Crystallography and structural evolution of LiNbO3 and LiNb1−xTaxO3 films on sapphire prepared by high-rate thermal plasma spray chemical vapor deposition

2001 ◽  
Vol 16 (8) ◽  
pp. 2271-2279 ◽  
Author(s):  
D. V. Shtansky ◽  
S. A. Kulinich ◽  
K. Terashima ◽  
T. Yoshida ◽  
Y. Ikuhara

The structure and the crystallography of lithium niobate and lithium niobate–tantalate thin films (0.2–1.0 μm in thickness) with the tantalum composition range of 0 ≤ x ≤ 0.5 grown on (0001) sapphire substrate by thermal plasma spray chemical vapor deposition have been studied by means of cross-sectional high-resolution transmission electron microscopy and x-ray diffraction. The tantalum composition in the films shows a minor effect on the rocking curve full width at half maximum values. The narrowest rocking curve width was obtained for the LiNb0.5Ta0.5O3 film to be as low as 0.25° θ. The films are under compressive strain along the c direction; c- and a-axis lattice parameters are correspondingly smaller and higher than those of the bulk single crystal. Under optimized growth conditions, the LiNbO3 and LiNb1−xTaxO3 films are 97% c-axis oriented. The film out-of-plane orientation changes from the [0001] to the [0112] direction by either decreasing the growth rate or increasing the substrate temperature. Particular attention has been paid to the orientation of individual grains in the partly c-axis-oriented films. The results demonstrate that their orientations are not random and specific orientation relationships are preferred for the film nucleation. The surface of as-received sapphire substrate reveals polishing defects with the well-defined surface ledges of 1–2 nm in height with smooth terraces of 25 nm in width. In the case of columnar growth, the terrace width becomes a limiting factor controlling the lateral crystallite size in the film. Finally, the film growth mechanism is discussed.

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 5227-5232 ◽  
Author(s):  
Y. S. Shin ◽  
M. Yoshida ◽  
Y. Akiyama ◽  
N. Imaishi ◽  
S. C. Jung

2007 ◽  
Vol 989 ◽  
Author(s):  
Raul Jimenez Zambrano ◽  
R.A.C.M.M. van Swaaij ◽  
M.C.M. van de Sanden

AbstractThe causes for the porosity of the microcrystalline material deposited by the expanding thermal plasma (ETP) chemical vapor deposition (CVD) technique have been investigated through IR-absorption measurements. The role of impinging ions on the structure of the material is discussed in relation to the hydrogen bounding configuration (microcrystalline factor). The ion energy is controlled through external RF biasing. Correlation between biasing and reduction of porosity is presented. The influence of high deposition pressure is as well studied, related with changes in a-Si structure.


2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.


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