Transfer patterning of large-area graphene nanomesh via holographic lithography and plasma etching

2014 ◽  
Vol 32 (6) ◽  
pp. 06FF01 ◽  
Author(s):  
Junjun Ding ◽  
Ke Du ◽  
Ishan Wathuthanthri ◽  
Chang-Hwan Choi ◽  
Frank T. Fisher ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Holographic Lithography ◽  
Large Area ◽  
Graphene Nanomesh

Structurally Controlled Large-Area 10 nm Pitch Graphene Nanomesh by Focused Helium Ion Beam Milling

2018 ◽  
Vol 10 (12) ◽  
pp. 10362-10368 ◽  
Author(s):  
Marek Edward Schmidt ◽  
Takuya Iwasaki ◽  
Manoharan Muruganathan ◽  
Mayeesha Haque ◽  
Huynh Van Ngoc ◽  
...  
Keyword(s):  
Ion Beam ◽  
Large Area ◽  
Helium Ion ◽  
Graphene Nanomesh

Large area strip edgeless detectors fabricated by plasma etching process

2007 ◽  
Author(s):  
G. Pellegrini ◽  
J. Balbuena ◽  
V. Eremin ◽  
C. Garcia ◽  
C. Lacasta ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Etching Process ◽  
Large Area ◽  
Plasma Etching Process

Large-area microwave and radiofrequency plasma etching of polymers

1988 ◽  
Vol 8 (3) ◽  
pp. 315-329 ◽  
Author(s):  
A. M. Wrobel ◽  
B. Lamontagne ◽  
M. R. Wertheimer
Keyword(s):  
Plasma Etching ◽  
Large Area

Nanopatterning of organic and inorganic materials by holographic lithography and plasma etching

2000 ◽  
Vol 53 (1-4) ◽  
pp. 391-394 ◽  
Author(s):  
P. Visconti ◽  
C. Turco ◽  
R. Rinaldi ◽  
R. Cingolani
Keyword(s):  
Plasma Etching ◽  
Inorganic Materials ◽  
Holographic Lithography

Large-area microwave plasma etching of polyimide

1987 ◽  
Vol 20 (7) ◽  
pp. 844-850 ◽  
Author(s):  
B Lamontagne ◽  
A M Wrobel ◽  
G Jalbert ◽  
M R Wertheimer
Keyword(s):  
Plasma Etching ◽  
Microwave Plasma ◽  
Large Area

Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers

2002 ◽  
Vol 46 (5) ◽  
pp. 685-688 ◽  
Author(s):  
J.W. Lee ◽  
P.G. Jung ◽  
M. Devre ◽  
R. Westermann ◽  
S.J. Pearton
Keyword(s):  
Plasma Etching ◽  
Gas Flow ◽  
Etch Depth ◽  
Large Area

Plasma Etching Conditioning of Textured Crystalline Silicon Surfaces for a-Si/c-Si Heterojunctions

1999 ◽  
Vol 557 ◽  
Author(s):  
R. De Rosa ◽  
M.L. Addonizio ◽  
E. Chiacchio ◽  
F. Roca ◽  
M. Tucci
Keyword(s):  
Plasma Etching ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Amorphous Layer ◽  
Native Oxide ◽  
Process Conditions ◽  
Native Oxide Layer ◽  
Plasma Process ◽  
Large Area ◽  
Layer Deposition

AbstractThe development of a hybrid heterojunction fabricated by growing ultrathin amorphous silicon by Plasma Enhanced Chemical Vapor Deposition using temperatures below 250°C offers the potential of obtaining high efficiency solar cells deposited on glassy substrates. The surface preparation represents one of the most critical steps. The first aim of etching is to remove the native oxide layer from the surface of the crystalline wafer, before amorphous layer deposition. The possibility of obtaining this goal with a dry procedure that reduces the exposure of the sample to the environment is not trivial.We performed several dry etching processes but the best results were obtained using an etching process involving CF4/O2 gases. We have found evidence that plasma etching acts by removing the native oxide and the damaged surface of textured silicon and by leaving an active layer on silicon surface suitable for the emitter deposition. SEM analysis has confirmed that it is possible to find plasma process conditions where no appreciable damage and changes in surface morphology are induced. Detailed investigation was performed to find compatibility and optimization of amorphous layer deposition both on flat and textured cast silicon by changing the plasma process parameters. By using this process we achieved on cast silicon for solar applications photovoltaic conversion efficiencies of 12.9% on 51 cm2 and 9.2% on 45 cm2 active areas for amorphous crystalline heterostructure devices realized on monocrystalline and polycrystalline silicon respectively. We also investigated the compatibility of the process with industrial production of large area devices.

scholarly journals CVD Growth of Large Area Smooth-edged Graphene Nanomesh by Nanosphere Lithography

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Min Wang ◽  
Lei Fu ◽  
Lin Gan ◽  
Chaohua Zhang ◽  
Mark Rümmeli ◽  
...  
Keyword(s):  
Nanosphere Lithography ◽  
Large Area ◽  
Graphene Nanomesh ◽  
Cvd Growth

scholarly journals Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Alireza Kazemi ◽  
Xiang He ◽  
Seyedhamidreza Alaie ◽  
Javad Ghasemi ◽  
Noel Mayur Dawson ◽  
...  
Keyword(s):  
Large Area ◽  
Interferometric Lithography ◽  
Graphene Nanomesh
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