Enhanced Adhesion Strength between Silicon Substrate and Metal Film by Surface Fluorination

2017 ◽  
Vol 46 (11) ◽  
pp. 1643-1645
Author(s):  
Fumihiro Nishimura ◽  
Jae-Ho Kim ◽  
Susumu Yonezawa
2015 ◽  
Vol 0 (4) ◽  
pp. 12-12 ◽  
Author(s):  
V.I. Lukin ◽  
◽  
V.S. Rulnikov ◽  
A.N. Afanasiev-Khodikin ◽  
K.E. Kucevich ◽  
...  

2021 ◽  
Vol 21 (9) ◽  
pp. 4852-4856
Author(s):  
E Cheng ◽  
Suzhou Tang ◽  
Helin Zou ◽  
Guochao Qiao ◽  
Zhengyan Zhang

The fabrication of inexpensive nano-gaps is vitally important for the research and application of nanochannel-based devices. This study presents a low-cost and simple method for the fabrication of nano-gaps using thermal evaporation and stripping techniques. The structural morphology of metal films deposited on the convex structures of photoresist by sputtering and thermal evaporation was studied. The effect of angles of thermal evaporation on the width of nano-gaps was investigated. The characteristics of metal film deposited on the convex structures of photoresist and spaces between these convex structures after stripping were investigated, and the adhesive force between the metal film and silicon substrate was also analyzed. Finally, a metal film of Cu was deposited on the convex structures of photoresist by thermal evaporation. After stripping, nano-gaps with a width of 187 nm were fabricated. The method proposed in this paper can be employed to mass-produce two-dimensional nanochannels based devices at low cost.


1997 ◽  
Vol 505 ◽  
Author(s):  
G. Tas ◽  
J. J. Loomis ◽  
H. J. Maris ◽  
A. A. Bailes ◽  
L. E. Seiberling

ABSTRACTWe have used picosecond ultrasonics to study the effects of ion irradiation on the interfacial bonding between gold films and a silicon substrate. Acoustic vibrations are excited in the metal film when a picosecond light pulse is absorbed. The rate at which these vibrations damp out via sound transmission across the interface into the substrate gives a measure of the adhesion of the film to the substrate. The films were irradiated with 2.5 MeV helium ions with doses between 7×1014 and 8×1016 ions cm-2. The adhesion, as measured by the rate of acoustic damping, was found to be significantly improved by the ion irradiation.


1999 ◽  
Vol 13 (5) ◽  
pp. 615-627 ◽  
Author(s):  
S. Nakamura ◽  
N. Saito ◽  
S. Yoshioka ◽  
I. Nakaaki ◽  
Y. Suzaki

CLEO: 2015 ◽  
2015 ◽  
Author(s):  
K. Shiraishi ◽  
S. Higuchi ◽  
H. Kakinuma ◽  
J. Shimizu ◽  
H. Yoda ◽  
...  

2004 ◽  
Vol 126 (1) ◽  
pp. 10-17 ◽  
Author(s):  
Wenwu Zhang ◽  
Y. Lawrence Yao ◽  
I. C. Noyan

Microscale Laser Shock Peening (LSP), also known as Laser Shock Processing, is a technique that can be potentially applied to manipulate residual stress distributions in metal film structures and thus improve the fatigue performances of micro-devices made of such films. In this study, microscale LSP of copper films on single crystal silicon substrate is investigated. Before and after-process curvature measurement verifies that sizable compressive residual stress can be induced in copper thin films using microscale LSP. Improved modeling work of shock pressure is summarized and the computed shock pressure is used as loading in 3D stress/strain analysis of the layered film structure. Simulation shows that the stress/strain distribution in the metal film is close to equi-biaxial and is coupled into the silicon substrate.


1992 ◽  
Vol 259 ◽  
Author(s):  
G. Tas ◽  
R. J. Stoner ◽  
H. J. Maris ◽  
G. W. Rubloff ◽  
G. S. Oehrlein ◽  
...  

ABSTRACTWe report on experiments in which the picosecond ultrasonics technique is used to detect the existence of thin layers of CFx at the interface between a metal film (Al) and a silicon substrate. Acoustic vibrations are excited in the metal film when a picosecond light pulse is absorbed. The thickness of the CFx can be estimated from the rate at which these vibrations are damped out via transmission of sound into the silicon substrate through the CFx layer. We show that thin CFx layers can also be detected via their effect on the rate at which heat flows from the metal to the silicon.


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