Selective growth of ZnTe on sapphire substrates using a SiO2 mask

2016 ◽  
Vol 253 (11) ◽  
pp. 2265-2269
Author(s):  
Taizo Nakasu ◽  
Shota Hattori ◽  
Wei-Che Sun ◽  
Masakazu Kobayashi
Keyword(s):  
Selective Growth ◽  
Sapphire Substrates ◽  
Sio2 Mask

Selective Growth of Poly-Diamond Thin Films Using Selective Damaging by Ultrasonic Agitation on a Variety of Substrates

1991 ◽  
Vol 226 ◽  
Author(s):  
R. Ramesham ◽  
T. Roppel ◽  
C. Ellis
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Polycrystalline Diamond ◽  
Selective Growth ◽  
Ultrasonic Agitation ◽  
Sapphire Substrates ◽  
Diamond Thin Films ◽  
Scanning Electron ◽  
Novel Processes

AbstractPolycrystalline diamond thin films have been selectively deposited on Si, SiO2, Si3 N4, Ta, Mo, alumina, and sapphire substrates using selective damaging by ultrasonic agitation. Novel processes were developed to selectively damage the polished substrates by ultrasonic agitation. Optical and scanning electron microscopy is used to study selectivity and morphology of as-grown diamond thin films.

Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations

2018 ◽  
Vol 52 (13) ◽  
pp. 1770-1774 ◽  
Author(s):  
A. N. Semenov ◽  
D. V. Nechaev ◽  
S. I. Troshkov ◽  
A. V. Nashchekin ◽  
P. N. Brunkov ◽  
...  
Keyword(s):  
Selective Growth ◽  
Sapphire Substrates

scholarly journals Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates

AIP Advances ◽  
2016 ◽  
Vol 6 (9) ◽  
pp. 095013
Author(s):  
Alexander Shkurmanov ◽  
Chris Sturm ◽  
Jörg Lenzner ◽  
Guy Feuillet ◽  
Florian Tendille ◽  
...  
Keyword(s):  
Selective Growth ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Selective growth and coalescence of GaAs on Si (001) substrates using a round-hole nanopatterned SiO2 mask

2015 ◽  
Author(s):  
Yunrui He ◽  
Jun Wang ◽  
Haiyang Hu ◽  
Qi Wang ◽  
Yongqing Huang ◽  
...  
Keyword(s):  
Selective Growth ◽  
Round Hole ◽  
Gaas On Si ◽  
Sio2 Mask

Selective growth of GaN on sapphire substrates treated with focused femtosecond laser pulses

2008 ◽  
Vol 310 (24) ◽  
pp. 5278-5281 ◽  
Author(s):  
Hisashi Matsumura ◽  
Shunro Fuke ◽  
Takayuki Tamaki ◽  
Yasuyuki Ozeki ◽  
Kazuyoshi Itoh ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Selective Growth ◽  
Sapphire Substrates

Microcalorimeters for X-Ray Spectroscopy

1988 ◽  
Vol 102 ◽  
pp. 41
Author(s):  
E. Silver ◽  
C. Hailey ◽  
S. Labov ◽  
N. Madden ◽  
D. Landis ◽  
...  
Keyword(s):  
High Resolution ◽  
High Efficiency ◽  
Thermal Response ◽  
Low Noise ◽  
High Resolution Spectroscopy ◽  
Superconducting Transition ◽  
Sapphire Substrates ◽  
Laboratory Plasmas ◽  
Adiabatic Demagnetization ◽  
Theoretical Predictions

The merits of microcalorimetry below 1°K for high resolution spectroscopy has become widely recognized on theoretical grounds. By combining the high efficiency, broadband spectral sensitivity of traditional photoelectric detectors with the high resolution capabilities characteristic of dispersive spectrometers, the microcalorimeter could potentially revolutionize spectroscopic measurements of astrophysical and laboratory plasmas. In actuality, however, the performance of prototype instruments has fallen short of theoretical predictions and practical detectors are still unavailable for use as laboratory and space-based instruments. These issues are currently being addressed by the new collaborative initiative between LLNL, LBL, U.C.I., U.C.B., and U.C.D.. Microcalorimeters of various types are being developed and tested at temperatures of 1.4, 0.3, and 0.1°K. These include monolithic devices made from NTD Germanium and composite configurations using sapphire substrates with temperature sensors fabricated from NTD Germanium, evaporative films of Germanium-Gold alloy, or material with superconducting transition edges. A new approache to low noise pulse counting electronics has been developed that allows the ultimate speed of the device to be determined solely by the detector thermal response and geometry. Our laboratory studies of the thermal and resistive properties of these and other candidate materials should enable us to characterize the pulse shape and subsequently predict the ultimate performance. We are building a compact adiabatic demagnetization refrigerator for conveniently reaching 0.1°K in the laboratory and for use in future satellite-borne missions. A description of this instrument together with results from our most recent experiments will be presented.

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