Diamond synthesis by thermal-plasma CVD (chemical vapor deposition)

1992 ◽  
Vol 64 (5) ◽  
pp. 751-758 ◽  
Author(s):  
Seiichiro Matsumoto ◽  
Ikuo Hosoya ◽  
Yuji Manabe ◽  
Yukinobu Hibion
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Plasma ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Synthesis ◽  
Plasma Cvd

Metastable nanosized diamond formation from a C-H-O fluid system

2010 ◽  
Vol 25 (12) ◽  
pp. 2336-2340 ◽  
Author(s):  
S.K. Simakov
Keyword(s):  
Experimental Data ◽  
Chemical Vapor Deposition ◽  
Synthesis Gas ◽  
Vapor Deposition ◽  
Present Model ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Diamond Synthesis ◽  
Diamond Formation ◽  
Fluid System

The model of nanosized diamond particles formation at metastable P-T parameters from a C-H-O fluid system is presented. It explains the hydrothermal formation and growth of diamond and the specifics of chemical vapor deposition (CVD) diamond synthesis gas mixtures at low P-T parameters. Further, the model explains the genesis of interstellar nanodiamond formations in space and the genesis of metamorphic microdiamonds in shallow depth Earth rocks. In contrast to models where many possible reactions are considered, the present model makes the simplest possible assumptions about the key processes, and is then able to account for various tendencies seen in experimental data.

Optimisation of Microcrystaline Silicon Deposited by Expanding Thermal Plasma Chemical Vapor Deposition for Solar-Cell Application

2007 ◽  
Vol 989 ◽  
Author(s):  
Raul Jimenez Zambrano ◽  
R.A.C.M.M. van Swaaij ◽  
M.C.M. van de Sanden
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Plasma ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ir Absorption ◽  
Solar Cell Application ◽  
Ion Energy ◽  
Plasma Chemical Vapor Deposition ◽  
Absorption Measurements

AbstractThe causes for the porosity of the microcrystalline material deposited by the expanding thermal plasma (ETP) chemical vapor deposition (CVD) technique have been investigated through IR-absorption measurements. The role of impinging ions on the structure of the material is discussed in relation to the hydrogen bounding configuration (microcrystalline factor). The ion energy is controlled through external RF biasing. Correlation between biasing and reduction of porosity is presented. The influence of high deposition pressure is as well studied, related with changes in a-Si structure.

Crystallography and structural evolution of LiNbO3 and LiNb1−xTaxO3 films on sapphire prepared by high-rate thermal plasma spray chemical vapor deposition

2001 ◽  
Vol 16 (8) ◽  
pp. 2271-2279 ◽  
Author(s):  
D. V. Shtansky ◽  
S. A. Kulinich ◽  
K. Terashima ◽  
T. Yoshida ◽  
Y. Ikuhara
Keyword(s):  
Chemical Vapor Deposition ◽  
Lithium Niobate ◽  
Plasma Spray ◽  
Sapphire Substrate ◽  
Thermal Plasma ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bulk Single Crystal ◽  
Rocking Curve ◽  
Thermal Plasma Spray

The structure and the crystallography of lithium niobate and lithium niobate–tantalate thin films (0.2–1.0 μm in thickness) with the tantalum composition range of 0 ≤ x ≤ 0.5 grown on (0001) sapphire substrate by thermal plasma spray chemical vapor deposition have been studied by means of cross-sectional high-resolution transmission electron microscopy and x-ray diffraction. The tantalum composition in the films shows a minor effect on the rocking curve full width at half maximum values. The narrowest rocking curve width was obtained for the LiNb0.5Ta0.5O3 film to be as low as 0.25° θ. The films are under compressive strain along the c direction; c- and a-axis lattice parameters are correspondingly smaller and higher than those of the bulk single crystal. Under optimized growth conditions, the LiNbO3 and LiNb1−xTaxO3 films are 97% c-axis oriented. The film out-of-plane orientation changes from the [0001] to the [0112] direction by either decreasing the growth rate or increasing the substrate temperature. Particular attention has been paid to the orientation of individual grains in the partly c-axis-oriented films. The results demonstrate that their orientations are not random and specific orientation relationships are preferred for the film nucleation. The surface of as-received sapphire substrate reveals polishing defects with the well-defined surface ledges of 1–2 nm in height with smooth terraces of 25 nm in width. In the case of columnar growth, the terrace width becomes a limiting factor controlling the lateral crystallite size in the film. Finally, the film growth mechanism is discussed.

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