Optical activities of large-area SU8 microspirals fabricated by multibeam holographic lithography

2014 ◽  
Vol 53 (11) ◽  
pp. 2425 ◽  
Author(s):  
Xia Wang ◽  
Wensheng Gao ◽  
Jenny Hung ◽  
Wing Yim Tam
Keyword(s):  
Holographic Lithography ◽  
Large Area

Development of an autofocusing system using an electrically tunable lens in large area holographic lithography

2020 ◽  
Vol 59 (8) ◽  
pp. 2521
Author(s):  
Rui Hou ◽  
Jia Yu ◽  
Yanyan Huang ◽  
Huaheng Ke ◽  
Huiping Liu
Keyword(s):  
Holographic Lithography ◽  
Large Area ◽  
Tunable Lens

Fabrication of Photonic Crystals by Holographic Lithography Method

2007 ◽  
Vol 31 ◽  
pp. 98-100
Author(s):  
Jong Bin Yeo ◽  
Hyun Yong Lee
Keyword(s):  
Photonic Crystals ◽  
Incident Angle ◽  
Process Condition ◽  
Monomethyl Ether ◽  
Structure Design ◽  
Holographic Lithography ◽  
Large Area ◽  
Periodic Patterns ◽  
Nano Structure ◽  
Set Up

In this study, we found out the new fabrication process condition for Photonic crystals(PCs). PCs were fabricated by holographic lithography(HL), instead of commonly used electron beam lithography(EBL). HL process enable periodic large area fabrication of PCs. Also this method can easily control the pitch of periodic patterns. We set up holographic lithography system by laser and some optical components. The source of light used laser of 442 nm wavelength. Photo-resist(PR) used DMI-150 model. The viscosity of PR is diluted with propylene glycol monomethyl ether acetate(PGMEA) which is solvent for DMI-150. This experiment is holographic lithography of rotated double exposure method for PCs pattern. The method use only one beam. Result data is shown by atomic force microscope(AFM), scanning electron microscope(SEM) and 3D contour image. At the this study, we conclude conditions which we need periodic structure for PCs. It is some factor. For example, incident angle, exposure time, rotation angle, etc. And we show incident angle calculation recipe for needed size of periodic patterns. We already manufacture PCs structure design and simulation tool. Nano structure of this paper’s result is applied to designed PCs patterns.

Fabrication of large area two- and three-dimensional polymer photonic crystals using single refracting prism holographic lithography

2005 ◽  
Vol 86 (24) ◽  
pp. 241102 ◽  
Author(s):  
Lijun Wu ◽  
Yongchun Zhong ◽  
Che Ting Chan ◽  
Kam Sing Wong ◽  
Guo Ping Wang
Keyword(s):  
Photonic Crystals ◽  
Three Dimensional ◽  
Holographic Lithography ◽  
Large Area

scholarly journals Fabrication of Large Area Photonic Crystals with Periodic Defects by One-Step Holographic Lithography

2015 ◽  
Vol 19 (1) ◽  
pp. 63-68 ◽  
Author(s):  
Jie Ma ◽  
Kam Sing Wong ◽  
Shan Li ◽  
Zhe Chen ◽  
Jianying Zhou ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Holographic Lithography ◽  
Large Area ◽  
One Step

Convergent Beam Electron Diffraction

1978 ◽  
Vol 36 (3) ◽  
pp. 304-315
Author(s):  
G. Lehmpfuhl
Keyword(s):  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Crystal Surface ◽  
Diffraction Spot ◽  
Crystal Thickness ◽  
Large Area ◽  
Electron Microscopic ◽  
Additional Information ◽  
Microscopic Investigations

Introduction In electron microscopic investigations of crystalline specimens the direct observation of the electron diffraction pattern gives additional information about the specimen. The quality of this information depends on the quality of the crystals or the crystal area contributing to the diffraction pattern. By selected area diffraction in a conventional electron microscope, specimen areas as small as 1 µ in diameter can be investigated. It is well known that crystal areas of that size which must be thin enough (in the order of 1000 Å) for electron microscopic investigations are normally somewhat distorted by bending, or they are not homogeneous. Furthermore, the crystal surface is not well defined over such a large area. These are facts which cause reduction of information in the diffraction pattern. The intensity of a diffraction spot, for example, depends on the crystal thickness. If the thickness is not uniform over the investigated area, one observes an averaged intensity, so that the intensity distribution in the diffraction pattern cannot be used for an analysis unless additional information is available.

TEM Study of a Tilt Boundary in Hot-Pressed Silicon

1981 ◽  
Vol 39 ◽  
pp. 160-161
Author(s):  
C. B. Carter ◽  
J. Rose ◽  
D. G. Ast
Keyword(s):  
Electron Diffraction ◽  
Imaging Technique ◽  
Interface Structure ◽  
Large Area ◽  
Weak Beam ◽  
Lattice Fringe ◽  
Electron Diffraction Technique ◽  
Tilt Boundaries ◽  
Beam Technique ◽  
Twist Boundaries

The hot-pressing technique which has been successfully used to manufacture twist boundaries in silicon has now been used to form tilt boundaries in this material. In the present study, weak-beam imaging, lattice-fringe imaging and electron diffraction techniques have been combined to identify different features of the interface structure. The weak-beam technique gives an overall picture of the geometry of the boundary and in particular allows steps in the plane of the boundary which are normal to the dislocation lines to be identified. It also allows pockets of amorphous SiO2 remaining in the interface to be recognized. The lattice-fringe imaging technique allows the boundary plane parallel to the dislocation to be identified. Finally the electron diffraction technique allows the periodic structure of the boundary to be evaluated over a large area - this is particularly valuable when the dislocations are closely spaced - and can also provide information on the structural width of the interface.

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