on (100) oriented MgO, a two-stage deposition process is utilized. In the first stage the films are nucleated at higher substrate temperatures, without the potassium. This process appears to facilitate the formation of the perovskite (100) orientation on (100) MgO. This nucleation layer is typically between 10 and 50 nm thick. In the second stage, the substrate temperature is reduced and the Ba1-xKxBiO3 is grown. Continued growth of (100) oriented material is possible at the lower substrate temperature.

Atomic structure of stair rod misfit dislocations at the GaAs on Si(100) interface

1990 ◽  
Vol 48 (4) ◽  
pp. 342-343
Author(s):  
D. Gerthsen
Keyword(s):  
Lattice Constant ◽  
Atomic Structure ◽  
Spherical Aberration ◽  
Stacking Faults ◽  
Misfit Dislocations ◽  
Gaas On Si ◽  
Thermal Expansion Coefficients ◽  
Transmission Electron ◽  
Intersection Line ◽  
Oriented Parallel

The prospect of technical applications has induced a lot of interest in the atomic structure of the GaAs on Si(100) interface and the defects in its vicinity which are often studied by high resolution transmission electron microscopy. The interface structure is determined by the 4.1% lattice constant mismatch between GaAs and Si, the large difference between the thermal expansion coefficients and the polar/nonpolar nature of the GaAs on Si interface. The lattice constant mismatch is compensated by misfit dislocations which are characterized by a/2<110> Burgers vectors b which are oriented parallel or inclined on {111} planes with respect to the interface. Stacking faults are also frequently observed. They are terminated by partial dislocations with b = a/6<112> on {111} planes. In this report, the atomic structure of stair rod misfit dislocations is analysed which are located at the intersection line of two stacking faults at the interface.A very thin, discontinous film of GaAs has been grown by MBE on a Si(100) substrate. Fig.1.a. shows an interface section of a 27 nm wide GaAs island along [110] containing a stair rod dislocation. The image has been taken with a JEOL 2000EX with a spherical aberration constant Cs = 1 mm, a spread of focus Δz = 10 nm and an angle of beam convergence ϑ of 2 mrad.

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